CN115413371B - 具有反射元件的发光二极管芯片结构 - Google Patents

具有反射元件的发光二极管芯片结构

Info

Publication number
CN115413371B
CN115413371B CN202180029003.6A CN202180029003A CN115413371B CN 115413371 B CN115413371 B CN 115413371B CN 202180029003 A CN202180029003 A CN 202180029003A CN 115413371 B CN115413371 B CN 115413371B
Authority
CN
China
Prior art keywords
led chip
chip structure
mesa
spacer
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180029003.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN115413371A (zh
Inventor
李起鸣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Xianyao Display Technology Co ltd
Original Assignee
Shanghai Xianyao Display Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Xianyao Display Technology Co ltd filed Critical Shanghai Xianyao Display Technology Co ltd
Publication of CN115413371A publication Critical patent/CN115413371A/zh
Application granted granted Critical
Publication of CN115413371B publication Critical patent/CN115413371B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
CN202180029003.6A 2020-04-21 2021-04-21 具有反射元件的发光二极管芯片结构 Active CN115413371B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063013370P 2020-04-21 2020-04-21
US63/013,370 2020-04-21
PCT/US2021/028371 WO2021216689A1 (en) 2020-04-21 2021-04-21 Light-emitting diode chip structures with reflective elements

Publications (2)

Publication Number Publication Date
CN115413371A CN115413371A (zh) 2022-11-29
CN115413371B true CN115413371B (zh) 2026-04-24

Family

ID=78082770

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180029003.6A Active CN115413371B (zh) 2020-04-21 2021-04-21 具有反射元件的发光二极管芯片结构

Country Status (9)

Country Link
US (1) US11811005B2 (https=)
EP (1) EP4139957A4 (https=)
JP (1) JP7633273B2 (https=)
KR (1) KR20230003505A (https=)
CN (1) CN115413371B (https=)
AU (1) AU2021259592A1 (https=)
DE (1) DE21792668T1 (https=)
TW (1) TWI893105B (https=)
WO (1) WO2021216689A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023142144A1 (en) * 2022-01-31 2023-08-03 Jade Bird Display (Shanghai) Company Micro led structure and micro display panel
EP4473580A1 (en) * 2022-01-31 2024-12-11 Jade Bird Display (Shanghai) Limited Micro led structure and micro display panel
JP2025508511A (ja) * 2022-03-03 2025-03-26 ジェイド バード ディスプレイ（シャンハイ） リミテッド マイクロｌｅｄ、マイクロｌｅｄパネルおよびマイクロｌｅｄチップ
WO2024207420A1 (en) * 2023-04-07 2024-10-10 Jade Bird Display (shanghai) Limited Micro led pixel and micro led panel
TWI895124B (zh) * 2024-09-26 2025-08-21 友達光電股份有限公司 顯示裝置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
EP1850378A3 (en) 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
TW200834962A (en) 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
EP2375452A1 (en) 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Nanoparticle antireflection layer
US20110284887A1 (en) 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
CN101872824A (zh) 2010-06-07 2010-10-27 厦门市三安光电科技有限公司 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法
JP2012028749A (ja) 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
JP2012174810A (ja) 2011-02-18 2012-09-10 Fuji Xerox Co Ltd 発光部品、プリントヘッドおよび画像形成装置
KR101969308B1 (ko) * 2012-10-26 2019-04-17 삼성전자주식회사 반도체 발광소자 및 그 제조 방법
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
JP2014216588A (ja) 2013-04-30 2014-11-17 株式会社沖データ 発光装置、その製造方法、画像表示装置、及び画像形成装置
TWI467528B (zh) 2013-10-30 2015-01-01 友達光電股份有限公司 發光二極體顯示面板及其製作方法
KR102285786B1 (ko) 2014-01-20 2021-08-04 삼성전자 주식회사 반도체 발광 소자
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
WO2016043113A1 (ja) * 2014-09-16 2016-03-24 シャープ株式会社 有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンス装置の製造方法
JP6606517B2 (ja) 2015-02-13 2019-11-13 シチズン電子株式会社 発光装置の製造方法
KR102465382B1 (ko) 2015-08-31 2022-11-10 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
US10304813B2 (en) 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
CN205282507U (zh) * 2015-11-25 2016-06-01 博罗承创精密工业有限公司 多段多角度发光式led支架
US10068888B2 (en) * 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal
US10304375B2 (en) * 2016-09-23 2019-05-28 Hong Kong Beida Jade Bird Display Limited Micro display panels with integrated micro-reflectors
CN111052412B (zh) 2017-08-25 2023-07-25 夏普株式会社 微型led元件、图像显示元件以及制造方法
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
EP3698415A1 (en) * 2017-10-19 2020-08-26 Lumileds LLC Light emitting device package
US10804429B2 (en) * 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication
JP7105612B2 (ja) * 2018-05-21 2022-07-25 シャープ株式会社 画像表示素子およびその形成方法
KR102652645B1 (ko) 2018-09-03 2024-04-02 삼성디스플레이 주식회사 발광 장치 및 이를 구비하는 표시 장치
TWI851085B (zh) * 2018-09-27 2024-08-01 美商亮銳公司 於圖案化模板及基板上之微米級發光二極體顯示器
KR102852286B1 (ko) 2019-09-24 2025-08-28 삼성전자주식회사 디스플레이 장치
US11817435B2 (en) * 2019-10-28 2023-11-14 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same

