CN112752865A - 使用正向参数校正和增强的逆向工程的涂布控制 - Google Patents

使用正向参数校正和增强的逆向工程的涂布控制 Download PDF

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Publication number
CN112752865A
CN112752865A CN201880098099.XA CN201880098099A CN112752865A CN 112752865 A CN112752865 A CN 112752865A CN 201880098099 A CN201880098099 A CN 201880098099A CN 112752865 A CN112752865 A CN 112752865A
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CN
China
Prior art keywords
runs
coating
information
parameter
target
Prior art date
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Pending
Application number
CN201880098099.XA
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English (en)
Chinese (zh)
Inventor
马库斯·K·提尔斯科
乔治·J·欧肯法斯
马吕斯·格里戈尼斯
安德鲁·克拉克
彭东工
夏银翔
袁照
埃里克·尼班克
尼尔·平克顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Weiyawei Communication Technology Co ltd
Viavi Solutions Inc
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Weiyawei Communication Technology Co ltd
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Filing date
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Application filed by Weiyawei Communication Technology Co ltd filed Critical Weiyawei Communication Technology Co ltd
Publication of CN112752865A publication Critical patent/CN112752865A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
CN201880098099.XA 2018-09-28 2018-09-28 使用正向参数校正和增强的逆向工程的涂布控制 Pending CN112752865A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/108297 WO2020062016A1 (en) 2018-09-28 2018-09-28 Coating control using forward parameter correction and enhanced reverse engineering

Publications (1)

Publication Number Publication Date
CN112752865A true CN112752865A (zh) 2021-05-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880098099.XA Pending CN112752865A (zh) 2018-09-28 2018-09-28 使用正向参数校正和增强的逆向工程的涂布控制

Country Status (7)

Country Link
US (1) US11692263B2 (https=)
EP (1) EP3841227A4 (https=)
JP (2) JP7724153B2 (https=)
KR (1) KR102761027B1 (https=)
CN (1) CN112752865A (https=)
TW (1) TWI793371B (https=)
WO (1) WO2020062016A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11481524B2 (en) * 2020-06-26 2022-10-25 Microsoft Technology Licensing, Llc Conformal coating iteration
WO2022240385A1 (en) 2021-05-10 2022-11-17 Carl Zeiss Vision International Gmbh A method for calibrating optical coating apparatuses
US12526655B2 (en) 2023-07-10 2026-01-13 T-Mobile Usa, Inc. Managing bandwidth consumption associated with multiple interaction channels of a wireless telecommunication network related to information campaigns

Citations (7)

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US5772861A (en) * 1995-10-16 1998-06-30 Viratec Thin Films, Inc. System for evaluating thin film coatings
US6217720B1 (en) * 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
US6556947B1 (en) * 1999-10-28 2003-04-29 Nova Measuring Instruments Ltd. Optical measurements of patterned structures
JP2004151492A (ja) * 2002-10-31 2004-05-27 Ulvac Japan Ltd 誘電体多層膜の製造装置
CN101265568A (zh) * 2007-03-13 2008-09-17 Jds尤尼弗思公司 用于沉积由混合物组成并具有预定折射率的层的方法和系统
CN102912306A (zh) * 2012-10-20 2013-02-06 大连理工大学 计算机自动控制的高功率脉冲磁控溅射设备及工艺
CN103540906A (zh) * 2013-09-29 2014-01-29 中国科学院上海光学精密机械研究所 光控-晶控综合膜厚监控方法

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JPH0733573B2 (ja) * 1988-10-14 1995-04-12 日本電信電話株式会社 薄膜形成方法
JPH0772307A (ja) * 1993-09-03 1995-03-17 Canon Inc 薄膜形成方法及び装置
US5911856A (en) 1993-09-03 1999-06-15 Canon Kabushiki Kaisha Method for forming thin film
WO2001090434A2 (en) 2000-05-24 2001-11-29 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
JP3965935B2 (ja) 2000-07-26 2007-08-29 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
JP4805469B2 (ja) * 2001-03-30 2011-11-02 芝浦メカトロニクス株式会社 成膜装置および成膜装置用プログラム
US7324865B1 (en) 2001-05-09 2008-01-29 Advanced Micro Devices, Inc. Run-to-run control method for automated control of metal deposition processes
DE10124609B4 (de) 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten
US20060196765A1 (en) * 2005-03-07 2006-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metallization target optimization method providing enhanced metallization layer uniformity
JP2007072307A (ja) 2005-09-08 2007-03-22 Matsushita Electric Works Ltd 光モジュール
JP4929842B2 (ja) 2006-05-30 2012-05-09 ソニー株式会社 Ｎｄフィルターおよびｎｄフィルターの製造方法
CN102191475B (zh) * 2011-04-15 2012-10-10 中国科学院上海光学精密机械研究所 提高薄膜光谱性能的膜厚监控方法
US10113228B2 (en) * 2014-06-20 2018-10-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling semiconductor deposition operation
JP6619934B2 (ja) 2015-01-07 2019-12-11 日東電工株式会社 多層光学膜の膜厚制御方法、多層光学膜の製造方法および多層光学膜のスパッタ装置
JP6822807B2 (ja) 2015-09-30 2021-01-27 キヤノンメディカルシステムズ株式会社 Ｘ線コンピュータ断層撮影装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772861A (en) * 1995-10-16 1998-06-30 Viratec Thin Films, Inc. System for evaluating thin film coatings
US6217720B1 (en) * 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
US6556947B1 (en) * 1999-10-28 2003-04-29 Nova Measuring Instruments Ltd. Optical measurements of patterned structures
JP2004151492A (ja) * 2002-10-31 2004-05-27 Ulvac Japan Ltd 誘電体多層膜の製造装置
CN101265568A (zh) * 2007-03-13 2008-09-17 Jds尤尼弗思公司 用于沉积由混合物组成并具有预定折射率的层的方法和系统
CN102912306A (zh) * 2012-10-20 2013-02-06 大连理工大学 计算机自动控制的高功率脉冲磁控溅射设备及工艺
CN103540906A (zh) * 2013-09-29 2014-01-29 中国科学院上海光学精密机械研究所 光控-晶控综合膜厚监控方法

Also Published As

Publication number Publication date
JP2022511320A (ja) 2022-01-31
KR102761027B1 (ko) 2025-01-31
US20210332474A1 (en) 2021-10-28
WO2020062016A1 (en) 2020-04-02
KR20210063424A (ko) 2021-06-01
EP3841227A4 (en) 2021-10-06
JP2023134537A (ja) 2023-09-27
US11692263B2 (en) 2023-07-04
TWI793371B (zh) 2023-02-21
TW202031919A (zh) 2020-09-01
EP3841227A1 (en) 2021-06-30
JP7724153B2 (ja) 2025-08-15

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