JP7822266B2 - 半導体装置、半導体装置の製造方法および電力変換装置 - Google Patents

半導体装置、半導体装置の製造方法および電力変換装置

Info

Publication number
JP7822266B2
JP7822266B2 JP2022115749A JP2022115749A JP7822266B2 JP 7822266 B2 JP7822266 B2 JP 7822266B2 JP 2022115749 A JP2022115749 A JP 2022115749A JP 2022115749 A JP2022115749 A JP 2022115749A JP 7822266 B2 JP7822266 B2 JP 7822266B2
Authority
JP
Japan
Prior art keywords
heat dissipation
semiconductor device
main surface
bonding material
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022115749A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024013570A (ja
JP2024013570A5 (https=
Inventor
泰成 日野
規由 新井
武敏 鹿野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022115749A priority Critical patent/JP7822266B2/ja
Priority to US18/323,600 priority patent/US20240395678A1/en
Priority to DE102023118127.0A priority patent/DE102023118127A1/de
Priority to CN202310864292.2A priority patent/CN117438386A/zh
Publication of JP2024013570A publication Critical patent/JP2024013570A/ja
Publication of JP2024013570A5 publication Critical patent/JP2024013570A5/ja
Application granted granted Critical
Publication of JP7822266B2 publication Critical patent/JP7822266B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53875—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP2022115749A 2022-07-20 2022-07-20 半導体装置、半導体装置の製造方法および電力変換装置 Active JP7822266B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022115749A JP7822266B2 (ja) 2022-07-20 2022-07-20 半導体装置、半導体装置の製造方法および電力変換装置
US18/323,600 US20240395678A1 (en) 2022-07-20 2023-05-25 Semiconductor device, method of manufacturing semiconductor device, and power conversion device
DE102023118127.0A DE102023118127A1 (de) 2022-07-20 2023-07-10 Halbleitervorrichtung, Verfahren einer Fertigung einer Halbleitervorrichtung und Leistungskonvertierungsvorrichtung
CN202310864292.2A CN117438386A (zh) 2022-07-20 2023-07-14 半导体装置、半导体装置的制造方法及电力转换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022115749A JP7822266B2 (ja) 2022-07-20 2022-07-20 半導体装置、半導体装置の製造方法および電力変換装置

Publications (3)

Publication Number Publication Date
JP2024013570A JP2024013570A (ja) 2024-02-01
JP2024013570A5 JP2024013570A5 (https=) 2024-08-16
JP7822266B2 true JP7822266B2 (ja) 2026-03-02

Family

ID=89429378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022115749A Active JP7822266B2 (ja) 2022-07-20 2022-07-20 半導体装置、半導体装置の製造方法および電力変換装置

Country Status (4)

Country Link
US (1) US20240395678A1 (https=)
JP (1) JP7822266B2 (https=)
CN (1) CN117438386A (https=)
DE (1) DE102023118127A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI886850B (zh) * 2024-03-18 2025-06-11 矽品精密工業股份有限公司 電子封裝件及其製法
CN119764269A (zh) * 2024-12-20 2025-04-04 蔚来汽车科技(安徽)有限公司 一种半导体组件
CN119993843A (zh) * 2025-02-10 2025-05-13 中科同德微电子科技(大同)有限公司 Igbt模块及其制备方法与半导体器件