Also Published As

Publication number Publication date
US20210328108A1 (en) 2021-10-21
JP7633273B2 (ja) 2025-02-19
EP4139957A1 (en) 2023-03-01
WO2021216689A1 (en) 2021-10-28
TWI893105B (zh) 2025-08-11
DE21792668T1 (de) 2023-06-22
AU2021259592A1 (en) 2022-12-08
EP4139957A4 (en) 2024-07-10
TW202201818A (zh) 2022-01-01
JP2023525649A (ja) 2023-06-19
CN115413371A (zh) 2022-11-29
US11811005B2 (en) 2023-11-07
KR20230003505A (ko) 2023-01-06

Similar Documents

Publication Publication Date Title
TWI893104B (zh) 具反射元件之發光二極體晶片結構
CN115413371B (zh) 具有反射元件的发光二极管芯片结构
CN119604108B (zh) 用于多色led像素单元的系统和方法
CN106067462B (zh) 使用半导体发光器件的显示装置及其制造方法
KR20240149971A (ko) 동축 다색 led를 위한 시스템들 및 방법들
CN115843393A (zh) 用于具有水平发光的多色led像素单元的系统和方法
CN119967999A (zh) 用于具有竖向发光的多色led像素单元的系统和方法
JP2023542832A (ja) 一体型オフアクシスマイクロレンズアレイを備えるディスプレイパネル
WO2022014421A1 (ja) 発光装置および画像表示装置
JP2025527582A (ja) 発光効率を向上させる発光画素構造システム及びその製造方法
CN121286129A (zh) 多色微型led像素阵列
TWI918661B (zh) 用於具有水平光發射的多色ｌｅｄ像素單元的系統及方法
CN121336517A (zh) 具有非同轴堆叠led结构的多色微型led像素
CN121264193A (zh) 一种具有高反射率的单色微型led像素
CN121241693A (zh) 一种具有高反射率的单色微型led像素
CN121220221A (zh) 具有非同轴堆叠led结构的多色微型led像素
CN121220207A (zh) 具有非同轴堆叠led结构的多色微型led像素
CN121220205A (zh) 一种具有侧壁台阶的微型发光二极管结构
WO2017104547A1 (ja) 発光ユニットおよび表示装置
WO2023007823A1 (ja) 発光デバイスおよび画像表示装置
CN121400100A (zh) 一种高反射率多色微型led像素
CN114335393A (zh) 显示面板及电子设备

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Country or region after: China

Address after: 201306 Shanghai Pudong New Area China Free Trade Zone Lingang New Area Ocean Road 99, No. 11, 13 7th Floor

Applicant after: Shanghai Xianyao Display Technology Co., Ltd.

Address before: 201306 No. 1889, Hongyin Road, Pudong New Area, Shanghai

Applicant before: SHANGHAI XIANYAO DISPLAY TECHNOLOGY Co.,Ltd.

Country or region before: China

GR01 Patent grant