WO2021131965A1 - ＡｌＮ単結晶板 - Google Patents

ＡｌＮ単結晶板 Download PDF

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Publication number
WO2021131965A1
WO2021131965A1 PCT/JP2020/046970 JP2020046970W WO2021131965A1 WO 2021131965 A1 WO2021131965 A1 WO 2021131965A1 JP 2020046970 W JP2020046970 W JP 2020046970W WO 2021131965 A1 WO2021131965 A1 WO 2021131965A1
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WIPO (PCT)
Prior art keywords
single crystal
crystal plate
aln single
metal component
containing region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2020/046970
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English (en)
French (fr)
Japanese (ja)
Inventor
博久 小川
義政 小林
和希 飯田
宏之 柴田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
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Priority to CN202080080357.9A priority Critical patent/CN114761630B/zh
Priority to JP2021567340A priority patent/JP7620570B2/ja
Publication of WO2021131965A1 publication Critical patent/WO2021131965A1/ja
Priority to US17/807,395 priority patent/US20220328723A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

Definitions

  • the technique disclosed herein relates to an AlN single crystal plate.
  • Non-Patent Document 1 discloses a method for manufacturing an ultraviolet light emitting device manufactured on an AlN single crystal plate.
  • a functional layer of an ultraviolet light emitting device is formed on an AlN single crystal plate. After the functional layer is formed on the AlN single crystal plate, the AlN single crystal plate is thinned by mechanical polishing in order to improve the ultraviolet light transmittance.
  • an AlN single crystal plate is used as a handling substrate for manufacturing the ultraviolet light emitting device. Therefore, after forming a functional layer on a thick AlN single crystal plate, the AlN single crystal plate is thinned by mechanical polishing to a required thickness. However, if the AlN single crystal plate is thinned by mechanical polishing, the functional layer may be affected during mechanical polishing. Therefore, conventionally, when thinning an AlN single crystal plate by mechanical polishing, it is necessary to carefully perform mechanical polishing in order to suppress the influence on the functional layer. As a result, the time required to manufacture the ultraviolet light emitting device increases. Therefore, an AlN single crystal plate that can be easily thinned is required.
  • This specification discloses an AlN single crystal plate that can be easily thinned.
  • the AlN single crystal plate disclosed in the present specification has a first surface in the thickness direction and a second surface facing the first surface.
  • a metal component-containing region exists substantially parallel to the first surface in the intermediate portion between the first surface and the second surface.
  • a metal component-containing region in which a plurality of metal components are dispersed and introduced exists in an intermediate portion between the first surface and the second surface. Therefore, for example, by irradiating the AlN single crystal plate with a laser to sublimate (vaporize) the metal component, fine cracks can be generated in the metal component-containing region, and the AlN single crystal plate can be thinned. That is, the AlN single crystal plate can be thinned by a method other than mechanical polishing such as laser lift-off. Therefore, the AlN single crystal plate can be easily thinned, and the influence on the functional layer of the ultraviolet light emitting device or the like when the AlN single crystal substrate is thinned can be reduced.
  • the schematic diagram of the ultraviolet light emitting device manufactured using the AlN single crystal plate which concerns on Example The schematic diagram of the AlN single crystal plate which concerns on Example.
  • AlN single crystal plate disclosed herein for example, compared to sapphire, Al x Ga y N (0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1) and is close or the same nitride semiconductor and the lattice constant of such is there. Therefore, the AlN single crystal plate disclosed in the present specification is useful as a growth substrate for an ultraviolet light emitting device (UV LED) having a nitride semiconductor as a functional layer. Further, AlN single crystal plate, for example as compared to sapphire, Al x Ga y N (0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1) such as a can or the same close nitride semiconductor and the thermal expansion coefficient of sapphire It has mechanical strength comparable to that of sapphire.
  • UV LED ultraviolet light emitting device
  • the AlN single crystal plate disclosed in the present specification has a metal component-containing region in which the metal component is dispersed and introduced in the intermediate portion between the first surface and the second surface in the thickness direction.
  • the metal component-containing region is substantially parallel to the first surface (or the first surface and the second surface). Therefore, for example, after the ultraviolet light emitting device is manufactured on the AlN single crystal plate, the AlN single crystal plate is irradiated with a laser from the opposite side of the surface on which the ultraviolet light emitting device is manufactured, so that the metal component in the metal component-containing region is obtained.
