CN116195064A - 用于焦平面阵列的高密度电容器 - Google Patents

用于焦平面阵列的高密度电容器 Download PDF

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Publication number
CN116195064A
CN116195064A CN202180047890.XA CN202180047890A CN116195064A CN 116195064 A CN116195064 A CN 116195064A CN 202180047890 A CN202180047890 A CN 202180047890A CN 116195064 A CN116195064 A CN 116195064A
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CN
China
Prior art keywords
capacitor
layer
electrically insulating
electrode
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180047890.XA
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English (en)
Chinese (zh)
Inventor
尤金·E·克鲁格
萨米尔·K·阿杰梅拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DRS Sensors and Targeting Systems Inc
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DRS Sensors and Targeting Systems Inc
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Filing date
Publication date
Application filed by DRS Sensors and Targeting Systems Inc filed Critical DRS Sensors and Targeting Systems Inc
Publication of CN116195064A publication Critical patent/CN116195064A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/01Manufacture or treatment
    • H10D1/041Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/692Electrodes
    • H10D1/711Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/191Photoconductor image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements

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  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202180047890.XA 2020-07-13 2021-04-30 用于焦平面阵列的高密度电容器 Pending CN116195064A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063051028P 2020-07-13 2020-07-13
US63/051,028 2020-07-13
US17/244,679 2021-04-29
US17/244,679 US12094891B2 (en) 2020-07-13 2021-04-29 High-density capacitor for focal plane arrays
PCT/US2021/030143 WO2022015393A1 (en) 2020-07-13 2021-04-30 High-density capacitor for focal plane arrays

Publications (1)

Publication Number Publication Date
CN116195064A true CN116195064A (zh) 2023-05-30

Family

ID=79173073

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180047890.XA Pending CN116195064A (zh) 2020-07-13 2021-04-30 用于焦平面阵列的高密度电容器

Country Status (6)

Country Link
US (2) US12094891B2 (https=)
EP (2) EP4676191A2 (https=)
JP (2) JP7767381B2 (https=)
CN (1) CN116195064A (https=)
IL (1) IL299770A (https=)
WO (1) WO2022015393A1 (https=)

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN121240471A (zh) * 2025-12-02 2025-12-30 合肥晶合集成电路股份有限公司 电容器结构以及电容器结构的制造方法

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Publication number Publication date
JP2023534228A (ja) 2023-08-08
US12094891B2 (en) 2024-09-17
US20240405032A1 (en) 2024-12-05
EP4179572A1 (en) 2023-05-17
WO2022015393A1 (en) 2022-01-20
JP2026027310A (ja) 2026-02-18
EP4179572A4 (en) 2024-06-26
JP7767381B2 (ja) 2025-11-11
IL299770A (en) 2023-03-01
US20220013555A1 (en) 2022-01-13
EP4676191A2 (en) 2026-01-07

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