JP7635848B2 - 複合電子部品 - Google Patents

複合電子部品 Download PDF

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Publication number
JP7635848B2
JP7635848B2 JP2023545488A JP2023545488A JP7635848B2 JP 7635848 B2 JP7635848 B2 JP 7635848B2 JP 2023545488 A JP2023545488 A JP 2023545488A JP 2023545488 A JP2023545488 A JP 2023545488A JP 7635848 B2 JP7635848 B2 JP 7635848B2
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JP
Japan
Prior art keywords
electronic component
circuit layer
ceramic
ceramic electronic
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023545488A
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English (en)
Japanese (ja)
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JPWO2023032774A1 (https=
JPWO2023032774A5 (https=
Inventor
幸宏 藤田
龍太郎 大和
達弥 舟木
祥明 佐竹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2023032774A1 publication Critical patent/JPWO2023032774A1/ja
Publication of JPWO2023032774A5 publication Critical patent/JPWO2023032774A5/ja
Application granted granted Critical
Publication of JP7635848B2 publication Critical patent/JP7635848B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Capacitors (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2023545488A 2021-08-31 2022-08-24 複合電子部品 Active JP7635848B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021140762 2021-08-31
JP2021140762 2021-08-31
PCT/JP2022/031824 WO2023032774A1 (ja) 2021-08-31 2022-08-24 複合電子部品

Publications (3)

Publication Number Publication Date
JPWO2023032774A1 JPWO2023032774A1 (https=) 2023-03-09
JPWO2023032774A5 JPWO2023032774A5 (https=) 2024-03-07
JP7635848B2 true JP7635848B2 (ja) 2025-02-26

Family

ID=85412539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545488A Active JP7635848B2 (ja) 2021-08-31 2022-08-24 複合電子部品

Country Status (3)

Country Link
US (1) US20240234389A9 (https=)
JP (1) JP7635848B2 (https=)
WO (1) WO2023032774A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118198A (ja) 2000-10-10 2002-04-19 Toshiba Corp 半導体装置
JP2004304159A (ja) 2003-03-19 2004-10-28 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
JP2005064169A (ja) 2003-08-11 2005-03-10 Ngk Spark Plug Co Ltd 中継基板付きパッケージ、半導体付き中継基板、半導体素子と中継基板とパッケージとからなる構造体、および中継基板付きパッケージの製造方法
JP2007067370A (ja) 2005-08-05 2007-03-15 Ngk Spark Plug Co Ltd 配線基板及びその製造方法、埋め込み用セラミックチップ
JP2010027899A (ja) 2008-07-22 2010-02-04 Murata Mfg Co Ltd 積層セラミック電子部品およびその製造方法
JP2012151154A (ja) 2011-01-14 2012-08-09 Ngk Spark Plug Co Ltd 部品内蔵配線基板の製造方法
JP2018107370A (ja) 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
WO2019130746A1 (ja) 2017-12-27 2019-07-04 株式会社村田製作所 半導体複合装置およびそれに用いられるパッケージ基板
US20200051956A1 (en) 2018-08-09 2020-02-13 Intel Corporation Fine pitch z connections for flip chip memory architectures with interposer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6868455B2 (ja) * 2016-06-02 2021-05-12 パナソニック株式会社 電子部品パッケージおよびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118198A (ja) 2000-10-10 2002-04-19 Toshiba Corp 半導体装置
JP2004304159A (ja) 2003-03-19 2004-10-28 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
JP2005064169A (ja) 2003-08-11 2005-03-10 Ngk Spark Plug Co Ltd 中継基板付きパッケージ、半導体付き中継基板、半導体素子と中継基板とパッケージとからなる構造体、および中継基板付きパッケージの製造方法
JP2007067370A (ja) 2005-08-05 2007-03-15 Ngk Spark Plug Co Ltd 配線基板及びその製造方法、埋め込み用セラミックチップ
JP2010027899A (ja) 2008-07-22 2010-02-04 Murata Mfg Co Ltd 積層セラミック電子部品およびその製造方法
JP2012151154A (ja) 2011-01-14 2012-08-09 Ngk Spark Plug Co Ltd 部品内蔵配線基板の製造方法
JP2018107370A (ja) 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
WO2019130746A1 (ja) 2017-12-27 2019-07-04 株式会社村田製作所 半導体複合装置およびそれに用いられるパッケージ基板
US20200051956A1 (en) 2018-08-09 2020-02-13 Intel Corporation Fine pitch z connections for flip chip memory architectures with interposer

Also Published As

Publication number Publication date
JPWO2023032774A1 (https=) 2023-03-09
WO2023032774A1 (ja) 2023-03-09
US20240136342A1 (en) 2024-04-25
US20240234389A9 (en) 2024-07-11

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