JP7564088B2 - アーク発生を防止または抑制するための化学蒸着ツール - Google Patents

アーク発生を防止または抑制するための化学蒸着ツール Download PDF

Info

Publication number
JP7564088B2
JP7564088B2 JP2021506503A JP2021506503A JP7564088B2 JP 7564088 B2 JP7564088 B2 JP 7564088B2 JP 2021506503 A JP2021506503 A JP 2021506503A JP 2021506503 A JP2021506503 A JP 2021506503A JP 7564088 B2 JP7564088 B2 JP 7564088B2
Authority
JP
Japan
Prior art keywords
substrate
plasma
pedestal
bias voltage
substrate pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021506503A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021533273A5 (https=
JPWO2020033122A5 (https=
JP2021533273A (ja
Inventor
サキヤマ・ユキノリ
リーサー・カール・フレデリック
バークハート・ヴィンセント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2021533273A publication Critical patent/JP2021533273A/ja
Publication of JP2021533273A5 publication Critical patent/JP2021533273A5/ja
Publication of JPWO2020033122A5 publication Critical patent/JPWO2020033122A5/ja
Priority to JP2024166834A priority Critical patent/JP7793012B2/ja
Application granted granted Critical
Publication of JP7564088B2 publication Critical patent/JP7564088B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2021506503A 2018-08-07 2019-07-19 アーク発生を防止または抑制するための化学蒸着ツール Active JP7564088B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024166834A JP7793012B2 (ja) 2018-08-07 2024-09-26 アーク発生を防止または抑制するための化学蒸着ツール

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/057,383 US20200048770A1 (en) 2018-08-07 2018-08-07 Chemical vapor deposition tool for preventing or suppressing arcing
US16/057,383 2018-08-07
PCT/US2019/042575 WO2020033122A1 (en) 2018-08-07 2019-07-19 Chemical vapor deposition tool for preventing or suppressing arcing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024166834A Division JP7793012B2 (ja) 2018-08-07 2024-09-26 アーク発生を防止または抑制するための化学蒸着ツール

Publications (4)

Publication Number Publication Date
JP2021533273A JP2021533273A (ja) 2021-12-02
JP2021533273A5 JP2021533273A5 (https=) 2022-07-22
JPWO2020033122A5 JPWO2020033122A5 (https=) 2022-07-22
JP7564088B2 true JP7564088B2 (ja) 2024-10-08

Family

ID=69405586

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021506503A Active JP7564088B2 (ja) 2018-08-07 2019-07-19 アーク発生を防止または抑制するための化学蒸着ツール
JP2024166834A Active JP7793012B2 (ja) 2018-08-07 2024-09-26 アーク発生を防止または抑制するための化学蒸着ツール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024166834A Active JP7793012B2 (ja) 2018-08-07 2024-09-26 アーク発生を防止または抑制するための化学蒸着ツール

Country Status (6)

