JPH03180054A - Resin-sealed type semiconductor device - Google Patents

Resin-sealed type semiconductor device

Info

Publication number
JPH03180054A
JPH03180054A JP89319689A JP31968989A JPH03180054A JP H03180054 A JPH03180054 A JP H03180054A JP 89319689 A JP89319689 A JP 89319689A JP 31968989 A JP31968989 A JP 31968989A JP H03180054 A JPH03180054 A JP H03180054A
Authority
JP
Japan
Prior art keywords
resin
heat
heat dissipation
sealed
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP89319689A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yamada
恭裕 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP89319689A priority Critical patent/JPH03180054A/en
Publication of JPH03180054A publication Critical patent/JPH03180054A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To make position alignment easy and correct on the occasion of matched close contact and to improve a joining strength by forming a projection on one of the joining surfaces of an exposed part of a heat-radiating block and an external radiator and by providing on the other a hole part which can be fitted on this projection. CONSTITUTION:A heat-radiating block 3 being in contact with a semiconductor chip 2 is provided in such a manner that it is sealed with a resin part 1 so that a part thereof is exposed, and a projection 7 to be joined in matched close contact to a hole part 5 of an external radiator 4 is formed on the exposed part 3a of the heat-radiating block 3. Moreover, high-heat conducting grease 6 is interposed between the heat-radiating block 3 and the external radiator 4. According to this constitution, position alignment on the occasion of matching can be executed easily and correctly and, besides, a stable radiation effect can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電気・電子機器に用いられる樹脂封止型半
導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a resin-sealed semiconductor device used in electrical and electronic equipment.

〔従来の技術〕[Conventional technology]

従来より半導体チップと共に樹脂により封止された放熱
ブロックを有する樹脂封止型半導体装置において、その
放熱効果を向上するために放熱ブロック上に、それとは
別の外部放熱器を接着剤により固定することが提案され
ている。In a resin-sealed semiconductor device that conventionally has a heat dissipation block sealed with resin together with a semiconductor chip, a separate external heat radiator is fixed onto the heat dissipation block with an adhesive in order to improve the heat dissipation effect. is proposed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら上記のような構造では、外部放熱器を放熱
ブロックに取付けて接着固定するときの位置合わせが難
しい。また、接着する面が平面であるために、外部放熱
器の接着強度が弱いという問題を有していた。However, with the above structure, it is difficult to align the external heat radiator when attaching it to the heat radiating block and fixing it with adhesive. Furthermore, since the surface to be bonded is flat, there is a problem in that the bonding strength of the external radiator is weak.

この発明の目的は、外部放熱器を放熱ブロックに取付け
て接合するときの位置合わせが容易かつ正確に行え、接
合強度が高い樹脂封止型半導体装置を提供することであ
る。An object of the present invention is to provide a resin-sealed semiconductor device that allows easy and accurate alignment when attaching and bonding an external heat sink to a heat sink block, and has high bonding strength.

〔課題を解決するための手段〕[Means to solve the problem]

この発明の樹脂封止型半導体装置は、半導体チップの放
熱用の放熱ブロックを有し、この放熱ブロックの一部を
露出させて、前記半導体チップと共に樹脂で封止し、前
記放熱ブロックの露出部に外部放熱器を接合した樹脂封
止型半導体装置において、前記放熱ブロックの露出部お
よび外部放熱器の各接合面のどちらか一方に突起部を形
成し、他方に前記突起部を嵌合可能な穴部を設けたこと
を特徴とするものである。The resin-sealed semiconductor device of the present invention has a heat dissipation block for dissipating heat from a semiconductor chip, and a part of the heat dissipation block is exposed and sealed with a resin together with the semiconductor chip, and the exposed portion of the heat dissipation block is sealed with a resin. In a resin-sealed semiconductor device in which an external heat sink is bonded to a resin-sealed semiconductor device, a protrusion is formed on either one of the exposed portion of the heat dissipation block and each joint surface of the external heat dissipation, and the protrusion can be fitted to the other. It is characterized by having a hole.

〔作用〕[Effect]

この発明の樹脂封止型半導体装置は、放熱ブロックの露
出部および外部放熱器の接合する面の一方に突起部を形
成し、他方にこの突起部に嵌合可能な穴部を設けること
により、整合密着するときの位置合わせを容易かつ正確
に行うことができ、接合強度が向上する。In the resin-sealed semiconductor device of the present invention, a protrusion is formed on one of the exposed portion of the heat dissipation block and the surface to which the external heat sink is bonded, and a hole that can fit into the protrusion is provided on the other. Positioning can be performed easily and accurately during alignment and close contact, and bonding strength is improved.

［実施例］ この発明の一実施例を第１図ないし第３図に基づいて説
明する。[Embodiment] An embodiment of the present invention will be described based on FIGS. 1 to 3.

