JP7678881B2 - 処理方法及び処理システム - Google Patents

処理方法及び処理システム Download PDF

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Publication number
JP7678881B2
JP7678881B2 JP2023542300A JP2023542300A JP7678881B2 JP 7678881 B2 JP7678881 B2 JP 7678881B2 JP 2023542300 A JP2023542300 A JP 2023542300A JP 2023542300 A JP2023542300 A JP 2023542300A JP 7678881 B2 JP7678881 B2 JP 7678881B2
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Japan
Prior art keywords
substrate
laser
laser light
wafer
interface
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JP2023542300A
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English (en)
Japanese (ja)
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JPWO2023021952A5 (https=
JPWO2023021952A1 (https=
Inventor
隼斗 田之上
陽平 山下
康隆 溝本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2023021952A1 publication Critical patent/JPWO2023021952A1/ja
Publication of JPWO2023021952A5 publication Critical patent/JPWO2023021952A5/ja
Priority to JP2025076594A priority Critical patent/JP2025105952A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2023542300A 2021-08-16 2022-07-27 処理方法及び処理システム Active JP7678881B2 (ja)

Priority Applications (1)

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JP2025076594A JP2025105952A (ja) 2021-08-16 2025-05-02 処理方法及び処理システム

Applications Claiming Priority (5)

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JP2021132199 2021-08-16
JP2021132199 2021-08-16
JP2021199502 2021-12-08
JP2021199502 2021-12-08
PCT/JP2022/029027 WO2023021952A1 (ja) 2021-08-16 2022-07-27 処理方法及び処理システム

Related Child Applications (1)

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JP2025076594A Division JP2025105952A (ja) 2021-08-16 2025-05-02 処理方法及び処理システム

Publications (3)

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JPWO2023021952A1 JPWO2023021952A1 (https=) 2023-02-23
JPWO2023021952A5 JPWO2023021952A5 (https=) 2024-05-02
JP7678881B2 true JP7678881B2 (ja) 2025-05-16

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JP2023542300A Active JP7678881B2 (ja) 2021-08-16 2022-07-27 処理方法及び処理システム
JP2025076594A Pending JP2025105952A (ja) 2021-08-16 2025-05-02 処理方法及び処理システム

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JP2025076594A Pending JP2025105952A (ja) 2021-08-16 2025-05-02 処理方法及び処理システム

Country Status (4)

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JP (2) JP7678881B2 (https=)
KR (1) KR20240043781A (https=)
TW (1) TW202314842A (https=)
WO (1) WO2023021952A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116364636B (zh) * 2023-05-31 2023-07-28 广东鸿浩半导体设备有限公司 一种基于红外成像辅助的激光解键合方法
WO2026079048A1 (ja) * 2024-10-09 2026-04-16 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111606A (ja) 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ウェーハの加工方法
JP2020155493A (ja) 2019-03-18 2020-09-24 キオクシア株式会社 半導体装置の製造方法および半導体装置
WO2021010287A1 (ja) 2019-07-18 2021-01-21 東京エレクトロン株式会社 処理装置及び処理方法
WO2021131711A1 (ja) 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021103725A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
KR20260047323A (ko) 2018-03-14 2026-04-07 도쿄엘렉트론가부시키가이샤 기판 가공 장치 및 기판 가공 방법
JP2021068869A (ja) * 2019-10-28 2021-04-30 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111606A (ja) 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ウェーハの加工方法
JP2020155493A (ja) 2019-03-18 2020-09-24 キオクシア株式会社 半導体装置の製造方法および半導体装置
WO2021010287A1 (ja) 2019-07-18 2021-01-21 東京エレクトロン株式会社 処理装置及び処理方法
JP2021103725A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム
WO2021131711A1 (ja) 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
TW202314842A (zh) 2023-04-01
JP2025105952A (ja) 2025-07-10
JPWO2023021952A1 (https=) 2023-02-23
KR20240043781A (ko) 2024-04-03
WO2023021952A1 (ja) 2023-02-23

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