200400781 五、發明說明（1) 本發明主張2 0 0 2年7月21曰申請的韓國專利申請號第 2002-34880號之優先權，其内容合併作為參考用。 發明所屬之技術領域 本發明疋有關於一種電漿產生器（plasma generator)，且特別是有關於一種可在大氣壓力 (atmospheric pressure)下產生電漿的電漿產生器。 先前技術 一般放電（discharged)電漿是利用其高溫來切掉、 焊接與燃燒金屬。另外，可供應產生於電漿中的活性粒 子到一化學反應中。舉例來說，可用電漿改變一物體的 表面型態’以從物體表面處理或去除污染物及微粒。 第1圖所示係習知一種大氣壓電漿產生器，以及第2 圖所示係電位（electric potential)與一物體距離第1圖 之大氣壓電漿產生器的距離之關係圖。請參照第1圖與第 2圖，習知的大氣壓電漿產生器會供應一頻率範圍在幾十 Hz到幾百kHz之間的交流電（alternating current，簡稱 A C )電源4 0到一陰極1 〇 ’並連接一陽極2 〇到接地電壓5 〇。 然後，將氣體注入一氣體供應洞3 0中，以於大氣壓力下 產生電漿6 0。不過很難控制到達待處理之一物體7 〇的表 面之離子42與電子52的數量，原因是電漿60的電位與陰 極1 0和陽極2 0的電位間差異不能分開控制。 請再參照第2圖，如果增加電位的一控制值，則大量 的離子4 2將會遷移到陰極1 〇。結果，到達待處理之物體 7 0表面之離子4 2的數量將會減少。然而，要控制到達物200400781 V. Description of the invention (1) The present invention claims the priority of Korean Patent Application No. 2002-34880 filed on July 21, 2002, the contents of which are incorporated by reference. FIELD OF THE INVENTION The present invention relates to a plasma generator, and more particularly, to a plasma generator capable of generating plasma under atmospheric pressure. Prior art Generally, a discharged plasma uses its high temperature to cut, weld, and burn metal. In addition, the active particles produced in the plasma can be supplied to a chemical reaction. For example, a plasma can be used to change the surface configuration of an object ' to treat or remove contaminants and particles from the surface of the object. Figure 1 shows a conventional type of atmospheric piezoelectric plasma generator, and the relationship between the electric potential of the system shown in Figure 2 and the distance from an object to the atmospheric piezoelectric plasma generator of Figure 1. Please refer to FIG. 1 and FIG. 2. The conventional atmospheric piezoelectric plasma generator will supply an alternating current (AC) power source 40 to a cathode 1 0 with a frequency range between tens of Hz and hundreds of kHz. 'And connect an anode 20 to the ground voltage 50. Then, the gas is injected into a gas supply hole 30 to generate a plasma 60 at atmospheric pressure. However, it is difficult to control the number of ions 42 and electrons 52 reaching the surface of one of the objects to be treated, because the difference between the potential of the plasma 60 and the potential of the cathodes 10 and 20 cannot be controlled separately. Please refer to FIG. 2 again. If a potential control value is increased, a large amount of ions 4 2 will migrate to the cathode 10. As a result, the number of ions 42 that reach the surface of the object 70 to be treated will decrease. However, to control the arrivals
11372pif.ptd 第5頁 200400781 五、發明說明（2) 體70表面之電子52的數量是不可能的。所以，因到達物 體70表面之離子42數量與電子52數量之差異，會發生高 電位的靜電（static electricity)。尤其是如果物體70 表面是由一導體與一絕緣體所組成的（例如，在絕緣層上 形成金屬層圖案），則會因為靜電之放電而發生次級圖案 (inferior pattern) 〇 也就是說，當使用習知的大氣壓電漿處理器改變待 處理之物體的表面型態或去除污染物與微粒時，物體有 可能會被有關物體表面及物體狀態（s t a t u s )之高靜電的 放電傷害到。 發明内容 因此，本發明之目的是提供一種大氣壓電漿產生 器，藉由控制到達待處理之物體表面的離子與電子的數 量來壓制靜電的發生。 根據上述與其它目的，本發明提出一種大氣壓電漿 產生器，係藉著將一氣體注入一陰極與一陽極之間而產 生電漿，並用產生的電漿去處理一物體的一表面，其中 分別供應不同頻率之交流電電源到陰極與陽極，以分別 控制電漿的電位以及陰極與陽極的電位間差異。 陰極的面積與陽極的面積可不同。而大氣壓電漿產 生器還包括一互補電極，與物體的一底部分離一預定距 離，以幫助電漿往物體移動 根據本發明，可分別控制到達待處理之物體表面的 離子與電子的數量，以壓制靜電的發生。11372pif.ptd Page 5 200400781 V. Description of the Invention (2) The number of electrons 52 on the surface of the body 70 is impossible. Therefore, due to the difference between the number of ions 42 and the number of electrons 52 reaching the surface of the object 70, high-potential static electricity occurs. Especially if the surface of the object 70 is composed of a conductor and an insulator (for example, a metal layer pattern is formed on the insulating layer), an inferior pattern will occur due to electrostatic discharge. That is, when When a conventional atmospheric piezo processor is used to change the surface shape of an object to be treated or to remove pollutants and particles, the object may be injured by a high static discharge on the