CN119384877A - 半导体装置、电力转换装置以及半导体装置的制造方法 - Google Patents

半导体装置、电力转换装置以及半导体装置的制造方法 Download PDF

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Publication number
CN119384877A
CN119384877A CN202380047145.4A CN202380047145A CN119384877A CN 119384877 A CN119384877 A CN 119384877A CN 202380047145 A CN202380047145 A CN 202380047145A CN 119384877 A CN119384877 A CN 119384877A
Authority
CN
China
Prior art keywords
insulating film
semiconductor device
protective insulating
electrode layer
average roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380047145.4A
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English (en)
Chinese (zh)
Inventor
中田和成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN119384877A publication Critical patent/CN119384877A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202380047145.4A 2022-06-22 2023-05-22 半导体装置、电力转换装置以及半导体装置的制造方法 Pending CN119384877A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022100048 2022-06-22
JP2022-100048 2022-06-22
PCT/JP2023/018941 WO2023248670A1 (ja) 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN119384877A true CN119384877A (zh) 2025-01-28

Family

ID=89379721

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380047145.4A Pending CN119384877A (zh) 2022-06-22 2023-05-22 半导体装置、电力转换装置以及半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20250273527A1 (https=)
JP (1) JP7789208B2 (https=)
CN (1) CN119384877A (https=)
DE (1) DE112023002719T5 (https=)
WO (1) WO2023248670A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048639A (ja) * 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
JP5017805B2 (ja) * 2005-06-17 2012-09-05 凸版印刷株式会社 マイクロ反応チップの製造方法
JP6855804B2 (ja) * 2017-01-17 2021-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021033664A1 (ja) * 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Also Published As

Publication number Publication date
JP7789208B2 (ja) 2025-12-19
JPWO2023248670A1 (https=) 2023-12-28
US20250273527A1 (en) 2025-08-28
WO2023248670A1 (ja) 2023-12-28
DE112023002719T5 (de) 2025-04-17

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