IL299770A - High density capacitor for focal plane arrays - Google Patents

High density capacitor for focal plane arrays

Info

Publication number
IL299770A
IL299770A IL299770A IL29977023A IL299770A IL 299770 A IL299770 A IL 299770A IL 299770 A IL299770 A IL 299770A IL 29977023 A IL29977023 A IL 29977023A IL 299770 A IL299770 A IL 299770A
Authority
IL
Israel
Prior art keywords
focal plane
plane arrays
density capacitor
capacitor
density
Prior art date
Application number
IL299770A
Other languages
English (en)
Hebrew (he)
Original Assignee
Drs Network & Imaging Systems Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Drs Network & Imaging Systems Llc filed Critical Drs Network & Imaging Systems Llc
Publication of IL299770A publication Critical patent/IL299770A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
IL299770A 2020-07-13 2021-04-30 High density capacitor for focal plane arrays IL299770A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063051028P 2020-07-13 2020-07-13
US17/244,679 US12094891B2 (en) 2020-07-13 2021-04-29 High-density capacitor for focal plane arrays
PCT/US2021/030143 WO2022015393A1 (en) 2020-07-13 2021-04-30 High-density capacitor for focal plane arrays

Publications (1)

Publication Number Publication Date
IL299770A true IL299770A (en) 2023-03-01

Family

ID=79173073

Family Applications (1)

Application Number Title Priority Date Filing Date
IL299770A IL299770A (en) 2020-07-13 2021-04-30 High density capacitor for focal plane arrays

Country Status (6)

Country Link
US (2) US12094891B2 (https=)
EP (2) EP4676191A2 (https=)
JP (2) JP7767381B2 (https=)
CN (1) CN116195064A (https=)
IL (1) IL299770A (https=)
WO (1) WO2022015393A1 (https=)

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US20250359092A1 (en) * 2024-05-16 2025-11-20 Globalfoundries Singapore Pte. Ltd. Capacitor structures and methods of forming thereof
CN121240471A (zh) * 2025-12-02 2025-12-30 合肥晶合集成电路股份有限公司 电容器结构以及电容器结构的制造方法

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Also Published As

Publication number Publication date
JP2023534228A (ja) 2023-08-08
US12094891B2 (en) 2024-09-17
US20240405032A1 (en) 2024-12-05
EP4179572A1 (en) 2023-05-17
WO2022015393A1 (en) 2022-01-20
JP2026027310A (ja) 2026-02-18
EP4179572A4 (en) 2024-06-26
JP7767381B2 (ja) 2025-11-11
US20220013555A1 (en) 2022-01-13
CN116195064A (zh) 2023-05-30
EP4676191A2 (en) 2026-01-07

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