JP2020161597A - ウエハ載置装置 - Google Patents
ウエハ載置装置 Download PDFInfo
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- JP2020161597A JP2020161597A JP2019058284A JP2019058284A JP2020161597A JP 2020161597 A JP2020161597 A JP 2020161597A JP 2019058284 A JP2019058284 A JP 2019058284A JP 2019058284 A JP2019058284 A JP 2019058284A JP 2020161597 A JP2020161597 A JP 2020161597A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/016—Heaters using particular connecting means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
上面にウエハ載置面を有し、電極が内蔵されたセラミックプレートと、
前記セラミックプレートの前記ウエハ載置面とは反対側の下面に配置され、内部に冷媒流路が設けられた冷却プレートと、
を備え、
前記冷媒流路は、前記ウエハ載置面に平行になるように一筆書きの要領で設けられた第1流路と、前記第1流路に沿うように一筆書きの要領で設けられた第2流路と、を有し、前記第1流路の入口側に前記第2流路の出口があり、前記第1流路の出口側に前記第2流路の入口がある。
Claims (4)
- 上面にウエハ載置面を有し、電極が内蔵されたセラミックプレートと、
前記セラミックプレートの前記ウエハ載置面とは反対側の下面に配置され、内部に冷媒流路が設けられた冷却プレートと、
を備え、
前記冷媒流路は、前記ウエハ載置面に平行になるように一筆書きの要領で設けられた第1流路と、前記第1流路に沿うように一筆書きの要領で設けられた第2流路と、を有し、前記第1流路の入口側に前記第2流路の出口があり、前記第1流路の出口側に前記第2流路の入口がある、
ウエハ載置装置。 - 前記第1流路は入口と出口が近くにあり、前記第1流路の出入口の近傍では、前記第1流路のうちの入口側の流路と、前記第2流路のうちの出口側の流路と、前記第2流路のうちの入口側の流路と、前記第1流路のうちの出口側の流路とが、この順に隣合って設けられている、
請求項1に記載のウエハ載置装置。 - 前記第1流路及び前記第2流路は、渦巻状に形成されている、請求項1又は2に記載のウエハ載置装置。
- 前記第1流路及び前記第2流路は、外周部にある入口から中央部にある折り返し部まで渦巻状に形成され、前記折り返し部で折り返され、前記折り返し部から外周部にある出口まで渦巻状に形成されているか、中央部にある入口から外周部にある折り返し部まで渦巻状に形成され、前記折り返し部で折り返され、前記折り返し部から中央部にある出口まで渦巻状に形成されている、請求項1〜3のいずれか1項に記載のウエハ載置装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019058284A JP6918042B2 (ja) | 2019-03-26 | 2019-03-26 | ウエハ載置装置 |
US16/822,541 US11887873B2 (en) | 2019-03-26 | 2020-03-18 | Wafer placement apparatus |
KR1020200033733A KR102525397B1 (ko) | 2019-03-26 | 2020-03-19 | 웨이퍼 배치 장치 |
TW109109398A TWI749486B (zh) | 2019-03-26 | 2020-03-20 | 晶圓承載裝置 |
CN202010218460.7A CN111755375A (zh) | 2019-03-26 | 2020-03-25 | 晶片载置装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019058284A JP6918042B2 (ja) | 2019-03-26 | 2019-03-26 | ウエハ載置装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020161597A true JP2020161597A (ja) | 2020-10-01 |
JP6918042B2 JP6918042B2 (ja) | 2021-08-11 |
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JP2019058284A Active JP6918042B2 (ja) | 2019-03-26 | 2019-03-26 | ウエハ載置装置 |
Country Status (5)
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US (1) | US11887873B2 (ja) |
JP (1) | JP6918042B2 (ja) |
KR (1) | KR102525397B1 (ja) |
CN (1) | CN111755375A (ja) |
TW (1) | TWI749486B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023166866A1 (ja) * | 2022-03-01 | 2023-09-07 | 日本碍子株式会社 | ウエハ載置台 |
KR20230140386A (ko) | 2022-03-29 | 2023-10-06 | 토토 가부시키가이샤 | 정전 척 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102188261B1 (ko) * | 2019-08-02 | 2020-12-09 | 세미기어, 인코포레이션 | 기판 냉각 장치 및 방법 |
KR20210089375A (ko) * | 2020-01-08 | 2021-07-16 | 주식회사 미코세라믹스 | 정전척 |
TWI755996B (zh) * | 2020-12-24 | 2022-02-21 | 天虹科技股份有限公司 | 用以產生均勻溫度的晶圓承載盤及應用該晶圓承載盤的薄膜沉積裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332518A (ja) * | 2005-05-30 | 2006-12-07 | Nikon Corp | 静電チャックおよび露光装置 |
JP2013051422A (ja) * | 2007-07-11 | 2013-03-14 | Semes Co Ltd | プレート、これを有する基板温度調節装置及びこれを有する基板処理装置。 |
JP2017183381A (ja) * | 2016-03-29 | 2017-10-05 | 日本特殊陶業株式会社 | 保持装置 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5497093A (en) | 1978-01-17 | 1979-07-31 | Chino Works Ltd | Apparatus and method for correcting graduation of moisture meter |
US5846375A (en) * | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
