JPH01120839A - Collet for suction of compound semiconductor element - Google Patents

Abstract

PURPOSE:To obtain the suction collet of a compound semiconductor element which is able to form the compound semiconductor element having a long lifetime and high reliability, by providing at a suction part a groove part having a width that is wider than that of an active region, thereby eliminating mechanical damage towards the active region. CONSTITUTION:The suction part 3 of a suction collet 1 is equipped with a groove part 11 having a width which is wider than that of an active region 5 of a semiconductor element 4. In the case of J/up assembly system where the active region 5 is incorporated so as to be separated from a submount 7, therefore, its system can be incorporated to keep away fully from the width of active region 5. In view of the result obtained empirically, the reliability of the semiconductor element 4 is affected significantly by mechanical damage which is about 50mum apart from the active region 5 but if the width L of the groove is prepared to have a distance 100mum, a satisfactory result is obtained in the field of long-term reliability. Further, it may be as well to have the rate of the width L that approximates 100-200mum.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a collet for adsorbing compound semiconductor elements.

(Prior Art) FIG. 3(a) is a sectional view of the tip of a conventional collet for adsorbing compound semiconductor devices, and FIG. 3(b) is a cross-sectional view of the collet for adsorbing compound semiconductor devices shown in FIG. 3(a). A top view of the distal end of FIG. 4 is FIG. 3(a).

A state diagram during die bonding using the collet for attracting compound semiconductor elements shown in (b) is shown.

In these figures, 1 is a collet for adsorption, and 2 is an adsorption/adsorption collet.
3 is a flat suction part at the tip of the suction collet 1; 4 is a semiconductor element; 5 is an active region; 6 is a back electrode of the semiconductor element 4; 7 is a submount; 8 is a part of the submount 7. A solder layer is applied to both sides, and 9 is a heat dissipation block.

Next, with reference to FIG. 4, a die bonding operation of the semiconductor element 4 using the conventional suction collet 1 will be explained.

First, the submount 7 is suctioned by the suction collet 1.
It is vacuum-adsorbed through the buffing hole 2 and placed on top of the heat dissipation block 9 already positioned on the base heater (not shown). After placing, it is puffed through the suction/buffing hole 2 and the submount 7 is released from the suction collet 1. Next, the semiconductor element 4 is vacuum-adsorbed by the adsorption collet 1, placed on the placed submount 7, and then pressed from above with a certain constant load. Next, the base heater is heated, and when it reaches a certain temperature, the solder layer 8 applied to both sides of the submount 7 is melted, so that the back electrode 6 of the semiconductor element 4 and the solder FI 8 are brought into contact and bonded.
At the same time, the solder 11B also comes into contact with the heat dissipation block 9 and is bonded. Cooling is then completed, and die bonding work is completed.

In this work, as explained above, in order to maintain strong adhesive strength between the semiconductor element 4, submount 7, and heat dissipation block 9, and to satisfy the positional and angular accuracy within a certain standard, It is necessary to apply a certain constant load from above the suction collet 1 through the suction portion 3 of the collet 1.

In this case, when using the J/up assembly method in which the active region 5 of the semiconductor element 4 is located near the surface, it is unavoidable to press the top of the active region 5, and the mechanical The damage propagated to the active region 5 and deteriorated the semiconductor element 4.

In particular, III-V compound semiconductors are more susceptible to mechanical damage than St, and the semiconductor element 4 is more likely to deteriorate due to this influence.

[Problem that the invention seeks to solve]

Since the conventional compound semiconductor adsorption collet is configured as described above, the adsorption part 3 of the adsorption collet 1 always presses directly onto the active region 5 during die bonding, which improves the reliability of the device. , which was a big problem.

This invention was made to solve the above-mentioned problems, and is a compound semiconductor device adsorption device that can eliminate mechanical damage to the active region and produce compound semiconductor devices with long life and high reliability. The aim is to obtain a collet.

(Means for Solving the Problems) A collet for adsorbing a compound semiconductor device according to the present invention is provided with a groove portion having a width wider than the width of the active region of the semiconductor device in the adsorption portion.

[Effect]

In the compound semiconductor device adsorption collet of the present invention, the groove portion formed in the adsorption portion hardly impairs the adsorption pickup effect and avoids mechanical damage caused by pressing the active region from directly above.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1(a) is a sectional view of the tip of a collet for adsorbing a compound semiconductor device showing an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view of the collet for adsorbing a compound semiconductor device shown in FIG. 1(a). A top view of the tip of the collet, Figure 2 is shown in Figures 1 (a) and (b).
FIG. 3 is a state diagram during die bonding using the collet for adsorbing compound semiconductor elements shown in FIG.

In these figures, the same reference numerals as in FIGS. 3(a) and 3(b) indicate the same or corresponding parts, and 11 is formed in the adsorption part 3 and is wider than the width of the active region 5 of the semiconductor element 4. The groove L is the groove width of the groove 11.

The operation 9 of this invention will be explained using FIG. 2. The die bonding work is the same as in the conventional example, so it will be omitted here.

The suction collet 1 according to the present invention has a groove 1 in the suction part 3.
1 (for example, groove width L'q 100 μm), the active region 5 is assembled away from the submount 7.
In the case of the p-assembly method, it is possible to assemble the active region 5 (groove width L to 100 μm) while sufficiently avoiding the width of the active region 5 (number of micrometers).

It has been empirically known that mechanical damage located approximately 50 μm from the active region 5 has a large negative effect on the reliability of the semiconductor element 4, so we decided to increase the trench width to 100 μm.
We have produced a prototype and obtained satisfactory results in long-term reliability evaluation.

In addition, although the groove width was shown as 100 micrometers in the said Example, the groove width may be a value of about 100-200 micrometers.

Further, although the material of the adsorption collet 1 has not been mentioned, examples include ruby, ceramic, and super hard material.

Further, in the above embodiment, the groove portion 11 is open, but if the groove portion 11 is formed so as to be closed only at both ends, the suction pickup effect will not be reduced at all.

〔Effect of the invention〕

As explained above, in this invention, a groove portion having a width wider than the width of the active region of the semiconductor element is provided in the suction portion, so that mechanical damage due to pressing from directly above the active region can be avoided without impairing suction. This has the effect of making it possible to manufacture compound semiconductor devices with a long life.

[Brief explanation of the drawing]

FIGS. 1(a) and 1(b) are a cross-sectional view and a top view of the tip of a collet for adsorbing a compound semiconductor device showing an embodiment of the present invention, and FIG. 2 is FIG. 1(a). State diagram during die bonding using the compound semiconductor device adsorption collet shown in (b), Figures 3 (a) and (b)
) is a cross-sectional view and top view of the tip of a conventional collet for adsorbing compound semiconductor devices, and FIG. 4 is a diagram of FIGS. 3 (a) and (b).
FIG. 3 is a state diagram during die bonding using the collet for adsorbing compound semiconductor elements shown in FIG. In the figure, 1 is a suction collet, 2 is a suction/puff hole, 3 is a suction part, 4 is a semiconductor element, 5 is an active region, 6 is a back electrode, 7 is a submount, 8 is a solder layer, and 9 is a heat radiation 11 is a groove portion, and L is a groove width. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 (+1) Figure 3 (a)

Claims (1)

[Claims] A collet for adsorbing a compound semiconductor element having an adsorption part for adsorbing and pressing a semiconductor element, characterized in that the adsorption part is provided with a groove part having a width wider than the width of the active region of the semiconductor element. .