JP7763792B2 - 搬送装置、搬送方法、及び半導体装置の製造方法 - Google Patents

搬送装置、搬送方法、及び半導体装置の製造方法

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Publication number
JP7763792B2
JP7763792B2 JP2022578495A JP2022578495A JP7763792B2 JP 7763792 B2 JP7763792 B2 JP 7763792B2 JP 2022578495 A JP2022578495 A JP 2022578495A JP 2022578495 A JP2022578495 A JP 2022578495A JP 7763792 B2 JP7763792 B2 JP 7763792B2
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JP
Japan
Prior art keywords
substrate
levitation unit
laser light
transport
holding mechanism
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JP2022578495A
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English (en)
Japanese (ja)
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JPWO2022163783A1 (https=
Inventor
芳広 山口
貴洋 藤
博亮 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSW Aktina System Co Ltd
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JSW Aktina System Co Ltd
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Publication of JPWO2022163783A1 publication Critical patent/JPWO2022163783A1/ja
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Publication of JP7763792B2 publication Critical patent/JP7763792B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3208—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/36—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2022578495A 2021-01-29 2022-01-27 搬送装置、搬送方法、及び半導体装置の製造方法 Active JP7763792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021012922 2021-01-29
JP2021012922 2021-01-29
PCT/JP2022/003187 WO2022163783A1 (ja) 2021-01-29 2022-01-27 搬送装置、搬送方法、及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022163783A1 JPWO2022163783A1 (https=) 2022-08-04
JP7763792B2 true JP7763792B2 (ja) 2025-11-04

Family

ID=82653521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022578495A Active JP7763792B2 (ja) 2021-01-29 2022-01-27 搬送装置、搬送方法、及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20240120198A1 (https=)
JP (1) JP7763792B2 (https=)
KR (1) KR20230135077A (https=)
CN (1) CN116762156A (https=)
WO (1) WO2022163783A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024214213A1 (ja) * 2023-04-12 2024-10-17 Ｊｓｗアクティナシステム株式会社 搬送装置、レーザ照射装置、搬送方法、及び半導体装置の製造方法
WO2025069354A1 (ja) * 2023-09-28 2025-04-03 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、レーザ照射方法、及び化合物半導体デバイスの製造方法
WO2025105097A1 (ja) * 2023-11-17 2025-05-22 住友重機械工業株式会社 レーザ処理装置、レーザアニール装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216971A (ja) 2006-02-22 2006-08-17 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008147291A (ja) 2006-12-07 2008-06-26 Dainippon Printing Co Ltd 基板支持装置、基板支持方法、基板加工装置、基板加工方法、表示装置構成部材の製造方法
US20130130514A1 (en) 2010-03-12 2013-05-23 Samsung Display Co., Ltd. Crystallization method of amorphous silicon layer
WO2018168002A1 (ja) 2017-03-16 2018-09-20 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
WO2019138659A1 (ja) 2018-01-11 2019-07-18 株式会社日本製鋼所 レーザ処理装置、レーザ処理方法及び半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4056577B2 (ja) * 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JPH11243057A (ja) * 1998-02-26 1999-09-07 Sony Corp 半導体装置の製造方法および半導体装置の製造装置
JP6754266B2 (ja) 2016-10-14 2020-09-09 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216971A (ja) 2006-02-22 2006-08-17 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008147291A (ja) 2006-12-07 2008-06-26 Dainippon Printing Co Ltd 基板支持装置、基板支持方法、基板加工装置、基板加工方法、表示装置構成部材の製造方法
US20130130514A1 (en) 2010-03-12 2013-05-23 Samsung Display Co., Ltd. Crystallization method of amorphous silicon layer
WO2018168002A1 (ja) 2017-03-16 2018-09-20 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2018157000A (ja) 2017-03-16 2018-10-04 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
US20200006096A1 (en) 2017-03-16 2020-01-02 The Japan Steel Works, Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
WO2019138659A1 (ja) 2018-01-11 2019-07-18 株式会社日本製鋼所 レーザ処理装置、レーザ処理方法及び半導体装置の製造方法
JP2019121754A (ja) 2018-01-11 2019-07-22 株式会社日本製鋼所 レーザ処理装置、レーザ処理方法及び半導体装置の製造方法
US20210187659A1 (en) 2018-01-11 2021-06-24 The Japan Steel Works, Ltd. Laser processing apparatus, laser processing method, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20230135077A (ko) 2023-09-22
WO2022163783A1 (ja) 2022-08-04
CN116762156A (zh) 2023-09-15
US20240120198A1 (en) 2024-04-11
JPWO2022163783A1 (https=) 2022-08-04

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