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001352023A (ja) 2000-06-08 2001-12-21 Denso Corp 冷媒冷却型両面冷却半導体装置
JP2002110893A (ja) 2000-10-04 2002-04-12 Denso Corp 半導体装置
US20090194862A1 (en) 2006-06-15 2009-08-06 Toyota Jidosha Kabushiki Kaisha Semiconductor module and method of manufacturing the same
JP2012164880A (ja) 2011-02-08 2012-08-30 Denso Corp 半導体装置及びその製造方法
JP2012186273A (ja) 2011-03-04 2012-09-27 Denso Corp 半導体装置、金属ブロック体及びその製造方法
JP2016146444A (ja) 2015-02-09 2016-08-12 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2018021322A1 (ja) 2016-07-26 2018-02-01 三菱電機株式会社 半導体装置
JP2018041871A (ja) 2016-09-08 2018-03-15 本田技研工業株式会社 半導体装置及びその製造方法
JP2019047094A (ja) 2017-09-07 2019-03-22 トヨタ自動車株式会社 半導体装置
JP2019083283A (ja) 2017-10-31 2019-05-30 三菱電機株式会社 半導体モジュール、その製造方法及び電力変換装置
JP2020161538A (ja) 2019-03-25 2020-10-01 住友ベークライト株式会社 放熱シート及び半導体モジュール
JP2021072358A (ja) 2019-10-30 2021-05-06 株式会社デンソー 半導体装置
US20210358829A1 (en) 2020-05-12 2021-11-18 Hyundai Motor Company Multi-layered spacer and double-sided cooling power module including same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5905328B2 (ja) 2012-05-11 2016-04-20 株式会社日立製作所 半導体装置
JP7172846B2 (ja) 2019-05-15 2022-11-16 株式会社デンソー 半導体装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001352023A (ja) 2000-06-08 2001-12-21 Denso Corp 冷媒冷却型両面冷却半導体装置
JP2002110893A (ja) 2000-10-04 2002-04-12 Denso Corp 半導体装置
US20090194862A1 (en) 2006-06-15 2009-08-06 Toyota Jidosha Kabushiki Kaisha Semiconductor module and method of manufacturing the same
JP2012164880A (ja) 2011-02-08 2012-08-30 Denso Corp 半導体装置及びその製造方法
JP2012186273A (ja) 2011-03-04 2012-09-27 Denso Corp 半導体装置、金属ブロック体及びその製造方法
JP2016146444A (ja) 2015-02-09 2016-08-12 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2018021322A1 (ja) 2016-07-26 2018-02-01 三菱電機株式会社 半導体装置
JP2018041871A (ja) 2016-09-08 2018-03-15 本田技研工業株式会社 半導体装置及びその製造方法
JP2019047094A (ja) 2017-09-07 2019-03-22 トヨタ自動車株式会社 半導体装置
JP2019083283A (ja) 2017-10-31 2019-05-30 三菱電機株式会社 半導体モジュール、その製造方法及び電力変換装置
JP2020161538A (ja) 2019-03-25 2020-10-01 住友ベークライト株式会社 放熱シート及び半導体モジュール
JP2021072358A (ja) 2019-10-30 2021-05-06 株式会社デンソー 半導体装置
US20210358829A1 (en) 2020-05-12 2021-11-18 Hyundai Motor Company Multi-layered spacer and double-sided cooling power module including same

Also Published As

Publication number Publication date
CN117438386A (zh) 2024-01-23
US20240395678A1 (en) 2024-11-28
JP2024013570A (ja) 2024-02-01
DE102023118127A1 (de) 2024-01-25

Similar Documents

Publication Publication Date Title
JP7822266B2 (ja) 半導体装置、半導体装置の製造方法および電力変換装置
JP6945418B2 (ja) 半導体装置および半導体装置の製造方法
JP7523419B2 (ja) 電力用半導体装置の製造方法
CN105531817B (zh) 半导体模块单元以及半导体模块
JP2006134990A (ja) 半導体装置
JP6952889B2 (ja) パワー半導体モジュール及びその製造方法並びに電力変換装置
JP2019083283A (ja) 半導体モジュール、その製造方法及び電力変換装置
JP7561677B2 (ja) 電力半導体装置、電力半導体装置の製造方法及び電力変換装置
CN113140528A (zh) 半导体装置
JP2019207897A (ja) パワーモジュール、その製造方法および電力変換装置
CN113646876B (zh) 功率半导体模块以及电力变换装置
US20240030087A1 (en) Semiconductor device, method of manufacturing semiconductor device, and power conversion device
CN114730748A (zh) 用于消耗装置的可控电功率供应的具有被封装的功率半导体的功率模块及用于生产该功率模块的方法
JP7487614B2 (ja) 半導体装置、半導体装置の製造方法及び電力変換装置
CN114284226B (zh) 半导体装置、半导体装置的制造方法及电力变换装置
WO2023136264A1 (ja) 樹脂封止型半導体装置
CN114930528A (zh) 半导体装置以及电力变换装置
KR102750289B1 (ko) 반도체 패키지 및 이의 제조방법
JP7562012B2 (ja) 半導体装置、電力変換装置、および半導体装置の製造方法
JP2023173556A (ja) 半導体モジュールの製造方法、電力変換装置の製造方法、半導体モジュール、電力変換装置
JP2023162108A (ja) 樹脂封止型半導体装置及び電力変換装置
JP2023110389A (ja) 半導体装置、電力変換装置、および、半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240807

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240807

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251007

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260120

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260217

R150 Certificate of patent or registration of utility model

Ref document number: 7822266

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150