JPH01120839A - Collet for suction of compound semiconductor element - Google Patents
Collet for suction of compound semiconductor elementInfo
- Publication number
- JPH01120839A JPH01120839A JP62278527A JP27852787A JPH01120839A JP H01120839 A JPH01120839 A JP H01120839A JP 62278527 A JP62278527 A JP 62278527A JP 27852787 A JP27852787 A JP 27852787A JP H01120839 A JPH01120839 A JP H01120839A
- Authority
- JP
- Japan
- Prior art keywords
- active region
- semiconductor element
- collet
- width
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 150000001875 compounds Chemical class 0.000 title claims abstract description 22
- 238000001179 sorption measurement Methods 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
Landscapes
- Manipulator (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、化合物半導体素子吸着用コレットに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a collet for adsorbing compound semiconductor elements.
(従来の技術〕
第3図(a)は従来の化合物半導体素子吸着用コレット
の先端部の断面図、第3図(b)は、第3図(a)に示
した化合物半導体素子吸着用コレットの先端部の上面図
、第4図は、第3図(a)。(Prior Art) FIG. 3(a) is a sectional view of the tip of a conventional collet for adsorbing compound semiconductor devices, and FIG. 3(b) is a cross-sectional view of the collet for adsorbing compound semiconductor devices shown in FIG. 3(a). A top view of the distal end of FIG. 4 is FIG. 3(a).
(b)に示した化合物半導体素子吸着用コレットを使用
したダイボンディング時の状態図を示す。A state diagram during die bonding using the collet for attracting compound semiconductor elements shown in (b) is shown.
これらの図において、1は吸着用コレット、2は吸着/
パフ用穴、3は前記吸着用コレット1先端の平坦な吸着
部、4は半導体素子、5は活性領域、6は前記半導体素
子4の裏面電極、7はサブマウント、8は前記サブマウ
ント7の両面に塗布された半田層、9は放熱用ブロック
である。In these figures, 1 is a collet for adsorption, and 2 is an adsorption/adsorption collet.
3 is a flat suction part at the tip of the suction collet 1; 4 is a semiconductor element; 5 is an active region; 6 is a back electrode of the semiconductor element 4; 7 is a submount; 8 is a part of the submount 7. A solder layer is applied to both sides, and 9 is a heat dissipation block.
次に第4図を参照しながら従来の吸着用コレット1を使
用した半導体素子4のダイボンディング作業について説
明する。Next, with reference to FIG. 4, a die bonding operation of the semiconductor element 4 using the conventional suction collet 1 will be explained.
まず、吸着用コレット1によりサブマウント7を吸着/
バフ用穴2を通じて真空吸着させ、ベースヒータ(図示
せず)上に既に位置決めされた放熱用ブロック9の上に
プレースする。プレースした後、吸着/バフ用穴2を通
じてパフし、サブマウント7を吸着用コレット1より放
す。次に、吸着用コレット1で半導体素子4を真空吸着
し、プレース済みのサブマウント7上にプレースした後
、ある一定荷重で上方から押さえる。次に、ベースヒー
タが加熱され、ある温度に達するとサブマウント7の両
面に塗布された半田層8が溶融される、このため、半導
体素子4の裏面電極6と半田FI8が接触し接合され、
また、同時に放熱用ブロック9にも半田11Bが接触し
接合される。そして冷却が終了し、ダイボンディング作
業が完了する。First, the submount 7 is suctioned by the suction collet 1.
It is vacuum-adsorbed through the buffing hole 2 and placed on top of the heat dissipation block 9 already positioned on the base heater (not shown). After placing, it is puffed through the suction/buffing hole 2 and the submount 7 is released from the suction collet 1. Next, the semiconductor element 4 is vacuum-adsorbed by the adsorption collet 1, placed on the placed submount 7, and then pressed from above with a certain constant load. Next, the base heater is heated, and when it reaches a certain temperature, the solder layer 8 applied to both sides of the submount 7 is melted, so that the back electrode 6 of the semiconductor element 4 and the solder FI 8 are brought into contact and bonded.
