JP7580601B2 - 圧接型半導体装置 - Google Patents

圧接型半導体装置 Download PDF

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Publication number
JP7580601B2
JP7580601B2 JP2023526791A JP2023526791A JP7580601B2 JP 7580601 B2 JP7580601 B2 JP 7580601B2 JP 2023526791 A JP2023526791 A JP 2023526791A JP 2023526791 A JP2023526791 A JP 2023526791A JP 7580601 B2 JP7580601 B2 JP 7580601B2
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Prior art keywords
semiconductor chip
flexible insulator
plate electrode
base plate
current
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Japanese (ja)
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JPWO2022259503A5 (https=
JPWO2022259503A1 (https=
Inventor
邦彦 田尻
裕基 塩田
和丈 門脇
哲男 本宮
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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JP2023526791A 2021-06-11 2021-06-11 圧接型半導体装置 Active JP7580601B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/022239 WO2022259503A1 (ja) 2021-06-11 2021-06-11 圧接型半導体装置

Publications (3)

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JPWO2022259503A1 JPWO2022259503A1 (https=) 2022-12-15
JPWO2022259503A5 JPWO2022259503A5 (https=) 2024-03-08
JP7580601B2 true JP7580601B2 (ja) 2024-11-11

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ID=84425101

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JP2023526791A Active JP7580601B2 (ja) 2021-06-11 2021-06-11 圧接型半導体装置

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JP (1) JP7580601B2 (https=)
DE (1) DE112021007808B4 (https=)
WO (1) WO2022259503A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151646A (ja) 2000-11-10 2002-05-24 Toshiba Corp 圧接型半導体装置
US20020145188A1 (en) 1999-09-07 2002-10-10 Hironori Kodama Flat semiconductor device and power converter employing the same
WO2019116736A1 (ja) 2017-12-12 2019-06-20 三菱電機株式会社 圧接型半導体装置及び圧接型半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152668A (ja) * 1987-12-09 1989-06-15 Fuji Electric Co Ltd 半導体装置の製造方法
JP3256636B2 (ja) 1994-09-15 2002-02-12 株式会社東芝 圧接型半導体装置
US5726466A (en) * 1995-09-11 1998-03-10 Kabushiki Kaisha Toshiba Press pack power semiconductor device incorporating a plurality of semiconductor elements
JP3684834B2 (ja) * 1998-04-21 2005-08-17 三菱電機株式会社 圧接型半導体装置
JP4281229B2 (ja) * 2000-08-09 2009-06-17 富士電機デバイステクノロジー株式会社 平型半導体装置
JP6559536B2 (ja) * 2015-10-22 2019-08-14 日本発條株式会社 電力用半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020145188A1 (en) 1999-09-07 2002-10-10 Hironori Kodama Flat semiconductor device and power converter employing the same
JP2002151646A (ja) 2000-11-10 2002-05-24 Toshiba Corp 圧接型半導体装置
WO2019116736A1 (ja) 2017-12-12 2019-06-20 三菱電機株式会社 圧接型半導体装置及び圧接型半導体装置の製造方法

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Publication number Publication date
DE112021007808T5 (de) 2024-03-21
JPWO2022259503A1 (https=) 2022-12-15
DE112021007808B4 (de) 2025-11-13
WO2022259503A1 (ja) 2022-12-15

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