JPWO2021131965A5 - - Google Patents

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Publication number
JPWO2021131965A5
JPWO2021131965A5 JP2021567340A JP2021567340A JPWO2021131965A5 JP WO2021131965 A5 JPWO2021131965 A5 JP WO2021131965A5 JP 2021567340 A JP2021567340 A JP 2021567340A JP 2021567340 A JP2021567340 A JP 2021567340A JP WO2021131965 A5 JPWO2021131965 A5 JP WO2021131965A5
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JP
Japan
Prior art keywords
single crystal
crystal plate
metal component
less
aln
Prior art date
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Granted
Application number
JP2021567340A
Other languages
English (en)
Japanese (ja)
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JPWO2021131965A1 (https=
JP7620570B2 (ja
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Publication date
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Priority claimed from PCT/JP2020/046970 external-priority patent/WO2021131965A1/ja
Publication of JPWO2021131965A1 publication Critical patent/JPWO2021131965A1/ja
Publication of JPWO2021131965A5 publication Critical patent/JPWO2021131965A5/ja
Application granted granted Critical
Publication of JP7620570B2 publication Critical patent/JP7620570B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021567340A 2019-12-23 2020-12-16 ＡｌＮ単結晶板 Active JP7620570B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231908 2019-12-23
JP2019231908 2019-12-23
PCT/JP2020/046970 WO2021131965A1 (ja) 2019-12-23 2020-12-16 ＡｌＮ単結晶板

Publications (3)

Publication Number Publication Date
JPWO2021131965A1 JPWO2021131965A1 (https=) 2021-07-01
JPWO2021131965A5 true JPWO2021131965A5 (https=) 2022-08-19
JP7620570B2 JP7620570B2 (ja) 2025-01-23

Family

ID=76575912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567340A Active JP7620570B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ単結晶板

Country Status (4)

Country Link
US (1) US20220328723A1 (https=)
JP (1) JP7620570B2 (https=)
CN (1) CN114761630B (https=)
WO (1) WO2021131965A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
JP4907127B2 (ja) * 2005-08-26 2012-03-28 国立大学法人三重大学 Ｉｉｉ族窒化物の自立単結晶作製方法およびｉｉｉ族窒化物単結晶層を含む積層体
JP4825747B2 (ja) 2007-07-13 2011-11-30 日本碍子株式会社 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP4809471B2 (ja) 2008-12-26 2011-11-09 Ｄｏｗａホールディングス株式会社 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
KR20150015760A (ko) * 2013-08-01 2015-02-11 서울바이오시스 주식회사 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法
JP6465114B2 (ja) * 2014-08-12 2019-02-06 Tdk株式会社 アルミナ基板

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