JPH01139613U - - Google Patents
Info
- Publication number
- JPH01139613U JPH01139613U JP3592588U JP3592588U JPH01139613U JP H01139613 U JPH01139613 U JP H01139613U JP 3592588 U JP3592588 U JP 3592588U JP 3592588 U JP3592588 U JP 3592588U JP H01139613 U JPH01139613 U JP H01139613U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- circuit
- bias
- positive
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Amplifiers (AREA)
Description
第１図は本考案のマイクロ波増幅器のバイアス
回路の回路図、第２図は従来のマイクロ波増幅器
のバイアス回路の回路図である。
１…ＧａＡｓＭＥＳＦＥＴ、２…抵抗、３…温
度可変抵抗、Ｄ…ドレイン端子、Ｇ…ゲート端子
、Ｓ…ソース端子、Ｖｄ…ドレインバイアス電圧
、−Ｖｇ…ゲートバイアス負電圧、＋Ｖｇｇ…ゲ
ートバイアス正電圧。
FIG. 1 is a circuit diagram of a bias circuit of a microwave amplifier according to the present invention, and FIG. 2 is a circuit diagram of a bias circuit of a conventional microwave amplifier. 1...GaAsMESFET, 2...Resistor, 3...Temperature variable resistor, D...Drain terminal, G...Gate terminal, S...Source terminal, Vd...Drain bias voltage, -Vg...Gate bias negative voltage, +Vgg...Gate bias positive voltage.
Claims (1)
効果トランジスタを増幅素子として使用したマイ
クロ波増幅器のゲート側バイアス回路において、
該ゲートバイアス電源を正負の２電源で構成し、
この正負の２電源電圧を抵抗回路で分圧してゲー
トバイアス電圧を得るとともに、この分圧用の抵
抗回路を少なくとも１つ以上の温度可変抵抗で構
成したことを特徴とするマイクロ波増幅器のバイ
アス回路。 In a gate side bias circuit of a microwave amplifier using a source-grounded GaAs short gate field effect transistor as an amplifying element,
The gate bias power supply is configured with two positive and negative power supplies,
A bias circuit for a microwave amplifier, characterized in that the two positive and negative power supply voltages are divided by a resistor circuit to obtain a gate bias voltage, and the resistor circuit for dividing the voltage is constituted by at least one temperature variable resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988035925U JP2504991Y2 (en) | 1988-03-18 | 1988-03-18 | Microwave amplifier bias circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988035925U JP2504991Y2 (en) | 1988-03-18 | 1988-03-18 | Microwave amplifier bias circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01139613U true JPH01139613U (en) | 1989-09-25 |
| JP2504991Y2 JP2504991Y2 (en) | 1996-07-24 |
Family
ID=31262553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988035925U Expired - Lifetime JP2504991Y2 (en) | 1988-03-18 | 1988-03-18 | Microwave amplifier bias circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2504991Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311731A (en) * | 2007-06-12 | 2008-12-25 | Mitsubishi Electric Corp | Amplifying circuit of microwave signal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62151221U (en) * | 1986-03-18 | 1987-09-25 |
-
1988
- 1988-03-18 JP JP1988035925U patent/JP2504991Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62151221U (en) * | 1986-03-18 | 1987-09-25 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311731A (en) * | 2007-06-12 | 2008-12-25 | Mitsubishi Electric Corp | Amplifying circuit of microwave signal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2504991Y2 (en) | 1996-07-24 |