JP7774999B2 - 光電変換装置 - Google Patents

光電変換装置

Info

Publication number
JP7774999B2
JP7774999B2 JP2021144929A JP2021144929A JP7774999B2 JP 7774999 B2 JP7774999 B2 JP 7774999B2 JP 2021144929 A JP2021144929 A JP 2021144929A JP 2021144929 A JP2021144929 A JP 2021144929A JP 7774999 B2 JP7774999 B2 JP 7774999B2
Authority
JP
Japan
Prior art keywords
semiconductor region
photoelectric conversion
conversion device
conductivity type
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021144929A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023038039A5 (enExample
JP2023038039A (ja
Inventor
和浩 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021144929A priority Critical patent/JP7774999B2/ja
Priority to US17/821,737 priority patent/US12317624B2/en
Publication of JP2023038039A publication Critical patent/JP2023038039A/ja
Publication of JP2023038039A5 publication Critical patent/JP2023038039A5/ja
Application granted granted Critical
Publication of JP7774999B2 publication Critical patent/JP7774999B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021144929A 2021-09-06 2021-09-06 光電変換装置 Active JP7774999B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021144929A JP7774999B2 (ja) 2021-09-06 2021-09-06 光電変換装置
US17/821,737 US12317624B2 (en) 2021-09-06 2022-08-23 Photoelectric conversion apparatus having avalanche diodes, system and movable body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021144929A JP7774999B2 (ja) 2021-09-06 2021-09-06 光電変換装置

Publications (3)

Publication Number Publication Date
JP2023038039A JP2023038039A (ja) 2023-03-16
JP2023038039A5 JP2023038039A5 (enExample) 2024-07-25
JP7774999B2 true JP7774999B2 (ja) 2025-11-25

Family

ID=85386344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021144929A Active JP7774999B2 (ja) 2021-09-06 2021-09-06 光電変換装置

Country Status (2)

Country Link
US (1) US12317624B2 (enExample)
JP (1) JP7774999B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116347946A (zh) * 2023-03-21 2023-06-27 上海天马微电子有限公司 一种显示面板、显示面板的驱动方法及显示装置
WO2025253790A1 (ja) * 2024-06-03 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 光検出素子および光検出装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176904A (ja) 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP2019015505A (ja) 2015-11-30 2019-01-31 シャープ株式会社 光センサ
JP2020047780A (ja) 2018-09-19 2020-03-26 キヤノン株式会社 光検出装置
JP2021002542A (ja) 2019-06-19 2021-01-07 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置
JP2021061330A (ja) 2019-10-07 2021-04-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
JP2021072295A (ja) 2019-10-29 2021-05-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2021090022A (ja) 2019-12-06 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2021100058A (ja) 2019-12-23 2021-07-01 浜松ホトニクス株式会社 半導体光検出素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
JP5185207B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP2014225536A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6570844B2 (ja) * 2015-02-26 2019-09-04 株式会社東芝 光検出器、その製造方法、放射線検出器、および放射線検出装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176904A (ja) 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP2019015505A (ja) 2015-11-30 2019-01-31 シャープ株式会社 光センサ
JP2020047780A (ja) 2018-09-19 2020-03-26 キヤノン株式会社 光検出装置
JP2021002542A (ja) 2019-06-19 2021-01-07 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置
JP2021061330A (ja) 2019-10-07 2021-04-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
JP2021072295A (ja) 2019-10-29 2021-05-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2021090022A (ja) 2019-12-06 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2021100058A (ja) 2019-12-23 2021-07-01 浜松ホトニクス株式会社 半導体光検出素子

Also Published As

Publication number Publication date
US20230069887A1 (en) 2023-03-09
JP2023038039A (ja) 2023-03-16
US12317624B2 (en) 2025-05-27

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