  • the laser can be absorbed to lift off the back surface side (the side where the functional layer of the ultraviolet light emitting device is not provided) from the metal component-containing region. Since the AlN single crystal plate can be thinned in a short time regardless of the thickness of the AlN single crystal plate lifted off (removed), the manufacturing time of the ultraviolet light emitting device can be shortened. That is, even when the ultraviolet light emitting device is manufactured using the thick AlN single crystal plate, it is possible to suppress an increase in the time required for manufacturing the ultraviolet light emitting device.
  • the thinning of the AlN single crystal plate by laser lift-off can reduce the force (vibration) applied to the functional layer of the ultraviolet light emitting device as compared with the thinning by mechanical polishing, and the influence on the functional layer is reduced. can do.
  • the portion of the AlN single crystal plate other than the metal component-containing region and the metal component-containing region can be distinguished by observing the AlN single crystal plate using an SEM or the like.
  • the "first surface” means one of the front and back surfaces of the AlN single crystal plate
  • the "second surface” means the other of the front and back surfaces of the AlN single crystal plate.
  • first surface means the front surface of the AlN single crystal plate
  • second surface means the back surface of the AlN single crystal plate.
  • the "first surface” means the back surface of the AlN single crystal plate
  • the “second surface” means the front surface of the AlN single crystal plate.
  • the metal component-containing region is substantially parallel to the first surface means a form in which the metal component-containing region extends along the first surface at an angle of less than 5 degrees with respect to the first surface.
  • the AlN single crystal plate disclosed in the present specification is not particularly limited, but may have a thickness (distance between the front and back surfaces) of 0.3 to 1.0 mm.
  • the metal component-containing region is locally provided between the front surface and the back surface. That is, the metal component-containing region exists in a part of the AlN single crystal plate in the thickness direction.
  • the thickness of the metal component-containing region in the AlN single crystal plate may be 0.1 ⁇ m or more and 5.0 ⁇ m or less.
  • the metal component sufficiently absorbs the laser and sublimates, and fine cracks are formed in the metal component-containing region. It can be generated and lift off a part (the part to be removed) of the AlN single crystal plate.
  • the AlN single crystal plate can be suitably laser lifted off without adversely affecting the ultraviolet light emitting device.
  • the thickness of the metal component-containing region may be 0.2 ⁇ m or more, 0.3 ⁇ m or more, 0.5 ⁇ m or more, 0.7 ⁇ m or more, and 1.0 ⁇ m. It may be the above, and may be 1.5 ⁇ m or more.
  • the thickness of the metal component-containing region may be 4.5 ⁇ m or less, 4.0 ⁇ m or less, 3.0 ⁇ m or less, 2.0 ⁇ m or less, and 1.0 ⁇ m. It may be less than or equal to 0.5 ⁇ m or less.
  • the distance between adjacent metal components may be 1 ⁇ m or more and 300 ⁇ m or less in the metal component-containing region.
  • the gap between the metal components may be 1 ⁇ m or more and 300 ⁇ m or less.
  • the distance between adjacent metal components is 1 ⁇ m or more, it is possible to suppress an adverse effect on the ultraviolet light emitting device due to cracks generated in the metal component-containing region.
  • the thickness is 300 ⁇ m or less, cracks generated in the metal component-containing region are connected, and the back surface side of the AlN single crystal plate can be reliably separated by laser lift-off.
  • the "adjacent metal components” mean metal components that are adjacent to each other in a direction (substantially parallel) along the first surface.
  • the distance between adjacent metal components may be 2 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, 20 ⁇ m or more, and 25 ⁇ m or more. Further, the distance between the metal components in the metal component-containing region may be 275 ⁇ m or less, 250 ⁇ m or less, 200 ⁇ m or less, 150 ⁇ m or less, or 100 ⁇ m or less. ..
  • the metal component-containing region may contain at least one metal component selected from Al, Ga, Cu, Fe, Mo, Ni, Ta, and Ti, as described above. At least one of the metal components may be contained as a main component. Further, "a main component containing at least one of the metal components” means that the metal component-containing region contains 50% by weight or more of the metal component.
  • the metal component in the metal component-containing region may be, for example, a simple substance metal, an alloy containing the metal component, an oxide containing the metal component, a composite oxide, or a nitride. , Composite nitride, and composite oxynitride.
  • the metal component-containing region may contain at least one metal component selected from Al, Ga, Cu, and Ni in particular.
  • the above-mentioned metal component material is relatively easily available, and in particular, it easily absorbs laser light, so that it can be suitably laser lifted off.
  • the metal component may be in the form of particles.
  • the metal component particles containing the metal component
  • the metal component may have an aspect ratio of more than 1 and 10 or less.
  • the metal component may exist in the metal component-containing region so that the long side is along the first surface (or the first surface and the second surface) (substantially parallel).
  • the long side of the metal component may be arranged so as to form an angle of less than 20 degrees with respect to the first surface.
