JPS63156111U - - Google Patents
Info
- Publication number
- JPS63156111U JPS63156111U JP3578787U JP3578787U JPS63156111U JP S63156111 U JPS63156111 U JP S63156111U JP 3578787 U JP3578787 U JP 3578787U JP 3578787 U JP3578787 U JP 3578787U JP S63156111 U JPS63156111 U JP S63156111U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- output
- power amplification
- circuit
- bias circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 6
Landscapes
- Amplifiers (AREA)
Description
第１図は本考案の実施例の回路図、第２図は従
来例を示す回路図、第３図はサーミスタの温度対
抵抗値特性を示す図、第４図はダイオードの順方
向特性を示す図、第５図は第２図の従来回路の出
力特性を示す図、第６図は本考案の実施例の出力
特性を示す図である。
主要部分の符号の説明、２……トランジスタ、
４……ベースバイアス回路、４２，２６……ダイ
オード、４３……サーミスタ。
Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a circuit diagram of a conventional example, Fig. 3 is a diagram showing temperature versus resistance characteristics of a thermistor, and Fig. 4 is a diagram showing forward characteristics of a diode. 5 is a diagram showing the output characteristics of the conventional circuit shown in FIG. 2, and FIG. 6 is a diagram showing the output characteristics of the embodiment of the present invention. Explanation of symbols of main parts, 2...transistor,
4...Base bias circuit, 42, 26...Diode, 43...Thermistor.
Claims (1)
に動作温度に応じて抵抗値が変化する素子を使用
して前記トランジスタの動作時の増幅出力の安定
化を図るように構成されたトランジスタ電力増幅
回路であつて、前記ベースバイアス回路の前記ト
ランジスタへのベース電流供給路に直列に挿入さ
れたダイオードを有し、このダイオードの温度特
性により前記トランジスタの出力立上り時におけ
るオーバ出力を抑止するようにしたことを特徴と
するトランジスタ電力増幅回路。 A transistor power amplification circuit configured to stabilize the amplified output during operation of the transistor by using an element whose resistance value changes depending on the operating temperature in a base bias circuit of the power amplification transistor, The base bias circuit has a diode inserted in series in a base current supply path to the transistor, and the temperature characteristic of the diode suppresses over-output when the output of the transistor rises. Transistor power amplifier circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3578787U JPS63156111U (en) | 1987-03-11 | 1987-03-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3578787U JPS63156111U (en) | 1987-03-11 | 1987-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63156111U true JPS63156111U (en) | 1988-10-13 |
Family
ID=30845594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3578787U Pending JPS63156111U (en) | 1987-03-11 | 1987-03-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63156111U (en) |
-
1987
- 1987-03-11 JP JP3578787U patent/JPS63156111U/ja active Pending
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