TWI893105B - 具反射元件之發光二極體晶片結構 - Google Patents

具反射元件之發光二極體晶片結構

Info

Publication number
TWI893105B
TWI893105B TW110114257A TW110114257A TWI893105B TW I893105 B TWI893105 B TW I893105B TW 110114257 A TW110114257 A TW 110114257A TW 110114257 A TW110114257 A TW 110114257A TW I893105 B TWI893105 B TW I893105B
Authority
TW
Taiwan
Prior art keywords
isolation portion
chip structure
light
emitting diode
mesa
Prior art date
Application number
TW110114257A
Other languages
English (en)
Chinese (zh)
Other versions
TW202201818A (zh
Inventor
李起鳴
Original Assignee
中國大陸商上海顯耀顯示科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中國大陸商上海顯耀顯示科技有限公司 filed Critical 中國大陸商上海顯耀顯示科技有限公司
Publication of TW202201818A publication Critical patent/TW202201818A/zh
Application granted granted Critical
Publication of TWI893105B publication Critical patent/TWI893105B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
TW110114257A 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構 TWI893105B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063013370P 2020-04-21 2020-04-21
US63/013,370 2020-04-21

Publications (2)

Publication Number Publication Date
TW202201818A TW202201818A (zh) 2022-01-01
TWI893105B true TWI893105B (zh) 2025-08-11

Family

ID=78082770

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110114257A TWI893105B (zh) 2020-04-21 2021-04-21 具反射元件之發光二極體晶片結構

Country Status (9)

Country Link
US (1) US11811005B2 (https=)
EP (1) EP4139957A4 (https=)
JP (1) JP7633273B2 (https=)
KR (1) KR20230003505A (https=)
CN (1) CN115413371B (https=)
AU (1) AU2021259592A1 (https=)
DE (1) DE21792668T1 (https=)
TW (1) TWI893105B (https=)
WO (1) WO2021216689A1 (https=)

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* Cited by examiner, † Cited by third party
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WO2023142144A1 (en) * 2022-01-31 2023-08-03 Jade Bird Display (Shanghai) Company Micro led structure and micro display panel
EP4473580A1 (en) * 2022-01-31 2024-12-11 Jade Bird Display (Shanghai) Limited Micro led structure and micro display panel
JP2025508511A (ja) * 2022-03-03 2025-03-26 ジェイド バード ディスプレイ（シャンハイ） リミテッド マイクロｌｅｄ、マイクロｌｅｄパネルおよびマイクロｌｅｄチップ
WO2024207420A1 (en) * 2023-04-07 2024-10-10 Jade Bird Display (shanghai) Limited Micro led pixel and micro led panel
TWI895124B (zh) * 2024-09-26 2025-08-21 友達光電股份有限公司 顯示裝置

Citations (8)

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US20150333221A1 (en) * 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US20170133357A1 (en) * 2015-11-05 2017-05-11 Innolux Corporation Display device
US20170179097A1 (en) * 2015-12-21 2017-06-22 Hong Kong Beida Jade Bird Display Limited Making Semiconductor Devices with Alignment Bonding and Substrate Removal
US20180090058A1 (en) * 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro Display Panels With Integrated Micro-Reflectors
TW201924094A (zh) * 2017-10-19 2019-06-16 美商亮銳公司 發光元件封裝
US20190198709A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions
WO2020069467A1 (en) * 2018-09-27 2020-04-02 Lumileds Holding B.V. Micro light emitting devices

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US20110284887A1 (en) 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
JP2012028749A (ja) 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
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US20110297914A1 (en) * 2010-06-07 2011-12-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof
US20150333221A1 (en) * 2014-05-15 2015-11-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US20170133357A1 (en) * 2015-11-05 2017-05-11 Innolux Corporation Display device
US20170179097A1 (en) * 2015-12-21 2017-06-22 Hong Kong Beida Jade Bird Display Limited Making Semiconductor Devices with Alignment Bonding and Substrate Removal
US20180090058A1 (en) * 2016-09-23 2018-03-29 Hong Kong Beida Jade Bird Display Limited Micro Display Panels With Integrated Micro-Reflectors
TW201924094A (zh) * 2017-10-19 2019-06-16 美商亮銳公司 發光元件封裝
US20190198709A1 (en) * 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions
WO2020069467A1 (en) * 2018-09-27 2020-04-02 Lumileds Holding B.V. Micro light emitting devices

Also Published As

Publication number Publication date
US20210328108A1 (en) 2021-10-21
JP7633273B2 (ja) 2025-02-19
EP4139957A1 (en) 2023-03-01
WO2021216689A1 (en) 2021-10-28
DE21792668T1 (de) 2023-06-22
AU2021259592A1 (en) 2022-12-08
EP4139957A4 (en) 2024-07-10
TW202201818A (zh) 2022-01-01
JP2023525649A (ja) 2023-06-19
CN115413371A (zh) 2022-11-29
US11811005B2 (en) 2023-11-07
CN115413371B (zh) 2026-04-24
KR20230003505A (ko) 2023-01-06

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