JPWO2023248670A1 - - Google Patents

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Publication number
JPWO2023248670A1
JPWO2023248670A1 JP2024528425A JP2024528425A JPWO2023248670A1 JP WO2023248670 A1 JPWO2023248670 A1 JP WO2023248670A1 JP 2024528425 A JP2024528425 A JP 2024528425A JP 2024528425 A JP2024528425 A JP 2024528425A JP WO2023248670 A1 JPWO2023248670 A1 JP WO2023248670A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024528425A
Other languages
Japanese (ja)
Other versions
JPWO2023248670A5 (https=
JP7789208B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2023248670A1 publication Critical patent/JPWO2023248670A1/ja
Publication of JPWO2023248670A5 publication Critical patent/JPWO2023248670A5/ja
Application granted granted Critical
Publication of JP7789208B2 publication Critical patent/JP7789208B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/01Manufacture or treatment
    • H10D8/051Manufacture or treatment of Schottky diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
JP2024528425A 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法 Active JP7789208B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022100048 2022-06-22
JP2022100048 2022-06-22
PCT/JP2023/018941 WO2023248670A1 (ja) 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023248670A1 true JPWO2023248670A1 (https=) 2023-12-28
JPWO2023248670A5 JPWO2023248670A5 (https=) 2024-09-13
JP7789208B2 JP7789208B2 (ja) 2025-12-19

Family

ID=89379721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024528425A Active JP7789208B2 (ja) 2022-06-22 2023-05-22 半導体装置、電力変換装置、および、半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20250273527A1 (https=)
JP (1) JP7789208B2 (https=)
CN (1) CN119384877A (https=)
DE (1) DE112023002719T5 (https=)
WO (1) WO2023248670A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048639A (ja) * 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
JP2006351943A (ja) * 2005-06-17 2006-12-28 Toppan Printing Co Ltd マイクロ反応チップおよびその製造方法
JP2018117026A (ja) * 2017-01-17 2018-07-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021033664A1 (ja) * 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048639A (ja) * 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
JP2006351943A (ja) * 2005-06-17 2006-12-28 Toppan Printing Co Ltd マイクロ反応チップおよびその製造方法
JP2018117026A (ja) * 2017-01-17 2018-07-26 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2021033664A1 (ja) * 2019-08-21 2021-02-25 株式会社村田製作所 半導体装置

Also Published As

Publication number Publication date
JP7789208B2 (ja) 2025-12-19
CN119384877A (zh) 2025-01-28
US20250273527A1 (en) 2025-08-28
WO2023248670A1 (ja) 2023-12-28
DE112023002719T5 (de) 2025-04-17

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