CN121753530A - 半导体制造装置用部件 - Google Patents

半导体制造装置用部件

Info

Publication number
CN121753530A
CN121753530A CN202380012896.2A CN202380012896A CN121753530A CN 121753530 A CN121753530 A CN 121753530A CN 202380012896 A CN202380012896 A CN 202380012896A CN 121753530 A CN121753530 A CN 121753530A
Authority
CN
China
Prior art keywords
mounting surface
wafer
semiconductor manufacturing
focus ring
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380012896.2A
Other languages
English (en)
Chinese (zh)
Inventor
久野达也
井上靖也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN121753530A publication Critical patent/CN121753530A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN202380012896.2A 2023-08-21 2023-08-21 半导体制造装置用部件 Pending CN121753530A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/029982 WO2025041221A1 (ja) 2023-08-21 2023-08-21 半導体製造装置用部材

Publications (1)

Publication Number Publication Date
CN121753530A true CN121753530A (zh) 2026-03-27

Family

ID=94689171

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380012896.2A Pending CN121753530A (zh) 2023-08-21 2023-08-21 半导体制造装置用部件

Country Status (6)

Country Link
US (2) US12463023B2 (https=)
JP (1) JP7671918B1 (https=)
KR (2) KR102934502B1 (https=)
CN (1) CN121753530A (https=)
TW (1) TW202510091A (https=)
WO (1) WO2025041221A1 (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
JP4119551B2 (ja) * 1998-12-01 2008-07-16 東京エレクトロン株式会社 基板保持台、及びプラズマ処理装置
US6494955B1 (en) * 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP5088483B2 (ja) * 2007-12-18 2012-12-05 三菱マテリアル株式会社 ウエハを支持するためのプラズマエッチング装置用複合シリコンリング
WO2011065965A2 (en) * 2009-11-30 2011-06-03 Lam Research Corporation An electrostatic chuck with an angled sidewall
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
JP6530228B2 (ja) * 2015-04-28 2019-06-12 日本特殊陶業株式会社 静電チャック
JP2018107433A (ja) * 2016-12-27 2018-07-05 東京エレクトロン株式会社 フォーカスリング及び基板処理装置
US20180182635A1 (en) 2016-12-27 2018-06-28 Tokyo Electron Limited Focus ring and substrate processing apparatus
JP7071908B2 (ja) * 2018-03-22 2022-05-19 Sppテクノロジーズ株式会社 フォーカスリング及びこれを備えたプラズマ処理装置
JP2024516149A (ja) * 2021-04-21 2024-04-12 ラム リサーチ コーポレーション 基板への裏面堆積防止
JP7429208B2 (ja) 2021-08-17 2024-02-07 日本碍子株式会社 ウエハ載置台
KR102904705B1 (ko) * 2021-11-09 2025-12-29 삼성전자주식회사 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법

Also Published As

Publication number Publication date
US12463023B2 (en) 2025-11-04
JPWO2025041221A1 (https=) 2025-02-27
JP7671918B1 (ja) 2025-05-02
KR20250029010A (ko) 2025-03-04
US20250069865A1 (en) 2025-02-27
US20260018393A1 (en) 2026-01-15
WO2025041221A1 (ja) 2025-02-27
KR102934502B1 (ko) 2026-03-06
KR20260038955A (ko) 2026-03-19
TW202510091A (zh) 2025-03-01

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