JP7761524B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法

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Publication number
JP7761524B2
JP7761524B2 JP2022074506A JP2022074506A JP7761524B2 JP 7761524 B2 JP7761524 B2 JP 7761524B2 JP 2022074506 A JP2022074506 A JP 2022074506A JP 2022074506 A JP2022074506 A JP 2022074506A JP 7761524 B2 JP7761524 B2 JP 7761524B2
Authority
JP
Japan
Prior art keywords
layer
film
semiconductor device
electrode film
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022074506A
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English (en)
Japanese (ja)
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JP2023163540A (ja
JP2023163540A5 (https=
Inventor
英治 平岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2022074506A priority Critical patent/JP7761524B2/ja
Priority to US18/176,671 priority patent/US20230352397A1/en
Publication of JP2023163540A publication Critical patent/JP2023163540A/ja
Publication of JP2023163540A5 publication Critical patent/JP2023163540A5/ja
Application granted granted Critical
Publication of JP7761524B2 publication Critical patent/JP7761524B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
JP2022074506A 2022-04-28 2022-04-28 半導体装置及び半導体装置の製造方法 Active JP7761524B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022074506A JP7761524B2 (ja) 2022-04-28 2022-04-28 半導体装置及び半導体装置の製造方法
US18/176,671 US20230352397A1 (en) 2022-04-28 2023-03-01 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022074506A JP7761524B2 (ja) 2022-04-28 2022-04-28 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2023163540A JP2023163540A (ja) 2023-11-10
JP2023163540A5 JP2023163540A5 (https=) 2024-09-24
JP7761524B2 true JP7761524B2 (ja) 2025-10-28

Family

ID=88512641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022074506A Active JP7761524B2 (ja) 2022-04-28 2022-04-28 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20230352397A1 (https=)
JP (1) JP7761524B2 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311299A (ja) 2004-03-26 2005-11-04 Hitachi Ltd 半導体装置及びその製造方法
JP2014165458A (ja) 2013-02-27 2014-09-08 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2015230959A (ja) 2014-06-04 2015-12-21 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311299A (ja) 2004-03-26 2005-11-04 Hitachi Ltd 半導体装置及びその製造方法
JP2014165458A (ja) 2013-02-27 2014-09-08 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2015230959A (ja) 2014-06-04 2015-12-21 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
JP2023163540A (ja) 2023-11-10
US20230352397A1 (en) 2023-11-02

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