At the same time, the solder 11B also comes into contact with the heat dissipation block 9 and is bonded. Cooling is then completed, and die bonding work is completed.
この作業においては、上記説明のように半導体素子4と
サブマウント7および放熱用ブロック9との接着強度を
強固に保持し、また、位置・角度精度をある規格内に満
足させるために、吸着用コレット1の吸着部3を通じて
吸着用コレット1の上方よりある一定荷重をかける必要
がある。In this work, as explained above, in order to maintain strong adhesive strength between the semiconductor element 4, submount 7, and heat dissipation block 9, and to satisfy the positional and angular accuracy within a certain standard, It is necessary to apply a certain constant load from above the suction collet 1 through the suction portion 3 of the collet 1.
この場合、半導体素子4の活性領域5が表面近くに位置
するようなJ / u p組立方式の際には、必ず活性
領域5の上を押さえることは避けられず、吸着用コレッ
ト1より機械的なダメージが活性領域5に伝播し半導体
素子4を劣化させていた。In this case, when using the J/up assembly method in which the active region 5 of the semiconductor element 4 is located near the surface, it is unavoidable to press the top of the active region 5, and the mechanical The damage propagated to the active region 5 and deteriorated the semiconductor element 4.
、特にIII −V族化合物半導体においては、Stに
比べると機械的なダメージが入り易く、その影響で半導
体素子4が劣化し易い。In particular, III-V compound semiconductors are more susceptible to mechanical damage than St, and the semiconductor element 4 is more likely to deteriorate due to this influence.
従来の化合物半導体吸着用コレットは、以上のように構
成されているので、ダイボンディングの際、吸着用コレ
ット1の吸着部3が、必ず活性領域5の上を直接押さえ
るため、素子の信頼性上、大きな問題点となっていた。Since the conventional compound semiconductor adsorption collet is configured as described above, the adsorption part 3 of the adsorption collet 1 always presses directly onto the active region 5 during die bonding, which improves the reliability of the device. , which was a big problem.
この発明は、上記のような問題点を解消するためになさ
れたもので、活性領域への機械的なダメージを排除でき
、長寿命・高信頼性の化合物半導体素子を製造できる化
合物半導体素子吸着用コレットを得ることを目的とする
。This invention was made to solve the above-mentioned problems, and is a compound semiconductor device adsorption device that can eliminate mechanical damage to the active region and produce compound semiconductor devices with long life and high reliability. The aim is to obtain a collet.
(問題点を解決するための手段〕
この発明に係る化合物半導体素子吸着用コレットは、吸
着部に半導体素子の活性領域の幅より広い幅の溝部を設
けたものである。(Means for Solving the Problems) A collet for adsorbing a compound semiconductor device according to the present invention is provided with a groove portion having a width wider than the width of the active region of the semiconductor device in the adsorption portion.
この発明の化合物半導体素子吸着用コレットにおいては
、吸着部に形成された溝部が吸着ピックアップ効果をほ
とんど損なうことなく、活性領域への真上からの押さえ
による機械的なダメージを回避せしめる。In the compound semiconductor device adsorption collet of the present invention, the groove portion formed in the adsorption portion hardly impairs the adsorption pickup effect and avoids mechanical damage caused by pressing the active region from directly above.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図(a)はこの発明の一実施例を示す化合物半導体
素子吸着用コレットの先端部の断面図、第1図(b)は
、第1図(a)に示した化合物半導体素子吸着用コレッ
トの先端部の上面図、第2図は、第1図(a)、(b)
に示した化合物半導体素子吸着用コレットを使用したダ
イボンディング時の状態図である。FIG. 1(a) is a sectional view of the tip of a collet for adsorbing a compound semiconductor device showing an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view of the collet for adsorbing a compound semiconductor device shown in FIG. 1(a). A top view of the tip of the collet, Figure 2 is shown in Figures 1 (a) and (b).
