JP7767381B2 - 焦点面アレイ用の高密度コンデンサ - Google Patents

焦点面アレイ用の高密度コンデンサ

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Publication number
JP7767381B2
JP7767381B2 JP2023501760A JP2023501760A JP7767381B2 JP 7767381 B2 JP7767381 B2 JP 7767381B2 JP 2023501760 A JP2023501760 A JP 2023501760A JP 2023501760 A JP2023501760 A JP 2023501760A JP 7767381 B2 JP7767381 B2 JP 7767381B2
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Japan
Prior art keywords
layer
capacitor
insulating layer
electrode
electrically insulating
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JP2023501760A
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English (en)
Japanese (ja)
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JP2023534228A (ja
JP2023534228A5 (https=
Inventor
イー． クルーガー，ユージーン
ケイ． アジュメラ，サミーア
Original Assignee
ディーアールエス ネットワーク アンド イメージング システムズ、リミテッド ライアビリティー カンパニー
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Application filed by ディーアールエス ネットワーク アンド イメージング システムズ、リミテッド ライアビリティー カンパニー filed Critical ディーアールエス ネットワーク アンド イメージング システムズ、リミテッド ライアビリティー カンパニー
Publication of JP2023534228A publication Critical patent/JP2023534228A/ja
Publication of JP2023534228A5 publication Critical patent/JP2023534228A5/ja
Priority to JP2025182710A priority Critical patent/JP2026027310A/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2023501760A 2020-07-13 2021-04-30 焦点面アレイ用の高密度コンデンサ Active JP7767381B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025182710A JP2026027310A (ja) 2020-07-13 2025-10-29 焦点面アレイ用の高密度コンデンサ

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063051028P 2020-07-13 2020-07-13
US63/051,028 2020-07-13
US17/244,679 2021-04-29
US17/244,679 US12094891B2 (en) 2020-07-13 2021-04-29 High-density capacitor for focal plane arrays
PCT/US2021/030143 WO2022015393A1 (en) 2020-07-13 2021-04-30 High-density capacitor for focal plane arrays

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025182710A Division JP2026027310A (ja) 2020-07-13 2025-10-29 焦点面アレイ用の高密度コンデンサ

Publications (3)

Publication Number Publication Date
JP2023534228A JP2023534228A (ja) 2023-08-08
JP2023534228A5 JP2023534228A5 (https=) 2024-05-14
JP7767381B2 true JP7767381B2 (ja) 2025-11-11

Family

ID=79173073

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023501760A Active JP7767381B2 (ja) 2020-07-13 2021-04-30 焦点面アレイ用の高密度コンデンサ
JP2025182710A Pending JP2026027310A (ja) 2020-07-13 2025-10-29 焦点面アレイ用の高密度コンデンサ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025182710A Pending JP2026027310A (ja) 2020-07-13 2025-10-29 焦点面アレイ用の高密度コンデンサ

Country Status (6)

Country Link
US (2) US12094891B2 (https=)
EP (2) EP4676191A2 (https=)
JP (2) JP7767381B2 (https=)
CN (1) CN116195064A (https=)
IL (1) IL299770A (https=)
WO (1) WO2022015393A1 (https=)

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JP2023172505A (ja) * 2022-05-24 2023-12-06 キヤノン株式会社 光電変換装置
US12500186B2 (en) * 2022-07-14 2025-12-16 Micron Technology, Inc. Capacitor having electrodes formed within a substrate
US20250359092A1 (en) * 2024-05-16 2025-11-20 Globalfoundries Singapore Pte. Ltd. Capacitor structures and methods of forming thereof
CN121240471A (zh) * 2025-12-02 2025-12-30 合肥晶合集成电路股份有限公司 电容器结构以及电容器结构的制造方法

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WO2021044762A1 (ja) 2019-09-04 2021-03-11 パナソニックＩｐマネジメント株式会社 撮像装置

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Also Published As

Publication number Publication date
JP2023534228A (ja) 2023-08-08
US12094891B2 (en) 2024-09-17
US20240405032A1 (en) 2024-12-05
EP4179572A1 (en) 2023-05-17
WO2022015393A1 (en) 2022-01-20
JP2026027310A (ja) 2026-02-18
EP4179572A4 (en) 2024-06-26
IL299770A (en) 2023-03-01
US20220013555A1 (en) 2022-01-13
CN116195064A (zh) 2023-05-30
EP4676191A2 (en) 2026-01-07

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