JP7620570B2 - ＡｌＮ単結晶板 - Google Patents

ＡｌＮ単結晶板 Download PDF

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Publication number
JP7620570B2
JP7620570B2 JP2021567340A JP2021567340A JP7620570B2 JP 7620570 B2 JP7620570 B2 JP 7620570B2 JP 2021567340 A JP2021567340 A JP 2021567340A JP 2021567340 A JP2021567340 A JP 2021567340A JP 7620570 B2 JP7620570 B2 JP 7620570B2
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Japan
Prior art keywords
single crystal
crystal plate
aln single
metal component
containing region
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JP2021567340A
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Japanese (ja)
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JPWO2021131965A1 (https=
JPWO2021131965A5 (https=
Inventor
博久 小川
義政 小林
和希 飯田
宏之 柴田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication of JPWO2021131965A5 publication Critical patent/JPWO2021131965A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021567340A 2019-12-23 2020-12-16 ＡｌＮ単結晶板 Active JP7620570B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231908 2019-12-23
JP2019231908 2019-12-23
PCT/JP2020/046970 WO2021131965A1 (ja) 2019-12-23 2020-12-16 ＡｌＮ単結晶板

Publications (3)

Publication Number Publication Date
JPWO2021131965A1 JPWO2021131965A1 (https=) 2021-07-01
JPWO2021131965A5 JPWO2021131965A5 (https=) 2022-08-19
JP7620570B2 true JP7620570B2 (ja) 2025-01-23

Family

ID=76575912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567340A Active JP7620570B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ単結晶板

Country Status (4)

Country Link
US (1) US20220328723A1 (https=)
JP (1) JP7620570B2 (https=)
CN (1) CN114761630B (https=)
WO (1) WO2021131965A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) 2003-09-26 2007-03-22 サントル　ナショナル　ドゥ　ラ　ルシェルシュ　シアンティフィック（セーエヌエールエス） 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法
JP2009018975A (ja) 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2010171420A (ja) 2008-12-26 2010-08-05 Dowa Holdings Co Ltd Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4907127B2 (ja) * 2005-08-26 2012-03-28 国立大学法人三重大学 Ｉｉｉ族窒化物の自立単結晶作製方法およびｉｉｉ族窒化物単結晶層を含む積層体
KR20150015760A (ko) * 2013-08-01 2015-02-11 서울바이오시스 주식회사 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
KR101983540B1 (ko) * 2014-08-12 2019-05-29 티디케이가부시기가이샤 알루미나 기판

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) 2003-09-26 2007-03-22 サントル　ナショナル　ドゥ　ラ　ルシェルシュ　シアンティフィック（セーエヌエールエス） 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法
JP2009018975A (ja) 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2010171420A (ja) 2008-12-26 2010-08-05 Dowa Holdings Co Ltd Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPWO2021131965A1 (https=) 2021-07-01
CN114761630A (zh) 2022-07-15
WO2021131965A1 (ja) 2021-07-01
US20220328723A1 (en) 2022-10-13
CN114761630B (zh) 2024-07-19

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