surface of the object and the status of the object (status). SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an atmospheric piezoelectric plasma generator that suppresses the occurrence of static electricity by controlling the number of ions and electrons reaching the surface of an object to be treated. According to the above and other objects, the present invention provides an atmospheric piezoelectric plasma generator, which generates a plasma by injecting a gas between a cathode and an anode, and uses the generated plasma to treat a surface of an object, wherein Supply AC power of different frequencies to the cathode and anode to control the potential of the plasma and the difference between the potential of the cathode and anode. The area of the cathode may differ from that of the anode. The atmospheric piezoelectric plasma generator also includes a complementary electrode that is separated from a bottom of the object by a predetermined distance to help the plasma move toward the object. According to the present invention, the number of ions and electrons that reach the surface of the object to be treated can be controlled separately. Suppresses the occurrence of static electricity.
11372pi f.ptd 第6頁 20040078111372pi f.ptd p. 6 200400781
為讓本發明之上O+L -i -U- / L. 明顯易懂，下文特舉較二的：特=、和優點能更 詳細說明如下： 佳實靶例，並配合所附圖式，作 實施方式 本發明將以附圖更詳細 而且，本發明能在多種不同 本貫施方式所提出的内容。 施例可使揭露完整傳達本發 在圖示中，為了較清楚會誇 瞭解，會使用相同的圖示標 示相同的構件。 描述本發明之較佳實施例。 的形式下實施，而非限定於 更確切地說，這些提出的實 明之範圍給熟習此技藝者。 大構件的外型。而為有助於 號’其中在共有的圖示裡標 抑第3圖係依照本發明之一較佳實施例之大氣壓電漿產 生器（a 一t'ospheric pressure plasma generator)以及第 4圖所示係電位與一物體距離第3圖之大氣壓電漿產生器 的距離之關係圖。請參照第3圖與第4圖，本發明的大氣 壓電聚產生器會供應一頻率fl的交流電（alternating current，簡稱AC)電源140與一頻率f2的交流電電源150 到一陰極110與一陽極50。而頻率fl與f2之範圍在幾十Hz 到幾百k Η z之間。然後，可裝設一帶通濾波器（b a n d p a s s filter，簡稱BPF)145與155到交流電電源140與交流電電 源1 5 0中。之後，在大氣狀態中將氦氣、氬氣、氮氣、氧 氣或/及其族群之氣體注入一氣體供應洞（gas apply ho 1 e ) 1 3 0中作為一單一氣體或混合氣體相，以產生電漿 1 6 0。此時，可藉由分別供應不同頻率之交流電電源1 4 0In order to make the O + L -i -U- / L. of the present invention obvious and easy to understand, the following two special ones are mentioned below: special =, and advantages can be explained in more detail as follows: Jiashi target example, with the accompanying drawings As an embodiment, the present invention will be described in more detail with reference to the accompanying drawings. Moreover, the present invention can be proposed in various different embodiments. The embodiment can make the disclosure fully convey the present invention. In the illustration, for the sake of clarity, the same components will be indicated by the same icon. A preferred embodiment of the present invention will be described. Rather than being limited to the scope of these proposed explanations to those skilled in the art. The appearance of large components. In order to help the number, in which the third picture is shown in the common diagram, the third diagram is a t'ospheric pressure plasma generator according to a preferred embodiment of the present invention and the fourth diagram Shows the relationship between the potential and the distance of an object from the atmospheric piezoelectric plasma generator in Figure 3. Please refer to FIGS. 3 and 4. The atmospheric piezoelectric polymerizer of the present invention will supply an alternating current (AC) power source 140 with a frequency fl and an alternating current power source 150 with a frequency f2 to a cathode 110 and an anode 50. . The range of frequencies fl and f2 is between tens of Hz and hundreds of k k z. Then, a band pass filter (b a n d p a s s filter (BPF)) 145 and 155 can be installed in the AC power source 140 and the AC power source 150. Then, in the atmospheric state, helium, argon, nitrogen, oxygen or / and its gas is injected into a gas supply hole (gas apply ho 1 e) 1 30 as a single gas or mixed gas phase to produce Plasma 1 6 0. At this time, AC power supplies of different frequencies can be supplied separately.