  • the metal component can be easily introduced into the AlN single crystal plate.
  • the aspect ratio may be 0.5 or more, 1.0 or more, 1.5 or more, or 2.0 or more. Further, the aspect ratio may be 8 or less, 7 or less, 5 or less, or 3 or less.
  • the AlN single crystal plate 10 is used as a handling substrate for manufacturing the ultraviolet light emitting device 1. Therefore, before the AlN single crystal plate 10 is described in detail, the ultraviolet light emitting device 1 using the AlN single crystal plate 10 as a handling substrate will be briefly described.
  • the ultraviolet light emitting device 1 is an ultraviolet light emitting diode (UV LED), and includes an AlN single crystal substrate 10a, an n-type nitride semiconductor layer 2, a p-type nitride semiconductor layer 3, and a light emitting layer 4.
  • the n-type nitride semiconductor layer 2 is provided on the surface of the AlN single crystal substrate 10a.
  • the light emitting layer 4 is provided on a part of the surface of the n-type nitride semiconductor layer 2 (on the right side in FIG. 1). Therefore, the surface of the n-type nitride semiconductor layer 2 is partially provided with the light emitting layer 4, and the other parts are exposed.
  • a p-type nitride semiconductor layer 3 is provided on the surface of the light emitting layer 4. That is, the light emitting layer 4 is provided between the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3. Electrodes (not shown) are provided on the surface of the p-type nitride semiconductor layer 3 and the exposed portion of the surface of the n-type nitride semiconductor layer 2, respectively.
  • the n-type nitride semiconductor layer 2 may actually be formed of a plurality of layers, and the p-type nitride semiconductor layer 3 may be formed of a plurality of layers. Often, the light emitting layer 4 may be formed of a plurality of layers.
  • each layer of the n-type nitride semiconductor layer 2, each layer of the p-type nitride semiconductor layer 3, and each layer of the light emitting layer 4 can be appropriately selected according to the application of the ultraviolet light emitting device 1.
  • the n-type nitride semiconductor layer 2 is formed on the surface of the AlN single crystal plate 10 of this embodiment.
  • the light emitting layer 4 is formed on the surface of the formed n-type nitride semiconductor layer 2, and the p-type nitride semiconductor layer 3 is formed on the surface of the formed light emitting layer 4.
  • a part of the light emitting layer 4 and the p-type nitride semiconductor layer 3 is removed to expose a part of the surface of the n-type nitride semiconductor layer 2.
  • the AlN single crystal plate 10 is used to form the high-quality nitride semiconductor layers 2, 3 and 4.
  • a thick AlN is used as a handling substrate when manufacturing the ultraviolet light emitting device 1.
  • the single crystal plate 10 is used.
  • the AlN single crystal plate 10 (AlN single crystal plate 10a) emits light (ultraviolet light) due to the thickness of the AlN single crystal plate 10. It becomes difficult to penetrate.
  • the AlN single crystal plate 10 is thinned to a required thickness. That is, the removal portion 10b, which is an unnecessary portion, is removed from the AlN single crystal plate 10 so that only the AlN single crystal substrate 10a required as the substrate is left.
  • the n-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3, and the light emitting layer 4 may be collectively referred to as a “functional layer”.
  • the AlN single crystal plate 10 is composed of a single crystal AlN.
  • the AlN single crystal plate 10 can be formed by, for example, a sublimation method.
  • the method for forming the AlN single crystal plate 10 is not particularly limited, and the AlN single crystal plate 10 can be used, for example, by a vapor deposition method such as a CVD method, an HVPE method, an MBE method, or a sputtering method, or a hydrothermal method.
  • a vapor deposition method such as a CVD method, an HVPE method, an MBE method, or a sputtering method, or a hydrothermal method.
  • Na flux method and other liquid phase deposition methods, and other methods such as room temperature bonding in which two single crystal AlNs are bonded by a surface activation method can also be used.
  • the AlN single crystal plate 10 includes a metal component-containing region 16 provided between the front surface 12 and the back surface 14.
  • the surface on which the functional layer is formed is referred to as the surface 12.
  • the opposite side is called the back side 14.
  • the metal component-containing region 16 is locally provided in the thickness direction of the AlN single crystal plate 10, and is provided substantially parallel to the intermediate portion (intermediate portion in the thickness direction) between the front surface 12 and the back surface 14.
  • the metal component-containing region 16 a plurality of metal particles are dispersed and introduced in the single crystal AlN.
  • the metal particles in the metal component-containing region 16 have an aspect ratio of more than 1 and adjusted to 10 or less, and their long sides are arranged along the front surface 12 and the back surface 14. Further, the metal particles are arranged at intervals so that the distance between the adjacent metal components is 1 ⁇ m to 300 ⁇ m.
  • the method of introducing metal particles (metal components) is not particularly limited.
  • the metal component-containing region 16 can be formed by mixing a raw material containing a metal component with a raw material (solid raw material or raw material gas) forming the AlN single crystal layer 12.
