JP7671918B1 - 半導体製造装置用部材 - Google Patents

半導体製造装置用部材 Download PDF

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Publication number
JP7671918B1
JP7671918B1 JP2024510644A JP2024510644A JP7671918B1 JP 7671918 B1 JP7671918 B1 JP 7671918B1 JP 2024510644 A JP2024510644 A JP 2024510644A JP 2024510644 A JP2024510644 A JP 2024510644A JP 7671918 B1 JP7671918 B1 JP 7671918B1
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Japan
Prior art keywords
mounting surface
wafer
focus ring
semiconductor manufacturing
manufacturing equipment
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JP2024510644A
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English (en)
Japanese (ja)
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JPWO2025041221A5 (https=
JPWO2025041221A1 (https=
Inventor
達也 久野
靖也 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
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Publication date
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Publication of JPWO2025041221A1 publication Critical patent/JPWO2025041221A1/ja
Application granted granted Critical
Publication of JP7671918B1 publication Critical patent/JP7671918B1/ja
Publication of JPWO2025041221A5 publication Critical patent/JPWO2025041221A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2024510644A 2023-08-21 2023-08-21 半導体製造装置用部材 Active JP7671918B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/029982 WO2025041221A1 (ja) 2023-08-21 2023-08-21 半導体製造装置用部材

Publications (3)

Publication Number Publication Date
JPWO2025041221A1 JPWO2025041221A1 (https=) 2025-02-27
JP7671918B1 true JP7671918B1 (ja) 2025-05-02
JPWO2025041221A5 JPWO2025041221A5 (https=) 2025-07-30

Family

ID=94689171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024510644A Active JP7671918B1 (ja) 2023-08-21 2023-08-21 半導体製造装置用部材

Country Status (6)

Country Link
US (2) US12463023B2 (https=)
JP (1) JP7671918B1 (https=)
KR (2) KR102934502B1 (https=)
CN (1) CN121753530A (https=)
TW (1) TW202510091A (https=)
WO (1) WO2025041221A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106316A (ja) * 1993-10-04 1995-04-21 Tokyo Electron Ltd プラズマ処理装置
JP2000173988A (ja) * 1998-12-01 2000-06-23 Sumitomo Metal Ind Ltd 基板保持台、及びプラズマ処理装置
JP2002093894A (ja) * 2000-06-19 2002-03-29 Applied Materials Inc セラミック基体支持体
JP2009152232A (ja) * 2007-12-18 2009-07-09 Mitsubishi Materials Corp ウエハを支持するためのプラズマエッチング装置用複合シリコンリング
JP2013512564A (ja) * 2009-11-30 2013-04-11 ラム リサーチ コーポレーション 傾斜側壁を備える静電チャック
JP2016195108A (ja) * 2015-03-31 2016-11-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜した閉じ込めリングを有するプラズマ処理システム及びプラズマ処理構造
JP2016207979A (ja) * 2015-04-28 2016-12-08 日本特殊陶業株式会社 静電チャック
JP2018107433A (ja) * 2016-12-27 2018-07-05 東京エレクトロン株式会社 フォーカスリング及び基板処理装置
JP2019169699A (ja) * 2018-03-22 2019-10-03 Ｓｐｐテクノロジーズ株式会社 フォーカスリング及びこれを備えたプラズマ処理装置
JP2023027641A (ja) * 2021-08-17 2023-03-02 日本碍子株式会社 ウエハ載置台

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US20180182635A1 (en) 2016-12-27 2018-06-28 Tokyo Electron Limited Focus ring and substrate processing apparatus
JP2024516149A (ja) * 2021-04-21 2024-04-12 ラム リサーチ コーポレーション 基板への裏面堆積防止
KR102904705B1 (ko) * 2021-11-09 2025-12-29 삼성전자주식회사 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106316A (ja) * 1993-10-04 1995-04-21 Tokyo Electron Ltd プラズマ処理装置
JP2000173988A (ja) * 1998-12-01 2000-06-23 Sumitomo Metal Ind Ltd 基板保持台、及びプラズマ処理装置
JP2002093894A (ja) * 2000-06-19 2002-03-29 Applied Materials Inc セラミック基体支持体
JP2009152232A (ja) * 2007-12-18 2009-07-09 Mitsubishi Materials Corp ウエハを支持するためのプラズマエッチング装置用複合シリコンリング
JP2013512564A (ja) * 2009-11-30 2013-04-11 ラム リサーチ コーポレーション 傾斜側壁を備える静電チャック
JP2016195108A (ja) * 2015-03-31 2016-11-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜した閉じ込めリングを有するプラズマ処理システム及びプラズマ処理構造
JP2016207979A (ja) * 2015-04-28 2016-12-08 日本特殊陶業株式会社 静電チャック
JP2018107433A (ja) * 2016-12-27 2018-07-05 東京エレクトロン株式会社 フォーカスリング及び基板処理装置
JP2019169699A (ja) * 2018-03-22 2019-10-03 Ｓｐｐテクノロジーズ株式会社 フォーカスリング及びこれを備えたプラズマ処理装置
JP2023027641A (ja) * 2021-08-17 2023-03-02 日本碍子株式会社 ウエハ載置台

Also Published As

Publication number Publication date
US12463023B2 (en) 2025-11-04
JPWO2025041221A1 (https=) 2025-02-27
KR20250029010A (ko) 2025-03-04
US20250069865A1 (en) 2025-02-27
CN121753530A (zh) 2026-03-27
US20260018393A1 (en) 2026-01-15
WO2025041221A1 (ja) 2025-02-27
KR102934502B1 (ko) 2026-03-06
KR20260038955A (ko) 2026-03-19
TW202510091A (zh) 2025-03-01

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