11372pif.ptd 第7頁 200400781 五、發明說明（4) 與1 5 0到陰極1 1 0與陽極丨2 〇，來分別控制電漿1 6 〇的電位 與陰極1 1 0和陽極1 2 〇的電位間差異。也就是說，如第4圖 所示’可藉由分別控制控制值1與2來分開控制電位。藉 由分別控制電漿1 6 0的電位與陰極1 1 〇和陽極1 2 0的電位間 差異’可分別控制到達待處理物體1 7 〇 —表面之離子1 4 2 與電子152的數量，此物體17〇的移動方向如第4圖之箭號 (arrow)所示。因此，物體17〇表面的電性（eiectrical characteristic)可維持在中性（neutrai)。另外，產生 大氣壓電漿時，因可避免於物體170表面發生靜電，故不 會被有關物體1 7 0表面及狀態（s t a t u s )傷害到物體1 7 0。 田更特別的是，請再參照第4圖，如果增加控制值1 ， 大量離子142將會遷移至陰極11〇，且到達物體17〇表面之 離子1 4 2數量將會減少。因此，可藉由控制控制值1，來 控制到達物體1 7 0表面之離子1 4 2數量。此外，如果增加 控制值2 ’大量電子152將會遷移至陽極12〇，且到達物體 1^0表面之電子丨52數量將會減少。因此，可藉由控制控 $值2 ’來控制到達物體17〇表面之電子152數量。也就是 j 為了使物體1 7 〇表面上的靜電減到最少，可藉由控制 =制值1與2來維持物體17〇表面的電性為中性狀態。另 陰極1 1 0與陽極丨2 〇的面積可不同，以便控制到達物 一 ^表面之離子142與電子152的數量於一預定範圍内。 第5圖係依照本發明之另一較佳實施之大氣壓電漿 產生器。 —般於表面處理使用電漿、離子與電子可藉由根據11372pif.ptd Page 7 200400781 V. Description of the invention (4) and 150 to the cathode 1 1 0 and anode 丨 2 to control the potential of the plasma 1 6 〇 and the cathode 1 10 and anode 1 2 〇 Difference between potentials. That is, as shown in Fig. 4, the potentials can be controlled separately by controlling the control values 1 and 2 separately. By controlling the difference between the potential of the plasma 160 and the potential of the cathode 110 and the anode 120 respectively, the number of ions 1 4 2 and electrons 152 reaching the surface to be treated can be controlled separately. The moving direction of the object 17 is shown by the arrow in FIG. 4. Therefore, the eiectrical characteristic of the surface of the object 17 can be maintained at a neutral (neutrai). In addition, when generating an atmospheric piezoelectric slurry, static electricity can be prevented from occurring on the surface of the object 170, so the object 170 will not be harmed by the surface and state of the object 170 (s t a t u s). Tian is more special. Please refer to Figure 4 again. If the control value 1 is increased, a large number of ions 142 will migrate to the cathode 11 and the number of ions 1 4 2 reaching the surface of the object 17 will decrease. Therefore, by controlling the control value 1, the number of ions 1 4 2 reaching the surface of the object 170 can be controlled. In addition, if the control value 2 'is increased, a large number of electrons 152 will migrate to the anode 12o, and the number of electrons 52 reaching the surface of the object 1 ^ 0 will decrease. Therefore, the number of electrons 152 reaching the surface of the object 17 can be controlled by controlling the value of 2 '. That is, in order to minimize the static electricity on the surface of the object 170, the electrical property of the surface of the object 17 can be maintained in a neutral state by controlling the values 1 and 2. In addition, the areas of the cathode 110 and the anode 20 may be different, so as to control the number of ions 142 and electrons 152 reaching the surface of the object within a predetermined range. Fig. 5 is an atmospheric piezoelectric plasma generator according to another preferred embodiment of the present invention. —Generally, plasma, ions and electrons can be used for surface treatment.
