JPWO2024053084A1 - - Google Patents

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Publication number
JPWO2024053084A1
JPWO2024053084A1 JP2024545394A JP2024545394A JPWO2024053084A1 JP WO2024053084 A1 JPWO2024053084 A1 JP WO2024053084A1 JP 2024545394 A JP2024545394 A JP 2024545394A JP 2024545394 A JP2024545394 A JP 2024545394A JP WO2024053084 A1 JPWO2024053084 A1 JP WO2024053084A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024545394A
Other languages
Japanese (ja)
Other versions
JP7802187B2 (ja
JPWO2024053084A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of JPWO2024053084A1 publication Critical patent/JPWO2024053084A1/ja
Publication of JPWO2024053084A5 publication Critical patent/JPWO2024053084A5/ja
Application granted granted Critical
Publication of JP7802187B2 publication Critical patent/JP7802187B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
JP2024545394A 2022-09-09 2022-09-09 半導体装置 Active JP7802187B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/033850 WO2024053084A1 (ja) 2022-09-09 2022-09-09 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024053084A1 true JPWO2024053084A1 (https=) 2024-03-14
JPWO2024053084A5 JPWO2024053084A5 (https=) 2024-10-15
JP7802187B2 JP7802187B2 (ja) 2026-01-19

Family

ID=90192474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545394A Active JP7802187B2 (ja) 2022-09-09 2022-09-09 半導体装置

Country Status (5)

Country Link
US (1) US20250329659A1 (https=)
JP (1) JP7802187B2 (https=)
CN (1) CN119768912A (https=)
DE (1) DE112022007753B4 (https=)
WO (1) WO2024053084A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064168A (ja) * 2000-08-17 2002-02-28 Toshiba Eng Co Ltd 冷却装置、冷却装置の製造方法および半導体装置
JP2011029420A (ja) * 2009-07-27 2011-02-10 Nichia Corp 光半導体装置及びその製造方法
JP2012182279A (ja) * 2011-03-01 2012-09-20 Showa Denko Kk 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法
JP2015028998A (ja) * 2013-07-30 2015-02-12 株式会社豊田自動織機 半導体装置
JP2015046416A (ja) * 2013-08-27 2015-03-12 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2015070107A (ja) * 2013-09-30 2015-04-13 三菱電機株式会社 半導体装置およびその製造方法
JP2017174875A (ja) * 2016-03-22 2017-09-28 三菱マテリアル株式会社 回路基板及び半導体モジュール、回路基板の製造方法
JP2018067669A (ja) * 2016-10-20 2018-04-26 トレックス・セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP2018129442A (ja) * 2017-02-09 2018-08-16 エイブリック株式会社 半導体装置およびその製造方法
WO2022145310A1 (ja) * 2020-12-29 2022-07-07 三菱電機株式会社 半導体装置の製造方法、半導体装置用基板の製造方法、半導体装置及び電力変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4334054B2 (ja) * 1999-03-26 2009-09-16 株式会社東芝 セラミックス回路基板
JP7176397B2 (ja) * 2018-12-21 2022-11-22 株式会社デンソー 半導体装置とその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064168A (ja) * 2000-08-17 2002-02-28 Toshiba Eng Co Ltd 冷却装置、冷却装置の製造方法および半導体装置
JP2011029420A (ja) * 2009-07-27 2011-02-10 Nichia Corp 光半導体装置及びその製造方法
JP2012182279A (ja) * 2011-03-01 2012-09-20 Showa Denko Kk 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法
JP2015028998A (ja) * 2013-07-30 2015-02-12 株式会社豊田自動織機 半導体装置
JP2015046416A (ja) * 2013-08-27 2015-03-12 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2015070107A (ja) * 2013-09-30 2015-04-13 三菱電機株式会社 半導体装置およびその製造方法
JP2017174875A (ja) * 2016-03-22 2017-09-28 三菱マテリアル株式会社 回路基板及び半導体モジュール、回路基板の製造方法
JP2018067669A (ja) * 2016-10-20 2018-04-26 トレックス・セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP2018129442A (ja) * 2017-02-09 2018-08-16 エイブリック株式会社 半導体装置およびその製造方法
WO2022145310A1 (ja) * 2020-12-29 2022-07-07 三菱電機株式会社 半導体装置の製造方法、半導体装置用基板の製造方法、半導体装置及び電力変換装置

Also Published As

Publication number Publication date
US20250329659A1 (en) 2025-10-23
JP7802187B2 (ja) 2026-01-19
WO2024053084A1 (ja) 2024-03-14
DE112022007753T5 (de) 2025-06-18
DE112022007753B4 (de) 2026-01-22
CN119768912A (zh) 2025-04-04

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