JPWO2023032774A1 - - Google Patents

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Publication number
JPWO2023032774A1
JPWO2023032774A1 JP2023545488A JP2023545488A JPWO2023032774A1 JP WO2023032774 A1 JPWO2023032774 A1 JP WO2023032774A1 JP 2023545488 A JP2023545488 A JP 2023545488A JP 2023545488 A JP2023545488 A JP 2023545488A JP WO2023032774 A1 JPWO2023032774 A1 JP WO2023032774A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023545488A
Other languages
Japanese (ja)
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JP7635848B2 (ja
JPWO2023032774A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of JPWO2023032774A1 publication Critical patent/JPWO2023032774A1/ja
Publication of JPWO2023032774A5 publication Critical patent/JPWO2023032774A5/ja
Application granted granted Critical
Publication of JP7635848B2 publication Critical patent/JP7635848B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Capacitors (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2023545488A 2021-08-31 2022-08-24 複合電子部品 Active JP7635848B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021140762 2021-08-31
JP2021140762 2021-08-31
PCT/JP2022/031824 WO2023032774A1 (ja) 2021-08-31 2022-08-24 複合電子部品

Publications (3)

Publication Number Publication Date
JPWO2023032774A1 true JPWO2023032774A1 (https=) 2023-03-09
JPWO2023032774A5 JPWO2023032774A5 (https=) 2024-03-07
JP7635848B2 JP7635848B2 (ja) 2025-02-26

Family

ID=85412539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545488A Active JP7635848B2 (ja) 2021-08-31 2022-08-24 複合電子部品

Country Status (3)

Country Link
US (1) US20240234389A9 (https=)
JP (1) JP7635848B2 (https=)
WO (1) WO2023032774A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118198A (ja) * 2000-10-10 2002-04-19 Toshiba Corp 半導体装置
JP2004304159A (ja) * 2003-03-19 2004-10-28 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
JP2005064169A (ja) * 2003-08-11 2005-03-10 Ngk Spark Plug Co Ltd 中継基板付きパッケージ、半導体付き中継基板、半導体素子と中継基板とパッケージとからなる構造体、および中継基板付きパッケージの製造方法
JP2007067370A (ja) * 2005-08-05 2007-03-15 Ngk Spark Plug Co Ltd 配線基板及びその製造方法、埋め込み用セラミックチップ
JP2010027899A (ja) * 2008-07-22 2010-02-04 Murata Mfg Co Ltd 積層セラミック電子部品およびその製造方法
JP2012151154A (ja) * 2011-01-14 2012-08-09 Ngk Spark Plug Co Ltd 部品内蔵配線基板の製造方法
JP2018107370A (ja) * 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
WO2019130746A1 (ja) * 2017-12-27 2019-07-04 株式会社村田製作所 半導体複合装置およびそれに用いられるパッケージ基板
US20200051956A1 (en) * 2018-08-09 2020-02-13 Intel Corporation Fine pitch z connections for flip chip memory architectures with interposer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6868455B2 (ja) * 2016-06-02 2021-05-12 パナソニック株式会社 電子部品パッケージおよびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118198A (ja) * 2000-10-10 2002-04-19 Toshiba Corp 半導体装置
JP2004304159A (ja) * 2003-03-19 2004-10-28 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
JP2005064169A (ja) * 2003-08-11 2005-03-10 Ngk Spark Plug Co Ltd 中継基板付きパッケージ、半導体付き中継基板、半導体素子と中継基板とパッケージとからなる構造体、および中継基板付きパッケージの製造方法
JP2007067370A (ja) * 2005-08-05 2007-03-15 Ngk Spark Plug Co Ltd 配線基板及びその製造方法、埋め込み用セラミックチップ
JP2010027899A (ja) * 2008-07-22 2010-02-04 Murata Mfg Co Ltd 積層セラミック電子部品およびその製造方法
JP2012151154A (ja) * 2011-01-14 2012-08-09 Ngk Spark Plug Co Ltd 部品内蔵配線基板の製造方法
JP2018107370A (ja) * 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
WO2019130746A1 (ja) * 2017-12-27 2019-07-04 株式会社村田製作所 半導体複合装置およびそれに用いられるパッケージ基板
US20200051956A1 (en) * 2018-08-09 2020-02-13 Intel Corporation Fine pitch z connections for flip chip memory architectures with interposer

Also Published As

Publication number Publication date
WO2023032774A1 (ja) 2023-03-09
JP7635848B2 (ja) 2025-02-26
US20240136342A1 (en) 2024-04-25
US20240234389A9 (en) 2024-07-11

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