JPH0365314U - - Google Patents
Info
- Publication number
- JPH0365314U JPH0365314U JP12642389U JP12642389U JPH0365314U JP H0365314 U JPH0365314 U JP H0365314U JP 12642389 U JP12642389 U JP 12642389U JP 12642389 U JP12642389 U JP 12642389U JP H0365314 U JPH0365314 U JP H0365314U
- Authority
- JP
- Japan
- Prior art keywords
- power amplifier
- transistor power
- transistor
- supply unit
- ambient temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Amplifiers (AREA)
Description
第１図は本考案の一実施例の回路図、第２図は
トランジスタ電力増幅器の周囲温度変化に対する
飽和出力の変化を示した特性図、第３図はトラン
ジスタ電力増幅器のコレクタまたはドレイン電圧
の変化に対する飽和出力の変化を特性図、第４図
は従来のトランジスタ電力増幅装置を示した回路
図である。
１……ＲＦ入力端子、２……トランジスタ電力
増幅回路、３……ＲＦ出力端子、４……直流安定
化電圧入力端子、５……トランジスタ電力増幅器
、６……直流安定化電源ユニツト、７……出力電
圧調整回路、８……可変抵抗、９……サーミスタ
、２１……ベースまたはゲートバイアス電圧入力
、２２……トランジスタ電力増幅回路、２３……
ダイオード、２４……サーミスタ。
Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a characteristic diagram showing changes in saturation output with respect to changes in ambient temperature of a transistor power amplifier, and Fig. 3 is a change in collector or drain voltage of a transistor power amplifier. FIG. 4 is a circuit diagram showing a conventional transistor power amplification device. DESCRIPTION OF SYMBOLS 1...RF input terminal, 2...Transistor power amplifier circuit, 3...RF output terminal, 4...DC stabilized voltage input terminal, 5...Transistor power amplifier, 6...DC stabilized power supply unit, 7... ... Output voltage adjustment circuit, 8 ... Variable resistor, 9 ... Thermistor, 21 ... Base or gate bias voltage input, 22 ... Transistor power amplifier circuit, 23 ...
Diode, 24...thermistor.
Claims (1)
力増幅回路からなるトランジスタ電力増幅装置に
おいて、前記直流安定化電源ユニツトの出力電圧
を周囲温度にお応じて制御する手段を備え、トラ
ンジスタ電力増幅回路のコレクタまたはドレイン
電圧を周囲温度に応じて制御することを特徴とし
たトランジスタ電力増幅装置。 A transistor power amplifying device comprising a DC stabilized power supply unit and a power amplifier circuit using a semiconductor, comprising means for controlling the output voltage of the DC stabilized power supply unit according to ambient temperature, and a collector of the transistor power amplifier circuit or A transistor power amplification device characterized by controlling drain voltage according to ambient temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12642389U JPH0365314U (en) | 1989-10-27 | 1989-10-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12642389U JPH0365314U (en) | 1989-10-27 | 1989-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0365314U true JPH0365314U (en) | 1991-06-25 |
Family
ID=31674235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12642389U Pending JPH0365314U (en) | 1989-10-27 | 1989-10-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0365314U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012231491A (en) * | 2002-03-28 | 2012-11-22 | Qualcomm Inc | Gain control for communications device |
-
1989
- 1989-10-27 JP JP12642389U patent/JPH0365314U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012231491A (en) * | 2002-03-28 | 2012-11-22 | Qualcomm Inc | Gain control for communications device |