JP7668471B2 - 縮合環化合物、半導体材料および電子デバイス - Google Patents

縮合環化合物、半導体材料および電子デバイス Download PDF

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JP7668471B2
JP7668471B2 JP2023539690A JP2023539690A JP7668471B2 JP 7668471 B2 JP7668471 B2 JP 7668471B2 JP 2023539690 A JP2023539690 A JP 2023539690A JP 2023539690 A JP2023539690 A JP 2023539690A JP 7668471 B2 JP7668471 B2 JP 7668471B2
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fused ring
compound
ring compound
fused
formula
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JPWO2023013273A1 (cg-RX-API-DMAC7.html
JPWO2023013273A5 (cg-RX-API-DMAC7.html
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達人 安藤
敬祐 林
伸行 松澤
宏行 前嶋
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/625—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing at least one aromatic ring having 7 or more carbon atoms, e.g. azulene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C15/00—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
    • C07C15/20—Polycyclic condensed hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/02—Ortho- or ortho- and peri-condensed systems
    • C07C2603/54—Ortho- or ortho- and peri-condensed systems containing more than five condensed rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
JP2023539690A 2021-08-05 2022-06-22 縮合環化合物、半導体材料および電子デバイス Active JP7668471B2 (ja)

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JP2021128935 2021-08-05
JP2021128935 2021-08-05
PCT/JP2022/024968 WO2023013273A1 (ja) 2021-08-05 2022-06-22 縮合環化合物、半導体材料および電子デバイス

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JP7668471B2 true JP7668471B2 (ja) 2025-04-25

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015178491A (ja) 2014-02-27 2015-10-08 株式会社Adeka ピセノジチオフェン化合物、有機半導体材料、有機半導体層、有機半導体素子
WO2016084731A1 (ja) 2014-11-25 2016-06-02 富士フイルム株式会社 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、化合物、並びに、有機半導体膜
JP2016134474A (ja) 2015-01-19 2016-07-25 富士フイルム株式会社 有機薄膜トランジスタ及びその製造方法
JP2019029657A (ja) 2017-07-27 2019-02-21 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタ及びその製造方法並びに電子素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015178491A (ja) 2014-02-27 2015-10-08 株式会社Adeka ピセノジチオフェン化合物、有機半導体材料、有機半導体層、有機半導体素子
WO2016084731A1 (ja) 2014-11-25 2016-06-02 富士フイルム株式会社 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、化合物、並びに、有機半導体膜
JP2016134474A (ja) 2015-01-19 2016-07-25 富士フイルム株式会社 有機薄膜トランジスタ及びその製造方法
JP2019029657A (ja) 2017-07-27 2019-02-21 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタ及びその製造方法並びに電子素子

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
AJAYAKUMAR, M. R. et al.，Tailoring Magnetic Features in Zigzag-Edged Nanographenes by Controlled Diels-Alder Reactions，Chemistry - A European Journal，2020年，Vol.26, No.33，p.7497-7503
JANCARIK, A. et al.，Synthesis and Absorption Properties of Long Acenoacenes，Chemistry - A European Journal，2021年07月20日，Vol.27, No.48，p.12388-12394
STNext File REGISTRY [online]，[retrieved on 2022.08.24]
YANG, Y. et al.，Nature of ground and electronic excited states of higher acenes，PNAS，2016年，Vol.113, No.35，p.E5098-E5107
ZUZAK, R. et al.，Higher Acenes by On-Surface Dehydrogenation: From Heptacene to Undecacene，Angewandte Chemie, International Edition，2018年，Vol.57, No.33，p.10500-10505，(Supporting Information p.S1-S23を含む。)
ZUZAK, R. et al.，On-Surface Synthesis and Intermolecular Cycloadditions of Indacenoditetracenes, Antiaromatic Analogues of Undecacene，ACS Nano，2020年12月21日，Vol.15, No.1，p.1548-1554

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WO2023013273A1 (ja) 2023-02-09
CN117794888A (zh) 2024-03-29
US20240415011A1 (en) 2024-12-12

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