JP2501588Y2 - Semiconductor laser equipment - Google Patents
Semiconductor laser equipmentInfo
- Publication number
- JP2501588Y2 JP2501588Y2 JP3464390U JP3464390U JP2501588Y2 JP 2501588 Y2 JP2501588 Y2 JP 2501588Y2 JP 3464390 U JP3464390 U JP 3464390U JP 3464390 U JP3464390 U JP 3464390U JP 2501588 Y2 JP2501588 Y2 JP 2501588Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- submount
- pole
- laser chip
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 〔産業上の利用分野〕 この考案は民生用・産業用および通信用などの光源と
して用いられる半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a semiconductor laser device used as a light source for consumer / industrial and communication purposes.
第2図は従来の半導体レーザ装置を示す各側面図で、
図において、(1)はステム、(2)はステム(1)に
組立てられたブロツク、(4)はサブマウントII、
(5)はサブマウントII(4)上面に設けられた絶縁
溝、(6)はサブマウントII(4)上にダイボンドされ
たレーザチツプ、(7)はポール、(8)は金線ワイヤ
である。FIG. 2 is a side view showing a conventional semiconductor laser device.
In the figure, (1) is a stem, (2) is a block assembled to the stem (1), (4) is a submount II,
(5) is an insulating groove provided on the upper surface of the submount II (4), (6) is a laser chip die-bonded on the submount II (4), (7) is a pole, and (8) is a gold wire. .
次に動作について説明する。ステム(1)とポール
(7)の間に電圧を印加すると、レーザチツプ(6)か
らレーザ光が放射される。第2図(a)はポールが左側
にあるピン配列の場合であり、第2図(b),(c)は
ポールが右側にある場合を示す。Next, the operation will be described. When a voltage is applied between the stem (1) and the pole (7), laser light is emitted from the laser chip (6). 2 (a) shows the case of the pin arrangement with the pole on the left side, and FIGS. 2 (b) and 2 (c) show the case with the pole on the right side.
従来の半導体レーザ装置は以上のように構成されてい
たので、ピン配列が逆になつた場合第2図(b)の様に
金線ワイヤを遠廻しにボンデイングしなければならず、
また、第2図(c)のようにサブマウントの向きを逆に
ダイボンドしたレーザチツプを用いなければならないた
め、汎用性が悪くなるという問題点があつた。Since the conventional semiconductor laser device is configured as described above, when the pin arrangement is reversed, the gold wire has to be bonded to the circuit as shown in FIG. 2 (b).
Further, as shown in FIG. 2 (c), since a laser chip in which the submount is turned in the opposite direction must be die-bonded, the versatility is deteriorated.
この考案は上記のような問題点を解消するためになさ
れたもので、ピン配列が異なる場合でもダイボンド組立
方法が同一で、共用ができる半導体レーザ装置を得るこ
とを目的とする。The present invention has been made in order to solve the above problems, and an object thereof is to obtain a semiconductor laser device which can be shared by the same die bond assembling method even when the pin arrangement is different.
この考案に係る半導体レーザ装置は、レーザチツプを
ダイボンドするサブマウントに、レーザチツプの前端面
を除く3面を取り囲むように絶縁溝を設けたものであ
る。In the semiconductor laser device according to the present invention, a submount for die-bonding a laser chip is provided with an insulating groove so as to surround three surfaces of the laser chip excluding the front end surface.
この考案における半導体レーザ装置は、サブマウント
の絶縁溝をレーザチツプの前端面を除く3面を取り囲む
ように設けたので、ピン配列が異つた場合でもダイボン
ド組立方法を共用することができる。In the semiconductor laser device according to the present invention, the insulating groove of the submount is provided so as to surround the three surfaces except the front end surface of the laser chip, so that the die bond assembling method can be shared even when the pin arrangement is different.
以下、この考案の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図において、(1)はステム、(2)はステム
(1)に組みたてられたブロツク、(3)はサブマウン
トI、(5)はサブマウントI(3)上面に設けられた
絶縁溝、(6)はサブマウントI(3)上にダイボンド
されたレーザチツプ、(7)はポール、(8)は金線ワ
イヤである。In FIG. 1, (1) is a stem, (2) is a block assembled to the stem (1), (3) is a submount I, and (5) is provided on the upper surface of the submount I (3). Insulation grooves, (6) are laser chips die-bonded onto the submount I (3), (7) is a pole, and (8) is a gold wire.
次に動作について説明する。ステム(1)とポール
(7)の間に電圧を印加すると、レーザチツプ(6)か
らレーザ光が放射される。第1図(a)はポールが左側
にあるピン配列の場合であり、第1図(b)はポールが
右側にある場合である。Next, the operation will be described. When a voltage is applied between the stem (1) and the pole (7), laser light is emitted from the laser chip (6). FIG. 1 (a) shows the case of the pin arrangement with the pole on the left side, and FIG. 1 (b) shows the case of the pole on the right side.
以上のようにこの考案によれば、サブマウントにレー
ザ前端面を除く3面を取り囲むように絶縁溝を設けたの
で、ピン配列によらず、レーザチツプのダイボンド組立
方法を共用でき、半導体レーザ装置を安価にでき、又、
組立工程を統一できるなどの効果がある。As described above, according to this invention, since the insulating groove is provided on the submount so as to surround the three surfaces excluding the laser front end surface, the die bonding assembling method of the laser chip can be shared regardless of the pin arrangement, and the semiconductor laser device can be used. It can be made inexpensive and
This has the effect of unifying the assembly process.
第1図(a)(b)はこの発明の一実施例による半導体
レーザ装置を示す各側面図、第2図(a)〜(c)は従
来の半導体レーザ装置を示す各側面図である。 図において、(1)はステム、(2)はブロツク、
(3)はサブマウントI、(5)は絶縁溝、(6)はレ
ーザチツプ、(7)はポール、(8)は金線ワイヤを示
す。 なお、図中、同一符号は同一、又は相当部分を示す。1A and 1B are side views showing a semiconductor laser device according to an embodiment of the present invention, and FIGS. 2A to 2C are side views showing a conventional semiconductor laser device. In the figure, (1) is a stem, (2) is a block,
(3) is a submount I, (5) is an insulating groove, (6) is a laser chip, (7) is a pole, and (8) is a gold wire. In the drawings, the same reference numerals indicate the same or corresponding parts.
Claims (1)
マウントにおいて、レーザチツプの前端面を除く3面を
取り囲むように絶縁溝を設けたことを特徴とする半導体
レーザ装置。1. A semiconductor laser device comprising a submount for die-bonding a semiconductor laser chip, wherein insulating grooves are provided so as to surround three surfaces of the laser chip excluding the front end surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3464390U JP2501588Y2 (en) | 1990-03-30 | 1990-03-30 | Semiconductor laser equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3464390U JP2501588Y2 (en) | 1990-03-30 | 1990-03-30 | Semiconductor laser equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03126068U JPH03126068U (en) | 1991-12-19 |
JP2501588Y2 true JP2501588Y2 (en) | 1996-06-19 |
Family
ID=31539300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3464390U Expired - Lifetime JP2501588Y2 (en) | 1990-03-30 | 1990-03-30 | Semiconductor laser equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2501588Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5715460B2 (en) * | 2010-06-28 | 2015-05-07 | Jfe鋼板株式会社 | Mating type folded roof material |
-
1990
- 1990-03-30 JP JP3464390U patent/JP2501588Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH03126068U (en) | 1991-12-19 |
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