JP7802187B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP7802187B2
JP7802187B2 JP2024545394A JP2024545394A JP7802187B2 JP 7802187 B2 JP7802187 B2 JP 7802187B2 JP 2024545394 A JP2024545394 A JP 2024545394A JP 2024545394 A JP2024545394 A JP 2024545394A JP 7802187 B2 JP7802187 B2 JP 7802187B2
Authority
JP
Japan
Prior art keywords
conductive layer
semiconductor device
insulating substrate
sealing member
side end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024545394A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024053084A1 (https=
JPWO2024053084A5 (https=
Inventor
裕児 井本
直弘 大串
誠一郎 猪ノ口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2024053084A1 publication Critical patent/JPWO2024053084A1/ja
Publication of JPWO2024053084A5 publication Critical patent/JPWO2024053084A5/ja
Application granted granted Critical
Publication of JP7802187B2 publication Critical patent/JP7802187B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2024545394A 2022-09-09 2022-09-09 半導体装置 Active JP7802187B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/033850 WO2024053084A1 (ja) 2022-09-09 2022-09-09 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024053084A1 JPWO2024053084A1 (https=) 2024-03-14
JPWO2024053084A5 JPWO2024053084A5 (https=) 2024-10-15
JP7802187B2 true JP7802187B2 (ja) 2026-01-19

Family

ID=90192474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545394A Active JP7802187B2 (ja) 2022-09-09 2022-09-09 半導体装置

Country Status (5)

Country Link
US (1) US20250329659A1 (https=)
JP (1) JP7802187B2 (https=)
CN (1) CN119768912A (https=)
DE (1) DE112022007753B4 (https=)
WO (1) WO2024053084A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064168A (ja) 2000-08-17 2002-02-28 Toshiba Eng Co Ltd 冷却装置、冷却装置の製造方法および半導体装置
JP2011029420A (ja) 2009-07-27 2011-02-10 Nichia Corp 光半導体装置及びその製造方法
JP2012182279A (ja) 2011-03-01 2012-09-20 Showa Denko Kk 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法
JP2015028998A (ja) 2013-07-30 2015-02-12 株式会社豊田自動織機 半導体装置
JP2015046416A (ja) 2013-08-27 2015-03-12 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2015070107A (ja) 2013-09-30 2015-04-13 三菱電機株式会社 半導体装置およびその製造方法
JP2017174875A (ja) 2016-03-22 2017-09-28 三菱マテリアル株式会社 回路基板及び半導体モジュール、回路基板の製造方法
JP2018067669A (ja) 2016-10-20 2018-04-26 トレックス・セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP2018129442A (ja) 2017-02-09 2018-08-16 エイブリック株式会社 半導体装置およびその製造方法
WO2022145310A1 (ja) 2020-12-29 2022-07-07 三菱電機株式会社 半導体装置の製造方法、半導体装置用基板の製造方法、半導体装置及び電力変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4334054B2 (ja) * 1999-03-26 2009-09-16 株式会社東芝 セラミックス回路基板
JP7176397B2 (ja) * 2018-12-21 2022-11-22 株式会社デンソー 半導体装置とその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064168A (ja) 2000-08-17 2002-02-28 Toshiba Eng Co Ltd 冷却装置、冷却装置の製造方法および半導体装置
JP2011029420A (ja) 2009-07-27 2011-02-10 Nichia Corp 光半導体装置及びその製造方法
JP2012182279A (ja) 2011-03-01 2012-09-20 Showa Denko Kk 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法
JP2015028998A (ja) 2013-07-30 2015-02-12 株式会社豊田自動織機 半導体装置
JP2015046416A (ja) 2013-08-27 2015-03-12 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2015070107A (ja) 2013-09-30 2015-04-13 三菱電機株式会社 半導体装置およびその製造方法
JP2017174875A (ja) 2016-03-22 2017-09-28 三菱マテリアル株式会社 回路基板及び半導体モジュール、回路基板の製造方法
JP2018067669A (ja) 2016-10-20 2018-04-26 トレックス・セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP2018129442A (ja) 2017-02-09 2018-08-16 エイブリック株式会社 半導体装置およびその製造方法
WO2022145310A1 (ja) 2020-12-29 2022-07-07 三菱電機株式会社 半導体装置の製造方法、半導体装置用基板の製造方法、半導体装置及び電力変換装置

Also Published As

Publication number Publication date
US20250329659A1 (en) 2025-10-23
JPWO2024053084A1 (https=) 2024-03-14
WO2024053084A1 (ja) 2024-03-14
DE112022007753T5 (de) 2025-06-18
DE112022007753B4 (de) 2026-01-22
CN119768912A (zh) 2025-04-04

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