FIG. 3 is a state diagram during die bonding using the collet for adsorbing compound semiconductor elements shown in FIG.
これらの図において、第3図(a)、(b)と同一符号
は同一または相当部分を示し、11は前記吸着部3に形
成され、前記半導体素子4の活性領域5の幅より幅の広
い溝部、Lは溝部11の溝幅である。In these figures, the same reference numerals as in FIGS. 3(a) and 3(b) indicate the same or corresponding parts, and 11 is formed in the adsorption part 3 and is wider than the width of the active region 5 of the semiconductor element 4. The groove L is the groove width of the groove 11.
この発明の動作9作用について、第2図を用いて説明す
る。ダイボンディング作業については、従来例と同じな
ので、ここでは省略する。The operation 9 of this invention will be explained using FIG. 2. The die bonding work is the same as in the conventional example, so it will be omitted here.
この発明による吸着用コレット1は、吸着部3に溝部1
1を設けたため(例えば溝幅L′q100μm)、活性
領域5がサブマウント7より離れて組まれるJ / u
p組立方式の場合、活性領域5の幅(由数μm)を十
分に避けて(溝幅L〜100μm)活性領域5の幅)組
むことが可能である。The suction collet 1 according to the present invention has a groove 1 in the suction part 3.
1 (for example, groove width L'q 100 μm), the active region 5 is assembled away from the submount 7.
In the case of the p-assembly method, it is possible to assemble the active region 5 (groove width L to 100 μm) while sufficiently avoiding the width of the active region 5 (number of micrometers).
経験的に、活性領域5より約50μmのところに位置す
る機械的なダメージが半導体素子4の信頼性に大きく悪
影響することは分っており、今回、溝幅りを100μm
で試作し、長期信頼性評価で十分良好な結果を得ている
。It has been empirically known that mechanical damage located approximately 50 μm from the active region 5 has a large negative effect on the reliability of the semiconductor element 4, so we decided to increase the trench width to 100 μm.
We have produced a prototype and obtained satisfactory results in long-term reliability evaluation.
なお、上記実施例では、溝幅りを100μmで示したが
、溝幅りは100〜200μm程度の値であってもよい
。In addition, although the groove width was shown as 100 micrometers in the said Example, the groove width may be a value of about 100-200 micrometers.
また、吸着用コレット1の材質は触れなかったが、ルビ
ー、セラミック、超硬材等があげられる。Further, although the material of the adsorption collet 1 has not been mentioned, examples include ruby, ceramic, and super hard material.
さらに、上記実施例では、溝部11が開放となりでいる
が、両端部分のみで溝部11を閉じるように形成すれば
、吸着ピックアップ効果を全く減少させることがない。Further, in the above embodiment, the groove portion 11 is open, but if the groove portion 11 is formed so as to be closed only at both ends, the suction pickup effect will not be reduced at all.
この発明は以上説明したとおり、吸着部に半導体素子の
活性領域の幅より広い幅の溝部を設けたので、吸着を損
なうことなく、活性領域の真上からの押さえによる機械
的なダメージを避けることができ、長寿命の化合物半導
体素子を製造することができる効果がある。As explained above, in this invention, a groove portion having a width wider than the width of the active region of the semiconductor element is provided in the suction portion, so that mechanical damage due to pressing from directly above the active region can be avoided without impairing suction. This has the effect of making it possible to manufacture compound semiconductor devices with a long life.
