JP7724153B2 - 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 - Google Patents
順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御Info
- Publication number
- JP7724153B2 JP7724153B2 JP2021514425A JP2021514425A JP7724153B2 JP 7724153 B2 JP7724153 B2 JP 7724153B2 JP 2021514425 A JP2021514425 A JP 2021514425A JP 2021514425 A JP2021514425 A JP 2021514425A JP 7724153 B2 JP7724153 B2 JP 7724153B2
- Authority
- JP
- Japan
- Prior art keywords
- information
- run
- runs
- coating
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023107163A JP2023134537A (ja) | 2018-09-28 | 2023-06-29 | 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/108297 WO2020062016A1 (en) | 2018-09-28 | 2018-09-28 | Coating control using forward parameter correction and enhanced reverse engineering |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023107163A Division JP2023134537A (ja) | 2018-09-28 | 2023-06-29 | 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022511320A JP2022511320A (ja) | 2022-01-31 |
| JP2022511320A5 JP2022511320A5 (https=) | 2025-01-09 |
| JP7724153B2 true JP7724153B2 (ja) | 2025-08-15 |
Family
ID=69949498
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021514425A Active JP7724153B2 (ja) | 2018-09-28 | 2018-09-28 | 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 |
| JP2023107163A Withdrawn JP2023134537A (ja) | 2018-09-28 | 2023-06-29 | 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023107163A Withdrawn JP2023134537A (ja) | 2018-09-28 | 2023-06-29 | 順方向パラメータ補正および増強されたリバースエンジニアリングを使用するコーティング制御 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11692263B2 (https=) |
| EP (1) | EP3841227A4 (https=) |
| JP (2) | JP7724153B2 (https=) |
| KR (1) | KR102761027B1 (https=) |
| CN (1) | CN112752865A (https=) |
| TW (1) | TWI793371B (https=) |
| WO (1) | WO2020062016A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11481524B2 (en) * | 2020-06-26 | 2022-10-25 | Microsoft Technology Licensing, Llc | Conformal coating iteration |
| WO2022240385A1 (en) | 2021-05-10 | 2022-11-17 | Carl Zeiss Vision International Gmbh | A method for calibrating optical coating apparatuses |
| US12526655B2 (en) | 2023-07-10 | 2026-01-13 | T-Mobile Usa, Inc. | Managing bandwidth consumption associated with multiple interaction channels of a wireless telecommunication network related to information campaigns |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294444A (ja) | 2001-03-30 | 2002-10-09 | Shibaura Mechatronics Corp | 成膜装置および成膜装置用プログラム |
| JP2007321170A (ja) | 2006-05-30 | 2007-12-13 | Sony Corp | スパッタ成膜方法、光吸収膜並びにndフィルター |
| JP2008223140A (ja) | 2007-03-13 | 2008-09-25 | Jds Uniphase Corp | 複数の材料の混合物から構成され、かつ、予め決められた屈折率を有する層を堆積させるための方法およびスパッタ堆積システム |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0733573B2 (ja) * | 1988-10-14 | 1995-04-12 | 日本電信電話株式会社 | 薄膜形成方法 |
| JPH0772307A (ja) * | 1993-09-03 | 1995-03-17 | Canon Inc | 薄膜形成方法及び装置 |
| US5911856A (en) | 1993-09-03 | 1999-06-15 | Canon Kabushiki Kaisha | Method for forming thin film |
| US5772861A (en) * | 1995-10-16 | 1998-06-30 | Viratec Thin Films, Inc. | System for evaluating thin film coatings |
