JPWO2021131965A1 - - Google Patents
Info
- Publication number
- JPWO2021131965A1 JPWO2021131965A1 JP2021567340A JP2021567340A JPWO2021131965A1 JP WO2021131965 A1 JPWO2021131965 A1 JP WO2021131965A1 JP 2021567340 A JP2021567340 A JP 2021567340A JP 2021567340 A JP2021567340 A JP 2021567340A JP WO2021131965 A1 JPWO2021131965 A1 JP WO2021131965A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019231908 | 2019-12-23 | ||
| JP2019231908 | 2019-12-23 | ||
| PCT/JP2020/046970 WO2021131965A1 (ja) | 2019-12-23 | 2020-12-16 | ＡｌＮ単結晶板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021131965A1 true JPWO2021131965A1 (https=) | 2021-07-01 |
| JPWO2021131965A5 JPWO2021131965A5 (https=) | 2022-08-19 |
| JP7620570B2 JP7620570B2 (ja) | 2025-01-23 |
Family
ID=76575912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021567340A Active JP7620570B2 (ja) | 2019-12-23 | 2020-12-16 | ＡｌＮ単結晶板 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220328723A1 (https=) |
| JP (1) | JP7620570B2 (https=) |
| CN (1) | CN114761630B (https=) |
| WO (1) | WO2021131965A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007506635A (ja) * | 2003-09-26 | 2007-03-22 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック（セーエヌエールエス） | 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法 |
| JP2009018975A (ja) * | 2007-07-13 | 2009-01-29 | Ngk Insulators Ltd | 非極性面ｉｉｉ族窒化物単結晶の製造方法 |
| JP2010171420A (ja) * | 2008-12-26 | 2010-08-05 | Dowa Holdings Co Ltd | Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 |
| JP2015040136A (ja) * | 2013-08-20 | 2015-03-02 | 住友電気工業株式会社 | Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4907127B2 (ja) * | 2005-08-26 | 2012-03-28 | 国立大学法人三重大学 | Ｉｉｉ族窒化物の自立単結晶作製方法およびｉｉｉ族窒化物単結晶層を含む積層体 |
| KR20150015760A (ko) * | 2013-08-01 | 2015-02-11 | 서울바이오시스 주식회사 | 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법 |
| KR101983540B1 (ko) * | 2014-08-12 | 2019-05-29 | 티디케이가부시기가이샤 | 알루미나 기판 |
-
2020
- 2020-12-16 CN CN202080080357.9A patent/CN114761630B/zh active Active
- 2020-12-16 JP JP2021567340A patent/JP7620570B2/ja active Active
- 2020-12-16 WO PCT/JP2020/046970 patent/WO2021131965A1/ja not_active Ceased
-
2022
- 2022-06-17 US US17/807,395 patent/US20220328723A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007506635A (ja) * | 2003-09-26 | 2007-03-22 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック（セーエヌエールエス） | 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法 |
| JP2009018975A (ja) * | 2007-07-13 | 2009-01-29 | Ngk Insulators Ltd | 非極性面ｉｉｉ族窒化物単結晶の製造方法 |
| JP2010171420A (ja) * | 2008-12-26 | 2010-08-05 | Dowa Holdings Co Ltd | Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 |
| JP2015040136A (ja) * | 2013-08-20 | 2015-03-02 | 住友電気工業株式会社 | Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114761630A (zh) | 2022-07-15 |
| JP7620570B2 (ja) | 2025-01-23 |
| WO2021131965A1 (ja) | 2021-07-01 |
| US20220328723A1 (en) | 2022-10-13 |
| CN114761630B (zh) | 2024-07-19 |
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