JPS61152111U - - Google Patents
Info
- Publication number
- JPS61152111U JPS61152111U JP3319285U JP3319285U JPS61152111U JP S61152111 U JPS61152111 U JP S61152111U JP 3319285 U JP3319285 U JP 3319285U JP 3319285 U JP3319285 U JP 3319285U JP S61152111 U JPS61152111 U JP S61152111U
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- reference voltage
- series
- constant voltage
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Continuous-Control Power Sources That Use Transistors (AREA)
Description
第１図は本考案の一実施例を示す回路図、第２
図は従来の回路例を示す回路図である。
１……直流電源、２……シリコンＭＯＳＦＥＴ
、３……ゲートバイアス電源、４……トンネル効
果を有する定電圧ダイオード、５……抵抗、６…
…負荷回路、７……直流電源、８……圧電圧ダイ
オード、９……抵抗、１０……抵抗、１１……抵
抗、１２……抵抗、１３……基準電圧設定用電源
、１４……演算増幅器、１５……負荷回路。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a circuit diagram showing an example of a conventional circuit. 1...DC power supply, 2...Silicon MOSFET
, 3... Gate bias power supply, 4... Constant voltage diode with tunnel effect, 5... Resistor, 6...
...Load circuit, 7...DC power supply, 8...Piezovoltage diode, 9...Resistor, 10...Resistor, 11...Resistor, 12...Resistor, 13...Reference voltage setting power supply, 14...Calculation Amplifier, 15...Load circuit.
Claims (1)
にシリコンＭＯＳＦＥＴを接続し、該シリコンＭ
ＯＳＦＥＴのゲート電極にゲートバイアス電圧を
印加し、これら定電圧ダイオードとシリコンＭＯ
ＳＦＥＴとの直列回路から基準電圧を取り出すこ
とを特徴とする温度係数可変形基準電圧回路。 A silicon MOSFET is connected in series with a constant voltage diode having a tunnel effect, and the silicon MOSFET is
A gate bias voltage is applied to the gate electrode of the OSFET, and these constant voltage diodes and silicon MO
A variable temperature coefficient reference voltage circuit characterized by extracting a reference voltage from a series circuit with an SFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3319285U JPS61152111U (en) | 1985-03-08 | 1985-03-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3319285U JPS61152111U (en) | 1985-03-08 | 1985-03-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61152111U true JPS61152111U (en) | 1986-09-20 |
Family
ID=30535412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3319285U Pending JPS61152111U (en) | 1985-03-08 | 1985-03-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61152111U (en) |
-
1985
- 1985-03-08 JP JP3319285U patent/JPS61152111U/ja active Pending