| US6217720B1 (en) * | 1997-06-03 | 2001-04-17 | National Research Council Of Canada | Multi-layer reactive sputtering method with reduced stabilization time |
| IL132639A (en) * | 1999-10-28 | 2003-11-23 | Nova Measuring Instr Ltd | Optical measurements of patterned structures |
| WO2001090434A2 (en) | 2000-05-24 | 2001-11-29 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| JP3965935B2 (ja) | 2000-07-26 | 2007-08-29 | セイコーエプソン株式会社 | 電気光学装置及び投射型表示装置 |
| US7324865B1 (en) | 2001-05-09 | 2008-01-29 | Advanced Micro Devices, Inc. | Run-to-run control method for automated control of metal deposition processes |
| DE10124609B4 (de) | 2001-05-17 | 2012-12-27 | Aixtron Se | Verfahren zum Abscheiden aktiver Schichten auf Substraten |
| JP4327439B2 (ja) * | 2002-10-31 | 2009-09-09 | 株式会社アルバック | 誘電体多層膜の製造装置 |
| US20060196765A1 (en) * | 2005-03-07 | 2006-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metallization target optimization method providing enhanced metallization layer uniformity |
| JP2007072307A (ja) | 2005-09-08 | 2007-03-22 | Matsushita Electric Works Ltd | 光モジュール |
| CN102191475B (zh) * | 2011-04-15 | 2012-10-10 | 中国科学院上海光学精密机械研究所 | 提高薄膜光谱性能的膜厚监控方法 |
| CN102912306B (zh) * | 2012-10-20 | 2014-04-16 | 大连理工大学 | 计算机自动控制的高功率脉冲磁控溅射设备及工艺 |
| CN103540906B (zh) * | 2013-09-29 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | 光控-晶控综合膜厚监控方法 |
| US10113228B2 (en) * | 2014-06-20 | 2018-10-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for controlling semiconductor deposition operation |
| JP6619934B2 (ja) | 2015-01-07 | 2019-12-11 | 日東電工株式会社 | 多層光学膜の膜厚制御方法、多層光学膜の製造方法および多層光学膜のスパッタ装置 |
| JP6822807B2 (ja) | 2015-09-30 | 2021-01-27 | キヤノンメディカルシステムズ株式会社 | X線コンピュータ断層撮影装置 |
-
2018
- 2018-09-28 EP EP18935654.6A patent/EP3841227A4/en active Pending
- 2018-09-28 US US16/619,840 patent/US11692263B2/en active Active
- 2018-09-28 CN CN201880098099.XA patent/CN112752865A/zh active Pending
- 2018-09-28 WO PCT/CN2018/108297 patent/WO2020062016A1/en not_active Ceased
- 2018-09-28 KR KR1020217012772A patent/KR102761027B1/ko active Active
- 2018-09-28 JP JP2021514425A patent/JP7724153B2/ja active Active
-
2019
- 2019-09-27 TW TW108135191A patent/TWI793371B/zh active
-
2023
- 2023-06-29 JP JP2023107163A patent/JP2023134537A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294444A (ja) | 2001-03-30 | 2002-10-09 | Shibaura Mechatronics Corp | 成膜装置および成膜装置用プログラム |
| JP2007321170A (ja) | 2006-05-30 | 2007-12-13 | Sony Corp | スパッタ成膜方法、光吸収膜並びにndフィルター |
| JP2008223140A (ja) | 2007-03-13 | 2008-09-25 | Jds Uniphase Corp | 複数の材料の混合物から構成され、かつ、予め決められた屈折率を有する層を堆積させるための方法およびスパッタ堆積システム |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022511320A (ja) | 2022-01-31 |
| KR102761027B1 (ko) | 2025-01-31 |
| US20210332474A1 (en) | 2021-10-28 |
| WO2020062016A1 (en) | 2020-04-02 |
| KR20210063424A (ko) | 2021-06-01 |
| EP3841227A4 (en) | 2021-10-06 |
| JP2023134537A (ja) | 2023-09-27 |
| US11692263B2 (en) | 2023-07-04 |
| TWI793371B (zh) | 2023-02-21 |
| TW202031919A (zh) | 2020-09-01 |
| CN112752865A (zh) | 2021-05-04 |
| EP3841227A1 (en) | 2021-06-30 |
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