半導体チンプ２に接した放熱ブロック３が、その一部を
露出するするように樹脂部１により封止して設けられて
いる。またこの放熱ブロック３の露出部３ａには、外部
放熱器４の穴部５と整合密着し接合する突起部７が形成
されている。さらに高熱伝導グリス６が放熱ブロック３
と外部放熱器４の間に介在されている。A heat dissipation block 3 in contact with the semiconductor chimp 2 is sealed with a resin part 1 so that a part of the heat dissipation block 3 is exposed. Further, the exposed portion 3a of the heat radiating block 3 is formed with a protrusion 7 that aligns and closely contacts the hole 5 of the external radiator 4. Furthermore, high thermal conductive grease 6 is applied to the heat dissipation block 3.
and the external heat sink 4.

このように、放熱ブロック３の露出部３ａに突起部、７
を設け、外部放熱器４に穴部５を設けることにより、整
合するときの位置合わせが容易かつ正確に行うことがで
き作業性が向上する。また、突起部７と穴部５を高熱伝
導グリス６を介して強固に接合することにより、安定し
た放熱効果を得ることができ、樹脂封止型半導体の高出
力化や信頼性の向上が可能となる。In this way, the exposed portion 3a of the heat dissipation block 3 has a protrusion, 7
By providing a hole 5 in the external heat sink 4, alignment can be easily and accurately performed, and work efficiency is improved. In addition, by firmly joining the protrusion 7 and the hole 5 via the high thermal conductivity grease 6, a stable heat dissipation effect can be obtained, making it possible to increase the output and improve the reliability of resin-sealed semiconductors. becomes.

つぎに、他の実施例を第４図ないし第６図に基づいて説
明する。Next, other embodiments will be described based on FIGS. 4 to 6.

半導体チップ２に接した放熱ブロック３′が、その一部
を露出するするように樹脂部１により封止して設けられ
ている。またこの放熱ブロック３′の露出部３ａ′には
、外部放熱器４′の突起部７′と整合密着して接合する
穴部５′が形成されている。さらに高熱伝導グリス６が
放熱ブロック３′と外部放熱器４′の間に介在されてい
る。A heat radiation block 3' in contact with the semiconductor chip 2 is sealed with a resin portion 1 so that a portion thereof is exposed. Further, a hole 5' is formed in the exposed portion 3a' of the heat radiating block 3', which is aligned and closely joined to the protrusion 7' of the external heat radiator 4'. Furthermore, a highly thermally conductive grease 6 is interposed between the heat radiation block 3' and the external heat radiator 4'.

このように、放熱ブロック３′の露出部３ａ’に穴部５
′を設け、外部放熱器４′に突起部７′を設けることに
より、整合するときの位置合わせが容易かつ正確に行う
ことができ作業性が向上する。また、突起部７′と穴部
５′を高熱伝導グリス６を介して強固に接合することに
より、安定した放熱効果を得ることができ、樹脂封止型
半導体の高出力化や信頼性の向上が可能となる。In this way, the hole 5 is formed in the exposed portion 3a' of the heat dissipation block 3'.
By providing a protrusion 7' on the external heat sink 4', alignment can be easily and accurately performed, and work efficiency is improved. In addition, by firmly joining the protrusion 7' and the hole 5' through the high thermal conductive grease 6, a stable heat dissipation effect can be obtained, resulting in higher output and improved reliability of resin-sealed semiconductors. becomes possible.

なお、突起部７．７′の形状は、円柱形、角柱形または
円錐台形、角錐台形のいずれでも良く、その寸法として
は、突起部７の外形または外接円の直径が０．１〜５．
０ｍｍ、高さが０．１〜５．０閤とすることが望ましい
。また、穴部５．５′の形状も突起部７．７′の形状と
整合密着して強固に接合できる形状であれば良い。The shape of the protrusion 7.7' may be a cylinder, a prism, a truncated cone, or a truncated pyramid, and its dimensions are such that the outer diameter of the protrusion 7 or the diameter of the circumscribed circle is 0.1 to 5.
It is desirable that the height is 0.1 to 5.0 mm. Further, the shape of the hole 5.5' may be any shape as long as it can be closely aligned with the shape of the protrusion 7.7' and can be firmly joined.

