JP7747177B2 - 電子部品及び回路装置 - Google Patents

電子部品及び回路装置

Info

Publication number
JP7747177B2
JP7747177B2 JP2024509886A JP2024509886A JP7747177B2 JP 7747177 B2 JP7747177 B2 JP 7747177B2 JP 2024509886 A JP2024509886 A JP 2024509886A JP 2024509886 A JP2024509886 A JP 2024509886A JP 7747177 B2 JP7747177 B2 JP 7747177B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
electronic component
electrode
conductor portion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024509886A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023181803A5 (https=
JPWO2023181803A1 (https=
Inventor
翔太 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2023181803A1 publication Critical patent/JPWO2023181803A1/ja
Publication of JPWO2023181803A5 publication Critical patent/JPWO2023181803A5/ja
Application granted granted Critical
Publication of JP7747177B2 publication Critical patent/JP7747177B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2024509886A 2022-03-23 2023-02-28 電子部品及び回路装置 Active JP7747177B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022046259 2022-03-23
JP2022046259 2022-03-23
PCT/JP2023/007305 WO2023181803A1 (ja) 2022-03-23 2023-02-28 電子部品及び回路装置

Publications (3)

Publication Number Publication Date
JPWO2023181803A1 JPWO2023181803A1 (https=) 2023-09-28
JPWO2023181803A5 JPWO2023181803A5 (https=) 2024-11-28
JP7747177B2 true JP7747177B2 (ja) 2025-10-01

Family

ID=88100559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024509886A Active JP7747177B2 (ja) 2022-03-23 2023-02-28 電子部品及び回路装置

Country Status (4)

Country Link
US (1) US20250015001A1 (https=)
JP (1) JP7747177B2 (https=)
CN (1) CN118872056A (https=)
WO (1) WO2023181803A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019865A1 (en) 1997-11-05 2001-09-06 Erdeljac John P. Metallization outside protective overcoat for improved capacitors and inductors
JP2009515356A (ja) 2005-11-08 2009-04-09 エヌエックスピー ビー ヴィ 高周波数動作においてアプリケーションを分離するのに適したトレンチキャパシタ装置
WO2009104132A1 (en) 2008-02-20 2009-08-27 Nxp B.V. Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrate
JP2015111671A (ja) 2013-11-22 2015-06-18 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ 集積キャパシタおよびそれを製造する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4835082B2 (ja) * 2005-09-28 2011-12-14 株式会社デンソー 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019865A1 (en) 1997-11-05 2001-09-06 Erdeljac John P. Metallization outside protective overcoat for improved capacitors and inductors
JP2009515356A (ja) 2005-11-08 2009-04-09 エヌエックスピー ビー ヴィ 高周波数動作においてアプリケーションを分離するのに適したトレンチキャパシタ装置
WO2009104132A1 (en) 2008-02-20 2009-08-27 Nxp B.V. Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrate
JP2015111671A (ja) 2013-11-22 2015-06-18 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ 集積キャパシタおよびそれを製造する方法

Also Published As

Publication number Publication date
US20250015001A1 (en) 2025-01-09
WO2023181803A1 (ja) 2023-09-28
JPWO2023181803A1 (https=) 2023-09-28
CN118872056A (zh) 2024-10-29

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