JP7801122B2 - 熱電変換素子及び熱電変換素子の製造方法 - Google Patents

熱電変換素子及び熱電変換素子の製造方法

Info

Publication number
JP7801122B2
JP7801122B2 JP2021199328A JP2021199328A JP7801122B2 JP 7801122 B2 JP7801122 B2 JP 7801122B2 JP 2021199328 A JP2021199328 A JP 2021199328A JP 2021199328 A JP2021199328 A JP 2021199328A JP 7801122 B2 JP7801122 B2 JP 7801122B2
Authority
JP
Japan
Prior art keywords
thermoelectric conversion
layer
electrode
cells
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021199328A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023084926A5 (https=
JP2023084926A (ja
Inventor
暢哉 世古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianma Japan Ltd
Original Assignee
Tianma Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianma Japan Ltd filed Critical Tianma Japan Ltd
Priority to JP2021199328A priority Critical patent/JP7801122B2/ja
Priority to US18/073,258 priority patent/US11849640B2/en
Priority to CN202211532141.9A priority patent/CN116249425A/zh
Publication of JP2023084926A publication Critical patent/JP2023084926A/ja
Priority to US18/503,940 priority patent/US12082503B2/en
Publication of JP2023084926A5 publication Critical patent/JP2023084926A5/ja
Application granted granted Critical
Publication of JP7801122B2 publication Critical patent/JP7801122B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
JP2021199328A 2021-12-08 2021-12-08 熱電変換素子及び熱電変換素子の製造方法 Active JP7801122B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021199328A JP7801122B2 (ja) 2021-12-08 2021-12-08 熱電変換素子及び熱電変換素子の製造方法
US18/073,258 US11849640B2 (en) 2021-12-08 2022-12-01 Thermoelectric conversion element and manufacturing method for thermoelectric conversion element
CN202211532141.9A CN116249425A (zh) 2021-12-08 2022-12-01 热电转换元件及用于热电转换元件的制造方法
US18/503,940 US12082503B2 (en) 2021-12-08 2023-11-07 Thermoelectric conversion element and manufacturing method for thermoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021199328A JP7801122B2 (ja) 2021-12-08 2021-12-08 熱電変換素子及び熱電変換素子の製造方法

Publications (3)

Publication Number Publication Date
JP2023084926A JP2023084926A (ja) 2023-06-20
JP2023084926A5 JP2023084926A5 (https=) 2024-10-22
JP7801122B2 true JP7801122B2 (ja) 2026-01-16

Family

ID=86607372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021199328A Active JP7801122B2 (ja) 2021-12-08 2021-12-08 熱電変換素子及び熱電変換素子の製造方法

Country Status (3)

Country Link
US (2) US11849640B2 (https=)
JP (1) JP7801122B2 (https=)
CN (1) CN116249425A (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065185A1 (ja) 2009-11-27 2011-06-03 富士通株式会社 熱電変換モジュール及びその製造方法
JP2016219609A (ja) 2015-05-21 2016-12-22 秋田県 熱電変換素子、発電デバイス
JP2018125498A (ja) 2017-02-03 2018-08-09 Tdk株式会社 熱電変換装置
US20190334075A1 (en) 2015-05-14 2019-10-31 Sridhar Kasichainula Method of producing a flexible thermoelectric device to harvest energy for wearable applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447915B2 (ja) * 1997-04-28 2003-09-16 シャープ株式会社 熱電素子及びそれを用いた熱電素子モジュール
TW468360B (en) * 1999-11-04 2001-12-11 Jeng-San Jou Thermopile infrared device, thermalpile infrared array device and the manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065185A1 (ja) 2009-11-27 2011-06-03 富士通株式会社 熱電変換モジュール及びその製造方法
US20190334075A1 (en) 2015-05-14 2019-10-31 Sridhar Kasichainula Method of producing a flexible thermoelectric device to harvest energy for wearable applications
JP2016219609A (ja) 2015-05-21 2016-12-22 秋田県 熱電変換素子、発電デバイス
JP2018125498A (ja) 2017-02-03 2018-08-09 Tdk株式会社 熱電変換装置

Also Published As

Publication number Publication date
US20230180613A1 (en) 2023-06-08
US12082503B2 (en) 2024-09-03
US20240074314A1 (en) 2024-02-29
US11849640B2 (en) 2023-12-19
JP2023084926A (ja) 2023-06-20
CN116249425A (zh) 2023-06-09

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