〔発明の効果〕〔Effect of the invention〕

この発明の樹脂封止型半導体装置は、放熱ブロックの露
出部および外部放熱器のどちらか一方の接合する面に突
起部を形成し、他方にこの突起部に嵌合可能な穴部を設
けることにより、整合するときの位置合わせが容易かつ
正確に行うことができ作業性が向上する。また、この突
起部と穴部を整合密着し、強固に接合することにより、
放熱ブロックと外部放熱器により安定した放熱効果を得
ることかでき、高出力化や信頼性の向上が可能となる。In the resin-sealed semiconductor device of the present invention, a protrusion is formed on the bonding surface of either the exposed portion of the heat dissipation block or the external heat sink, and a hole that can fit into the protrusion is provided on the other side. This allows alignment to be performed easily and accurately, improving work efficiency. In addition, by aligning and tightly bonding the protrusion and hole,
The heat dissipation block and external heat sink provide a stable heat dissipation effect, making it possible to increase output and improve reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の樹脂封止型半導体装置の一実施例の
外部放熱器の接合前の斜視図、第２図はその接合後の斜
視図、第３図はその断面図、第４図は他の実施例の外部
放熱器の接合前の斜視図、第５図はその接合後の斜視図
、第６図はその断面図である。 ３．３′・・・放熱ブロック、３ａ、３ａ’・・・露出
部、４，４′・・・外部放熱器、５．５′・・・穴部、
７７′・・・突起部 第 １ 図 第 図 第 図FIG. 1 is a perspective view of an embodiment of the resin-sealed semiconductor device of the present invention before bonding of an external heat sink, FIG. 2 is a perspective view of the same after bonding, FIG. 3 is a sectional view thereof, and FIG. 5 is a perspective view of an external heat sink of another embodiment before bonding, FIG. 5 is a perspective view of the same after bonding, and FIG. 6 is a sectional view thereof. 3.3'... Heat radiation block, 3a, 3a'... Exposed part, 4, 4'... External radiator, 5.5'... Hole part,
77'... Protrusion 1 Figure Figure Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体チップの放熱用の放熱ブロックを有し、この放熱
ブロックの一部を露出させて、前記半導体チップと共に
樹脂で封止し、前記放熱ブロックの露出部に外部放熱器
を接合した樹脂封止型半導体装置において、前記放熱ブ
ロックの露出部および外部放熱器の各接合面のどちらか
一方に突起部を形成し、他方に前記突起部を嵌合可能な
穴部を設けたことを特徴とする樹脂封止型半導体装置。A resin-sealed type having a heat dissipation block for heat dissipation of a semiconductor chip, a part of this heat dissipation block being exposed and sealed with resin together with the semiconductor chip, and an external heat sink being bonded to the exposed part of the heat dissipation block. In a semiconductor device, a resin characterized in that a protrusion is formed on one of the exposed portion of the heat dissipation block and each joint surface of the external heat sink, and a hole into which the protrusion can be fitted is provided on the other side. Sealed semiconductor device.
JP89319689A 1989-12-08 1989-12-08 Resin-sealed type semiconductor device Pending JPH03180054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP89319689A JPH03180054A (en) 1989-12-08 1989-12-08 Resin-sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP89319689A JPH03180054A (en) 1989-12-08 1989-12-08 Resin-sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPH03180054A true JPH03180054A (en) 1991-08-06

Family

ID=18113087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP89319689A Pending JPH03180054A (en) 1989-12-08 1989-12-08 Resin-sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPH03180054A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659200A (en) * 1991-10-23 1997-08-19 Fujitsu, Ltd. Semiconductor device having radiator structure
WO2004093187A1 (en) * 2003-04-16 2004-10-28 Fujitsu Limited Electronic component package, electronic component package assembly and printed board unit
US7242582B2 (en) * 2004-04-20 2007-07-10 Denso Corporation Semiconductor module mounting structure, a cardlike semiconductor module, and heat receiving members bonded to the cardlike semiconductor module
JP2007189146A (en) * 2006-01-16 2007-07-26 Mitsubishi Electric Corp Heat exchanger
JP2011159743A (en) * 2010-01-29 2011-08-18 Denso Corp Waterproof structure of semiconductor package
JP2011258877A (en) * 2010-06-11 2011-12-22 Otics Corp Element mounting structure
JP2017212376A (en) * 2016-05-26 2017-11-30 新光電気工業株式会社 Semiconductor device, and method of manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659200A (en) * 1991-10-23 1997-08-19 Fujitsu, Ltd. Semiconductor device having radiator structure
WO2004093187A1 (en) * 2003-04-16 2004-10-28 Fujitsu Limited Electronic component package, electronic component package assembly and printed board unit
US7477519B2 (en) 2003-04-16 2009-01-13 Fujitsu Limited Electronic component package including heat spreading member
US7242582B2 (en) * 2004-04-20 2007-07-10 Denso Corporation Semiconductor module mounting structure, a cardlike semiconductor module, and heat receiving members bonded to the cardlike semiconductor module
JP2007189146A (en) * 2006-01-16 2007-07-26 Mitsubishi Electric Corp Heat exchanger
JP4640183B2 (en) * 2006-01-16 2011-03-02 三菱電機株式会社 Heat exchanger
JP2011159743A (en) * 2010-01-29 2011-08-18 Denso Corp Waterproof structure of semiconductor package
JP2011258877A (en) * 2010-06-11 2011-12-22 Otics Corp Element mounting structure
JP2017212376A (en) * 2016-05-26 2017-11-30 新光電気工業株式会社 Semiconductor device, and method of manufacturing the same

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