  • the metal component can be introduced into the intermediate portion of the AlN single crystal layer 12.
  • the metal particles are simple substances selected from Al, Ga, Cu, Fe, Mo, Ni, Ta, and Ti.
  • the metal component-containing region 16 contains at least one of the above metal components as a main component.
  • the metal particles may be an alloy containing the metal element, an oxide or a composite oxide containing the metal element, or a nitride or a composite nitride containing the metal component. It may be a composite oxynitride containing the above-mentioned metal component.
  • the metal component-containing region 16 prevents the laser light from being transmitted from the front surface 12 to the back surface 14 (or from the back surface 14 to the front surface 12) of the AlN single crystal plate 10 due to the introduction of the metal particles. Specifically, when the laser beam is irradiated from the back surface 14 of the AlN single crystal plate 10, the metal particles in the metal component-containing region 16 absorb the laser beam. As a result, the metal component is sublimated (vaporized), and the removing portion 10b (see FIG. 1) can be removed (lifted off). As the metal particles introduced into the metal component-containing region 16, those that easily absorb the laser beam are selected. Specifically, metal particles having a wavelength of 245 nm to 1200 nm, which are easily absorbed, are introduced into the metal component-containing region 16.
  • Table 1 below shows an example of a metal that easily absorbs light having a wavelength of 245 nm to 1200 nm.
  • the metals shown in Table 1 (Al, Ga, Cu, Fe, Mo, Ni, Ta, Ti) preferably absorb laser light having a wavelength of 245 nm to 1200 nm.
  • Table 1 shows the absorbance of the metal with respect to light having wavelengths of 400 nm and 800 nm.
  • the metals shown in Table 1 (Al, Ga, Cu, Fe, Mo, Ni, Ta, Ti) absorb light having a wavelength of 245 nm to 1200 nm well.
  • the metal particles containing these elements absorb and vaporize the laser beam when irradiated with the laser beam having a wavelength of 245 nm to 1200 nm. Since the metal component-containing region 16 is provided substantially parallel to the front surface 12 and the back surface 14 of the AlN single crystal plate 10, the AlN single crystal plate 10 is separated by the metal component-containing region 16. Therefore, the AlN single crystal plate 10 into which the metal particles containing at least one of the above elements have been introduced can be thinned in the metal component-containing region 16 by laser lift-off.
  • the thickness L1 of the AlN single crystal plate 10 is adjusted to 0.3 mm to 1.0 mm, and the thickness L2 of the metal component-containing region 16 is adjusted to 0.1 ⁇ m to 5.0 ⁇ m. It has been adjusted.
  • the thickness L1 of the AlN single crystal plate 10 is the length between the front surface 12 and the back surface 14, and indicates the length in the direction perpendicular to the front surface 12 and the back surface 14. Further, the thickness L2 of the metal component-containing region 16 also indicates the length in the direction perpendicular to the front surface 12 and the back surface 14.
  • the thickness L2 of the metal component-containing region 16 By setting the thickness L2 of the metal component-containing region 16 to 0.1 ⁇ m or more, it is possible to obtain the effect that the metal particles (metal component) reliably absorb the laser beam and generate heat in the metal component-containing region 16. As a result, the laser lift-off can be performed in the metal component-containing region 16. Further, by setting the thickness L2 to 5.0 ⁇ m or less, the generation of cracks due to the irradiation of the laser beam can be contained within the metal component-containing region 16. Therefore, it is possible to suppress an adverse effect on the ultraviolet light emitting device.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/JP2020/046970 2019-12-23 2020-12-16 ＡｌＮ単結晶板 Ceased WO2021131965A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202080080357.9A CN114761630B (zh) 2019-12-23 2020-12-16 AlN单晶板
JP2021567340A JP7620570B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ単結晶板
US17/807,395 US20220328723A1 (en) 2019-12-23 2022-06-17 AlN MONOCRYSTAL PLATE

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JP2019-231908 2019-12-23
JP2019231908 2019-12-23

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US17/807,395 Continuation US20220328723A1 (en) 2019-12-23 2022-06-17 AlN MONOCRYSTAL PLATE

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JP2009018975A (ja) * 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2010171420A (ja) * 2008-12-26 2010-08-05 Dowa Holdings Co Ltd Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP2015040136A (ja) * 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

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JP4907127B2 (ja) * 2005-08-26 2012-03-28 国立大学法人三重大学 Ｉｉｉ族窒化物の自立単結晶作製方法およびｉｉｉ族窒化物単結晶層を含む積層体
KR20150015760A (ko) * 2013-08-01 2015-02-11 서울바이오시스 주식회사 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009018975A (ja) * 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2010171420A (ja) * 2008-12-26 2010-08-05 Dowa Holdings Co Ltd Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP2015040136A (ja) * 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

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CN114761630A (zh) 2022-07-15
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US20220328723A1 (en) 2022-10-13
CN114761630B (zh) 2024-07-19

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