JP7620593B2 - ウエハ載置台 - Google Patents

ウエハ載置台 Download PDF

Info

Publication number
JP7620593B2
JP7620593B2 JP2022072511A JP2022072511A JP7620593B2 JP 7620593 B2 JP7620593 B2 JP 7620593B2 JP 2022072511 A JP2022072511 A JP 2022072511A JP 2022072511 A JP2022072511 A JP 2022072511A JP 7620593 B2 JP7620593 B2 JP 7620593B2
Authority
JP
Japan
Prior art keywords
power supply
supply terminal
wafer
flow path
refrigerant flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022072511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023161888A (ja
JP2023161888A5 (https=
Inventor
達也 久野
靖也 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2022072511A priority Critical patent/JP7620593B2/ja
Priority to CN202310007250.7A priority patent/CN116960043A/zh
Priority to US18/171,837 priority patent/US12211671B2/en
Priority to KR1020230025270A priority patent/KR102800130B1/ko
Priority to TW112109433A priority patent/TWI849797B/zh
Publication of JP2023161888A publication Critical patent/JP2023161888A/ja
Publication of JP2023161888A5 publication Critical patent/JP2023161888A5/ja
Application granted granted Critical
Publication of JP7620593B2 publication Critical patent/JP7620593B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2022072511A 2022-04-26 2022-04-26 ウエハ載置台 Active JP7620593B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022072511A JP7620593B2 (ja) 2022-04-26 2022-04-26 ウエハ載置台
CN202310007250.7A CN116960043A (zh) 2022-04-26 2023-01-04 晶片载放台
US18/171,837 US12211671B2 (en) 2022-04-26 2023-02-21 Wafer placement table
KR1020230025270A KR102800130B1 (ko) 2022-04-26 2023-02-24 웨이퍼 배치대
TW112109433A TWI849797B (zh) 2022-04-26 2023-03-15 晶圓載置台

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022072511A JP7620593B2 (ja) 2022-04-26 2022-04-26 ウエハ載置台

Publications (3)

Publication Number Publication Date
JP2023161888A JP2023161888A (ja) 2023-11-08
JP2023161888A5 JP2023161888A5 (https=) 2024-01-30
JP7620593B2 true JP7620593B2 (ja) 2025-01-23

Family

ID=88415788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022072511A Active JP7620593B2 (ja) 2022-04-26 2022-04-26 ウエハ載置台

Country Status (5)

Country Link
US (1) US12211671B2 (https=)
JP (1) JP7620593B2 (https=)
KR (1) KR102800130B1 (https=)
CN (1) CN116960043A (https=)
TW (1) TWI849797B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024241516A1 (ja) * 2023-05-24 2024-11-28 日本碍子株式会社 ウエハ載置台
WO2026053636A1 (ja) * 2024-09-03 2026-03-12 日本碍子株式会社 半導体製造装置用部材
JP7829111B1 (ja) * 2024-09-03 2026-03-12 日本碍子株式会社 半導体製造装置用部材
US20260100341A1 (en) * 2024-10-09 2026-04-09 Applied Materials, Inc. Sheath and Temperature Control of Process Kit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072478A (ja) 2014-09-30 2016-05-09 日本特殊陶業株式会社 静電チャック
JP2016143795A (ja) 2015-02-03 2016-08-08 日本特殊陶業株式会社 静電チャック
JP2020145238A (ja) 2019-03-04 2020-09-10 日本碍子株式会社 ウエハ載置装置
JP2020161597A (ja) 2019-03-26 2020-10-01 日本碍子株式会社 ウエハ載置装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297771B2 (ja) * 1993-11-05 2002-07-02 ソニー株式会社 半導体製造装置
US5883778A (en) 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US6072685A (en) 1998-05-22 2000-06-06 Applied Materials, Inc. Electrostatic chuck having an electrical connector with housing
JP5269335B2 (ja) * 2007-03-30 2013-08-21 東京エレクトロン株式会社 プラズマ処理装置
JP4898556B2 (ja) * 2007-05-23 2012-03-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6182082B2 (ja) * 2013-03-15 2017-08-16 日本碍子株式会社 緻密質複合材料、その製法及び半導体製造装置用部材
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
US10490435B2 (en) 2018-02-07 2019-11-26 Applied Materials, Inc. Cooling element for an electrostatic chuck assembly
KR102427974B1 (ko) * 2018-03-13 2022-08-02 엔지케이 인슐레이터 엘티디 웨이퍼 유지대
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
JP7313254B2 (ja) 2019-10-11 2023-07-24 日本特殊陶業株式会社 保持装置
JP7411383B2 (ja) * 2019-11-05 2024-01-11 日本特殊陶業株式会社 加熱装置
JP7676722B2 (ja) * 2021-08-19 2025-05-15 新光電気工業株式会社 ベースプレート、基板固定装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072478A (ja) 2014-09-30 2016-05-09 日本特殊陶業株式会社 静電チャック
JP2016143795A (ja) 2015-02-03 2016-08-08 日本特殊陶業株式会社 静電チャック
JP2020145238A (ja) 2019-03-04 2020-09-10 日本碍子株式会社 ウエハ載置装置
US20200286755A1 (en) 2019-03-04 2020-09-10 Ngk Insulators, Ltd. Wafer placement apparatus
JP2020161597A (ja) 2019-03-26 2020-10-01 日本碍子株式会社 ウエハ載置装置
US20200312684A1 (en) 2019-03-26 2020-10-01 Ngk Insulators, Ltd. Wafer placement apparatus

Also Published As

Publication number Publication date
KR20230151880A (ko) 2023-11-02
TW202403950A (zh) 2024-01-16
JP2023161888A (ja) 2023-11-08
KR102800130B1 (ko) 2025-04-23
CN116960043A (zh) 2023-10-27
TWI849797B (zh) 2024-07-21
US20230343565A1 (en) 2023-10-26
US12211671B2 (en) 2025-01-28

Similar Documents

Publication Publication Date Title
JP7620593B2 (ja) ウエハ載置台
JP7645996B2 (ja) ウエハ載置台
JP7514811B2 (ja) ウエハ載置台
CN116130324B (zh) 晶片载放台
JP7364822B1 (ja) ウエハ載置台
JP7583698B2 (ja) ウエハ載置台
TWI866070B (zh) 晶圓載置台
JP2025109922A (ja) ウエハ載置台
JP7572936B2 (ja) ウエハ載置台
JP7637227B2 (ja) ウエハ載置台
JP7623309B2 (ja) ウエハ載置台
JP7526349B2 (ja) ウエハ載置台
US20230144107A1 (en) Wafer placement table
JP7621458B2 (ja) ウエハ載置台
JP7606598B2 (ja) ウエハ載置台
JP7599451B2 (ja) ウエハ載置台
KR20260057603A (ko) 웨이퍼 배치대

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20241017

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241029

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241211

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250110

R150 Certificate of patent or registration of utility model

Ref document number: 7620593

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150