200400781 五、發明說明（5) 地心引力與所供應的氣體之流動到達待處理物體的表 面。而第5圖之大氣壓電漿產生器本身就可藉由使用一互 補電極1 8 0幫助離子與電子到達物體的表面，其中互補電 極1 8 0與物體1 7 0的一底部分離一預定距離。 根據本發明，可分別控制電漿的電位以及陰極與陽 極的電位間差異，以便控制到達待處理之物體表面之離 子與電子的數量。所以，可壓制靜電之發生。 因此，可在不管物體的特徵或物體表面型態下使用 一大氣壓電漿產生器。特別是改變物體的表面型態或從 物體表面去除污染物與微粒時不會傷害到物體，甚至是 在半導體或液晶顯示器製造程序中當要在一絕緣層上圖 案化一導體層時。因為在處理物體面時不會傷害到物 體，所以能降低製造成本，並且因使用本發明之大氣壓 電漿產生器可簡化製程，而增產量（yield)。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍内，當可作各種之更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。200400781 V. Description of the invention (5) The gravity and the flow of the supplied gas reach the surface of the object to be treated. The atmospheric piezoelectric plasma generator in FIG. 5 can help ions and electrons reach the surface of the object by using a complementary electrode 180, wherein the complementary electrode 180 is separated from a bottom of the object 170 by a predetermined distance. According to the present invention, the potential of the plasma and the difference between the potential of the cathode and the anode can be controlled separately to control the number of ions and electrons reaching the surface of the object to be treated. Therefore, the occurrence of static electricity can be suppressed. Therefore, an atmospheric piezoelectric slurry generator can be used regardless of the characteristics of the object or the shape of the surface of the object. In particular, changing the surface shape of an object or removing pollutants and particles from the surface of the object will not harm the object, even when a semiconductor or liquid crystal display manufacturing process is to pattern a conductor layer on an insulating layer. Because it will not hurt the object when processing the object surface, the manufacturing cost can be reduced, and the use of the atmospheric pressure plasma generator of the present invention can simplify the manufacturing process and increase yield. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.
11372pif.ptd 第9頁 200400781 圖式簡單說明 圖式簡單說明 第1圖所示係習知一種大氣壓電漿產生器； 第2圖所示係電位與一物體距離第1圖之大氣壓電漿 產生器的距離之關係圖； 第3圖係依照本發明之一較佳實施例之大氣壓電漿產 生器； 第4圖所示係電位與一物體距離第3圖之大氣壓電漿 產生器的距離之關係圖；以及 第5圖係依照本發明之另一較佳實施例之大氣壓電漿 產生器。 圖式標不說明 1 0，1 1 0 :陰極 2 0，1 2 0 :陽極 ^ 3 0，1 3 0 :氣體供應洞 4 0 ，1 4 0 ，1 5 0 :交流電電源 42 ， 142 :離子 5 0 :接地電壓 52 ，1 52 :電子 6 0 ，1 6 0 :電漿 7 0，1 7 0 :物體 1 4 5 ，1 5 5 :帶通濾波器 1 8 0 :互補電極 f 1 ，f 2 :頻率11372pif.ptd Page 9 200400781 Brief description of the diagram Brief description of the diagram The first diagram shows a conventional type of atmospheric piezoelectric plasma generator; the second diagram shows the potential and the distance between an object and the first atmospheric piezoelectric plasma generator Fig. 3 is the relationship between the atmospheric piezoelectric plasma generator according to a preferred embodiment of the present invention; Fig. 4 is the relationship between the potential shown in Fig. 4 and the distance from an object to the atmospheric piezoelectric plasma generator in Fig. 3 FIG. 5 and FIG. 5 show an atmospheric piezoelectric plasma generator according to another preferred embodiment of the present invention. The drawing symbols do not explain 1 0, 1 1 0: cathode 2 0, 1 2 0: anode ^ 3 0, 1 3 0: gas supply hole 40, 1 4 0, 1 50: AC power source 42, 142: ions 5 0: Ground voltage 52, 1 52: Electronics 6 0, 16 0: Plasma 7 0, 1 7 0: Object 1 4 5, 1 5 5: Band-pass filter 1 8 0: Complementary electrodes f 1, f 2: frequency
11372pif.ptd 第10頁11372pif.ptd Page 10