JP4644943B2 (ja) * | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
KR100532322B1 (ko) | 2003-06-04 | 2005-11-29 | 삼성전자주식회사 | 웨이퍼 베이킹 플레이트의 냉각 장치 |
JP2005209981A (ja) | 2004-01-26 | 2005-08-04 | Sumitomo Electric Ind Ltd | 冷却ブロック、ヒータユニット及びそれを搭載した装置 |
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
KR20090011306A (ko) * | 2007-07-25 | 2009-02-02 | 세크론 주식회사 | 웨이퍼 프로빙 검사장치용 척 및 이를 구비한 웨이퍼 프로빙 검사장치 |
US8405005B2 (en) * | 2009-02-04 | 2013-03-26 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
US9267742B2 (en) * | 2010-01-27 | 2016-02-23 | Applied Materials, Inc. | Apparatus for controlling the temperature uniformity of a substrate |
JP5463224B2 (ja) | 2010-07-09 | 2014-04-09 | 日本発條株式会社 | 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート |
JP5666395B2 (ja) | 2011-07-04 | 2015-02-12 | 日本発條株式会社 | 温度調節装置および温度調節装置の製造方法 |
JP6285620B2 (ja) * | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
US20130284372A1 (en) * | 2012-04-25 | 2013-10-31 | Hamid Tavassoli | Esc cooling base for large diameter subsrates |
WO2014116392A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Electrostatic chuck with concentric cooling base |
JP5980147B2 (ja) | 2013-03-08 | 2016-08-31 | 日本発條株式会社 | 基板支持装置 |
US9668373B2 (en) * | 2013-03-15 | 2017-05-30 | Applied Materials, Inc. | Substrate support chuck cooling for deposition chamber |
JP6196095B2 (ja) * | 2013-08-07 | 2017-09-13 | 日本特殊陶業株式会社 | 静電チャック |
JP6349228B2 (ja) | 2014-10-22 | 2018-06-27 | 新光電気工業株式会社 | 静電チャック及びその静電チャックに使用されるベース部材 |
KR101634452B1 (ko) | 2014-10-24 | 2016-06-29 | 세메스 주식회사 | 프로브 카드를 이용한 웨이퍼 검사용 척 구조물 |
WO2017029876A1 (ja) | 2015-08-20 | 2017-02-23 | 日本碍子株式会社 | 静電チャックヒータ |
US10586718B2 (en) * | 2015-11-11 | 2020-03-10 | Applied Materials, Inc. | Cooling base with spiral channels for ESC |
KR20170078890A (ko) | 2015-12-29 | 2017-07-10 | (주) 예스티 | 온도 균일도가 향상되도록 구성되는 정전척 |
KR101736363B1 (ko) | 2016-04-18 | 2017-05-18 | (주)티티에스 | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
KR20190077117A (ko) * | 2016-11-21 | 2019-07-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 효율적인 가스 분배 조립체 냉각을 위한 동심형 또는 나선형 채널을 갖는 2구역 유동 냉각 플레이트 설계 |
JP6982394B2 (ja) * | 2017-02-02 | 2021-12-17 | 東京エレクトロン株式会社 | 被加工物の処理装置、及び載置台 |
WO2019204125A1 (en) * | 2018-04-21 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater having cooling channels with minimum fluid drag |
CN108682635B (zh) * | 2018-05-03 | 2021-08-06 | 拓荆科技股份有限公司 | 具有加热机制的晶圆座及包含该晶圆座的反应腔体 |
KR102608957B1 (ko) * | 2018-08-27 | 2023-12-01 | 삼성전자주식회사 | 플라즈마 처리 장치 |
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- 2019-03-26 JP JP2019058284A patent/JP6918042B2/ja active Active
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332518A (ja) * | 2005-05-30 | 2006-12-07 | Nikon Corp | 静電チャックおよび露光装置 |
JP2013051422A (ja) * | 2007-07-11 | 2013-03-14 | Semes Co Ltd | プレート、これを有する基板温度調節装置及びこれを有する基板処理装置。 |
JP2017183381A (ja) * | 2016-03-29 | 2017-10-05 | 日本特殊陶業株式会社 | 保持装置 |
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WO2023166866A1 (ja) * | 2022-03-01 | 2023-09-07 | 日本碍子株式会社 | ウエハ載置台 |
KR20230140386A (ko) | 2022-03-29 | 2023-10-06 | 토토 가부시키가이샤 | 정전 척 |
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JP6918042B2 (ja) | 2021-08-11 |
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US20200312684A1 (en) | 2020-10-01 |
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