Country Link
US (2) US20200048770A1 (https=)
JP (2) JP7564088B2 (https=)
KR (2) KR20260011771A (https=)
CN (2) CN112567072A (https=)
TW (1) TW202018122A (https=)
WO (1) WO2020033122A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US11749554B2 (en) 2020-11-05 2023-09-05 Sandisk Technologies Llc Multi-wafer deposition tool for reducing residual deposition on transfer blades and methods of operating the same
US12136225B2 (en) * 2022-09-09 2024-11-05 Applied Materials, Inc. Clog detection via image analytics
US12476091B2 (en) * 2023-04-18 2025-11-18 Tokyo Electron Limited Electrostatic chuck and method of operation for plasma processing
JP2024172480A (ja) * 2023-05-31 2024-12-12 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002507326A (ja) 1997-06-27 2002-03-05 ラム・リサーチ・コーポレーション 双極静電チャックにおけるプラズマバイアス電圧のオフセット方法および装置
JP2014533436A (ja) 2011-11-04 2014-12-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板クランプシステム及び該システムを動作させるための方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US6304424B1 (en) * 1998-04-03 2001-10-16 Applied Materials Inc. Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system
US6104596A (en) 1998-04-21 2000-08-15 Applied Materials, Inc. Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same
US7199327B2 (en) * 2002-06-28 2007-04-03 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
US7276122B2 (en) * 2004-04-21 2007-10-02 Mattson Technology, Inc. Multi-workpiece processing chamber
US20070042131A1 (en) * 2005-08-22 2007-02-22 Applied Materials, Inc., A Delaware Corporation Non-intrusive plasma monitoring system for arc detection and prevention for blanket CVD films
JP4674177B2 (ja) * 2006-03-15 2011-04-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7864502B2 (en) * 2007-05-15 2011-01-04 International Business Machines Corporation In situ monitoring of wafer charge distribution in plasma processing
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
CN101779269B (zh) * 2008-07-23 2014-05-07 新动力等离子体株式会社 多工件处理室以及包括该多工件处理室的工件处理系统
TWI495536B (zh) * 2008-10-20 2015-08-11 創意科技股份有限公司 Electrostatic suction cup inspection method and electrostatic sucker device
US8908348B2 (en) * 2009-09-01 2014-12-09 Hermes Microvision, Inc. Wafer grounding and biasing method, apparatus, and application
US20130240147A1 (en) * 2012-03-19 2013-09-19 Sang Ki Nam Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
JP2014075398A (ja) * 2012-10-03 2014-04-24 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US9593421B2 (en) * 2013-11-06 2017-03-14 Applied Materials, Inc. Particle generation suppressor by DC bias modulation
GB201321463D0 (en) * 2013-12-05 2014-01-22 Oxford Instr Nanotechnology Tools Ltd Electrostatic clamping method and apparatus
US20180233321A1 (en) * 2017-02-16 2018-08-16 Lam Research Corporation Ion directionality esc
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002507326A (ja) 1997-06-27 2002-03-05 ラム・リサーチ・コーポレーション 双極静電チャックにおけるプラズマバイアス電圧のオフセット方法および装置
JP2014533436A (ja) 2011-11-04 2014-12-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板クランプシステム及び該システムを動作させるための方法

Also Published As

Publication number Publication date
KR20260011771A (ko) 2026-01-23
US20230416922A1 (en) 2023-12-28
JP7793012B2 (ja) 2025-12-26
US20200048770A1 (en) 2020-02-13
WO2020033122A1 (en) 2020-02-13
CN112567072A (zh) 2021-03-26
TW202018122A (zh) 2020-05-16
JP2021533273A (ja) 2021-12-02
KR20210031760A (ko) 2021-03-22
CN120844058A (zh) 2025-10-28
JP2025004048A (ja) 2025-01-14

Similar Documents

Publication Publication Date Title
JP7793012B2 (ja) アーク発生を防止または抑制するための化学蒸着ツール
US10763081B2 (en) Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
KR102721101B1 (ko) 용량 결합형 플라즈마 처리 장치의 에지 링의 rf 진폭 제어
US7988814B2 (en) Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
JP5514413B2 (ja) プラズマエッチング方法
US10068778B2 (en) Plasma processing method and plasma processing apparatus
US20050031796A1 (en) Method and apparatus for controlling spatial distribution of RF power and plasma density
TW201719709A (zh) 用以改良晶圓之極限邊緣處的特徵部輪廓偏斜之邊緣環組件
TW201705266A (zh) 透過邊緣局部的離子軌跡控制與電漿操作之極限邊緣鞘及晶圓輪廓調整
TW202312678A (zh) 電壓脈衝的時域多工
KR20210039288A (ko) 탑재대 및 플라즈마 처리 장치
CN103219216A (zh) 等离子体处理装置
US20100078129A1 (en) Mounting table for plasma processing apparatus
CN105719930B (zh) 等离子体蚀刻方法
TW202137393A (zh) 電漿處理裝置
JP7325294B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR20170067717A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP5951324B2 (ja) プラズマ処理装置
US20230162956A1 (en) Substrate processing apparatus and substrate processing method
JP6510922B2 (ja) プラズマ処理装置及びプラズマ処理方法
CN109952636A (zh) 等离子体点燃抑制
CN112992635B (zh) 一种晶圆固定装置及其形成方法、等离子体处理设备
KR20250108727A (ko) 프로세싱 챔버에서의 챔버 임피던스 관리
WO2025130562A1 (zh) 衬底处理装置
TW200400781A (en) Atmospheric pressure plasma generator

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210714

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220713

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230829

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240510

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240926

R150 Certificate of patent or registration of utility model

Ref document number: 7564088

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150