第1図(a)、(b)はこの発明の一実施例を示す化合
物半導体素子吸着用コレットの先端部の断面図および上
面図、第2図は、第1図(a)。
(b)に示した化合物半導体素子吸着用コレットを使用
したダイボンディング時の状態図、第3図(a)、(b
)は従来の化合物半導体素子吸着用コレットの先端部の
断面図および上面図、第4図は、第3図(a)、(b)
に示した化合物半導体素子吸着用コレットを使用したダ
イボンディング時の状態図である。
図において、1は吸着用コレット、2は吸着/パフ用穴
、3は吸着部、4は半導体素子、5は活性領域、6は裏
面電極、7はサブマウント、8は半田層、9は放熱用ブ
ロック、11は溝部、Lは溝幅である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第1図
(+1)
第3図
(a)FIGS. 1(a) and 1(b) are a cross-sectional view and a top view of the tip of a collet for adsorbing a compound semiconductor device showing an embodiment of the present invention, and FIG. 2 is FIG. 1(a). State diagram during die bonding using the compound semiconductor device adsorption collet shown in (b), Figures 3 (a) and (b)
) is a cross-sectional view and top view of the tip of a conventional collet for adsorbing compound semiconductor devices, and FIG. 4 is a diagram of FIGS. 3 (a) and (b).
FIG. 3 is a state diagram during die bonding using the collet for adsorbing compound semiconductor elements shown in FIG. In the figure, 1 is a suction collet, 2 is a suction/puff hole, 3 is a suction part, 4 is a semiconductor element, 5 is an active region, 6 is a back electrode, 7 is a submount, 8 is a solder layer, and 9 is a heat radiation 11 is a groove portion, and L is a groove width. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 (+1) Figure 3 (a)
Claims (1)
合物半導体素子吸着用コレットにおいて、前記吸着部に
前記半導体素子の活性領域の幅より広い幅の溝部を具備
したことを特徴とする化合物半導体素子吸着用コレット
。A collet for adsorbing a compound semiconductor element having an adsorption part for adsorbing and pressing a semiconductor element, characterized in that the adsorption part is provided with a groove part having a width wider than the width of the active region of the semiconductor element. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62278527A JPH01120839A (en) | 1987-11-04 | 1987-11-04 | Collet for suction of compound semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62278527A JPH01120839A (en) | 1987-11-04 | 1987-11-04 | Collet for suction of compound semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01120839A true JPH01120839A (en) | 1989-05-12 |
Family
ID=17598517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62278527A Pending JPH01120839A (en) | 1987-11-04 | 1987-11-04 | Collet for suction of compound semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01120839A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010110602A (en) * | 2008-11-07 | 2010-05-20 | Yoshihiko Ikeda | Perforated finger pressure tool |
-
1987
- 1987-11-04 JP JP62278527A patent/JPH01120839A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010110602A (en) * | 2008-11-07 | 2010-05-20 | Yoshihiko Ikeda | Perforated finger pressure tool |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH01120839A (en) | Collet for suction of compound semiconductor element | |
JP2000049415A (en) | Nitride semiconductor laser element | |
JPS62213191A (en) | Stem for photo-semiconductor | |
JP7263792B2 (en) | Semiconductor device and its manufacturing method | |
JPH0526744Y2 (en) | ||
JPS58201388A (en) | Semiconductor device | |
JP2754884B2 (en) | Bonding apparatus and bonding method | |
JPH01309336A (en) | Semiconductor container | |
JP2997147B2 (en) | Method for manufacturing optical semiconductor device | |
JPH0276864U (en) | ||
JPS6138193Y2 (en) | ||
JPS5832423A (en) | Semiconductor device | |
JP3293757B2 (en) | Method of manufacturing lead frame assembly for manufacturing semiconductor device | |
JPH05291696A (en) | Semiconductor laser chip and manufacture thereof | |
JPH01198038A (en) | Semiconductor manufacturing apparatus | |
JP2501588Y2 (en) | Semiconductor laser equipment | |
JPH07283265A (en) | Heater device for bonding | |
JPH10163407A (en) | Lead frame for semiconductor device, and semiconductor device | |
JPH08186217A (en) | Semiconductor device | |
JPS5844961A (en) | Assembling method by brazing | |
JPH03233946A (en) | Wire bonding method | |
JPH10229160A (en) | Manufacture of semiconductor device | |
JPS61285783A (en) | Manufacture of semiconductor laser device | |
JPS5831546A (en) | Manufacture of semiconductor device | |
JPS6155778B2 (en) |