JP7789208B2 - 半導体装置、電力変換装置、および、半導体装置の製造方法 - Google Patents

半導体装置、電力変換装置、および、半導体装置の製造方法

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Publication number
JP7789208B2
JP7789208B2 JP2024528425A JP2024528425A JP7789208B2 JP 7789208 B2 JP7789208 B2 JP 7789208B2 JP 2024528425 A JP2024528425 A JP 2024528425A JP 2024528425 A JP2024528425 A JP 2024528425A JP 7789208 B2 JP7789208 B2 JP 7789208B2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor device
protective insulating
arithmetic mean
mean roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024528425A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023248670A5 (https=
JPWO2023248670A1 (https=
Inventor
和成 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2023248670A1 publication Critical patent/JPWO2023248670A1/ja
Publication of JPWO2023248670A5 publication Critical patent/JPWO2023248670A5/ja
Application granted granted Critical
Publication of JP7789208B2 publication Critical patent/JP7789208B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2024528425A 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法 Active JP7789208B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022100048 2022-06-22
JP2022100048 2022-06-22
PCT/JP2023/018941 WO2023248670A1 (ja) 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023248670A1 JPWO2023248670A1 (https=) 2023-12-28
JPWO2023248670A5 JPWO2023248670A5 (https=) 2024-09-13
JP7789208B2 true JP7789208B2 (ja) 2025-12-19

Family

ID=89379721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024528425A Active JP7789208B2 (ja) 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20250273527A1 (https=)
JP (1) JP7789208B2 (https=)
CN (1) CN119384877A (https=)
DE (1) DE112023002719T5 (https=)
WO (1) WO2023248670A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048639A (ja) 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
JP2006351943A (ja) 2005-06-17 2006-12-28 Toppan Printing Co Ltd マイクロ反応チップおよびその製造方法
JP2018117026A (ja) 2017-01-17 2018-07-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021033664A1 (ja) 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048639A (ja) 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
JP2006351943A (ja) 2005-06-17 2006-12-28 Toppan Printing Co Ltd マイクロ反応チップおよびその製造方法
JP2018117026A (ja) 2017-01-17 2018-07-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021033664A1 (ja) 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Also Published As

Publication number Publication date
JPWO2023248670A1 (https=) 2023-12-28
CN119384877A (zh) 2025-01-28
US20250273527A1 (en) 2025-08-28
WO2023248670A1 (ja) 2023-12-28
DE112023002719T5 (de) 2025-04-17

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