JP7633273B2 - 反射要素を有する発光ダイオードチップ構造 - Google Patents

反射要素を有する発光ダイオードチップ構造 Download PDF

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JP7633273B2
JP7633273B2 JP2022560438A JP2022560438A JP7633273B2 JP 7633273 B2 JP7633273 B2 JP 7633273B2 JP 2022560438 A JP2022560438 A JP 2022560438A JP 2022560438 A JP2022560438 A JP 2022560438A JP 7633273 B2 JP7633273 B2 JP 7633273B2
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led chip
chip structure
isolation portion
mesa
layer
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JP2023525649A5 (https=
JPWO2021216689A5 (https=
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リ，キミン
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ジェイド バード ディスプレイ（シャンハイ） リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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JP2022560438A 2020-04-21 2021-04-21 反射要素を有する発光ダイオードチップ構造 Active JP7633273B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063013370P 2020-04-21 2020-04-21
US63/013,370 2020-04-21
PCT/US2021/028371 WO2021216689A1 (en) 2020-04-21 2021-04-21 Light-emitting diode chip structures with reflective elements

Publications (4)

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JP2023525649A JP2023525649A (ja) 2023-06-19
JP2023525649A5 JP2023525649A5 (https=) 2024-02-09
JPWO2021216689A5 JPWO2021216689A5 (https=) 2024-02-09
JP7633273B2 true JP7633273B2 (ja) 2025-02-19

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US (1) US11811005B2 (https=)
EP (1) EP4139957A4 (https=)
JP (1) JP7633273B2 (https=)
KR (1) KR20230003505A (https=)
CN (1) CN115413371B (https=)
AU (1) AU2021259592A1 (https=)
DE (1) DE21792668T1 (https=)
TW (1) TWI893105B (https=)
WO (1) WO2021216689A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023142144A1 (en) * 2022-01-31 2023-08-03 Jade Bird Display (Shanghai) Company Micro led structure and micro display panel
EP4473580A1 (en) * 2022-01-31 2024-12-11 Jade Bird Display (Shanghai) Limited Micro led structure and micro display panel
JP2025508511A (ja) * 2022-03-03 2025-03-26 ジェイド バード ディスプレイ（シャンハイ） リミテッド マイクロｌｅｄ、マイクロｌｅｄパネルおよびマイクロｌｅｄチップ
WO2024207420A1 (en) * 2023-04-07 2024-10-10 Jade Bird Display (shanghai) Limited Micro led pixel and micro led panel
TWI895124B (zh) * 2024-09-26 2025-08-21 友達光電股份有限公司 顯示裝置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110297914A1 (en) 2010-06-07 2011-12-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof
JP2012028749A (ja) 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
JP2012174810A (ja) 2011-02-18 2012-09-10 Fuji Xerox Co Ltd 発光部品、プリントヘッドおよび画像形成装置
JP2014216588A (ja) 2013-04-30 2014-11-17 株式会社沖データ 発光装置、その製造方法、画像表示装置、及び画像形成装置
US20150333221A1 (en) 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
JP2016503958A (ja) 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション 発光素子反射バンク構造
WO2016129658A1 (ja) 2015-02-13 2016-08-18 シチズン電子株式会社 発光装置及びその製造方法
US20170062674A1 (en) 2015-08-31 2017-03-02 Samsung Display Co., Ltd. Display apparatus and manufacturing method thereof
US20170133357A1 (en) 2015-11-05 2017-05-11 Innolux Corporation Display device
WO2018057974A1 (en) 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro display panels with integrated micro-reflectors
WO2019038961A1 (ja) 2017-08-25 2019-02-28 シャープ株式会社 マイクロｌｅｄ素子、画像表示素子、及び製造方法
US20190198709A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
EP1850378A3 (en) 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
TW200834962A (en) 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
EP2375452A1 (en) 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Nanoparticle antireflection layer
US20110284887A1 (en) 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
KR101969308B1 (ko) * 2012-10-26 2019-04-17 삼성전자주식회사 반도체 발광소자 및 그 제조 방법
TWI467528B (zh) 2013-10-30 2015-01-01 友達光電股份有限公司 發光二極體顯示面板及其製作方法
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
WO2016043113A1 (ja) * 2014-09-16 2016-03-24 シャープ株式会社 有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンス装置の製造方法
CN205282507U (zh) * 2015-11-25 2016-06-01 博罗承创精密工业有限公司 多段多角度发光式led支架
US10068888B2 (en) * 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
EP3698415A1 (en) * 2017-10-19 2020-08-26 Lumileds LLC Light emitting device package
JP7105612B2 (ja) * 2018-05-21 2022-07-25 シャープ株式会社 画像表示素子およびその形成方法
KR102652645B1 (ko) 2018-09-03 2024-04-02 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
TWI851085B (zh) * 2018-09-27 2024-08-01 美商亮銳公司 於圖案化模板及基板上之微米級發光二極體顯示器
KR102852286B1 (ko) 2019-09-24 2025-08-28 삼성전자주식회사 디스플레이 장치
US11817435B2 (en) * 2019-10-28 2023-11-14 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110297914A1 (en) 2010-06-07 2011-12-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof
JP2012028749A (ja) 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
JP2012174810A (ja) 2011-02-18 2012-09-10 Fuji Xerox Co Ltd 発光部品、プリントヘッドおよび画像形成装置
JP2016503958A (ja) 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション 発光素子反射バンク構造
JP2014216588A (ja) 2013-04-30 2014-11-17 株式会社沖データ 発光装置、その製造方法、画像表示装置、及び画像形成装置
US20150333221A1 (en) 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
WO2016129658A1 (ja) 2015-02-13 2016-08-18 シチズン電子株式会社 発光装置及びその製造方法
US20170062674A1 (en) 2015-08-31 2017-03-02 Samsung Display Co., Ltd. Display apparatus and manufacturing method thereof
US20170133357A1 (en) 2015-11-05 2017-05-11 Innolux Corporation Display device
WO2018057974A1 (en) 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro display panels with integrated micro-reflectors
US20180090058A1 (en) 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro Display Panels With Integrated Micro-Reflectors
WO2019038961A1 (ja) 2017-08-25 2019-02-28 シャープ株式会社 マイクロｌｅｄ素子、画像表示素子、及び製造方法
US20190198709A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions

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Publication number Publication date
US20210328108A1 (en) 2021-10-21
EP4139957A1 (en) 2023-03-01
WO2021216689A1 (en) 2021-10-28
TWI893105B (zh) 2025-08-11
DE21792668T1 (de) 2023-06-22
AU2021259592A1 (en) 2022-12-08
EP4139957A4 (en) 2024-07-10
TW202201818A (zh) 2022-01-01
JP2023525649A (ja) 2023-06-19
CN115413371A (zh) 2022-11-29
US11811005B2 (en) 2023-11-07
CN115413371B (zh) 2026-04-24
KR20230003505A (ko) 2023-01-06

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