JP7550868B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP7550868B2
JP7550868B2 JP2022550446A JP2022550446A JP7550868B2 JP 7550868 B2 JP7550868 B2 JP 7550868B2 JP 2022550446 A JP2022550446 A JP 2022550446A JP 2022550446 A JP2022550446 A JP 2022550446A JP 7550868 B2 JP7550868 B2 JP 7550868B2
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dielectric film
metal
semiconductor device
forming
metal oxide
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JPWO2022059482A1 (https=
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浩二 秋山
知大 田村
フィリップ ゴベール
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Tokyo Electron Ltd
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    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
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    • H10D1/00—Resistors, capacitors or inductors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D64/01—Manufacture or treatment
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
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    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
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    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
JP2022550446A 2020-09-15 2021-09-01 半導体装置の製造方法 Active JP7550868B2 (ja)

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JP2020154747 2020-09-15
JP2020154747 2020-09-15
PCT/JP2021/032045 WO2022059482A1 (ja) 2020-09-15 2021-09-01 半導体装置の製造方法

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JPWO2022059482A1 JPWO2022059482A1 (https=) 2022-03-24
JP7550868B2 true JP7550868B2 (ja) 2024-09-13

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US (1) US12349434B2 (https=)
JP (1) JP7550868B2 (https=)
KR (2) KR102893655B1 (https=)
CN (1) CN116075924A (https=)
TW (1) TWI906356B (https=)
WO (1) WO2022059482A1 (https=)

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
CN118591281A (zh) * 2024-08-06 2024-09-03 武汉新芯集成电路股份有限公司 电容器及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079186A (ja) 2003-08-28 2005-03-24 Sharp Corp 微粒子含有体およびその製造方法、メモリ機能体、メモリ素子並びに電子機器
JP2007294874A (ja) 2006-03-31 2007-11-08 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
US20080246078A1 (en) 2007-04-03 2008-10-09 Samsung Electronics Co., Ltd. Charge trap flash memory device and memory card and system including the same
JP2014229680A (ja) 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法

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JPS56161699A (en) * 1980-05-16 1981-12-12 Denki Kagaku Kogyo Kk Method of mounting electric part and insulating heat dissipating sheet used therefor
JPS56161669A (en) * 1980-05-16 1981-12-12 Nec Corp Manufacture of semiconductor device
JP3628041B2 (ja) * 1994-06-29 2005-03-09 テキサス インスツルメンツ インコーポレイテツド 半導体装置の製造方法
KR100215861B1 (ko) * 1996-03-13 1999-08-16 구본준 유전체 박막 제조방법 및 이를 이용한 반도체 장치제조방법
KR100252055B1 (ko) * 1997-12-11 2000-04-15 윤종용 커패시터를 포함하는 반도체장치 및 그 제조방법
US20050142715A1 (en) * 2003-12-26 2005-06-30 Fujitsu Limited Semiconductor device with high dielectric constant insulator and its manufacture
JP4909552B2 (ja) * 2005-09-12 2012-04-04 旭硝子株式会社 電荷保持特性に優れた不揮発性半導体記憶素子の製造方法
JP2007088301A (ja) 2005-09-22 2007-04-05 Toshiba Corp 半導体装置および半導体装置の製造方法
US20120064690A1 (en) 2010-09-10 2012-03-15 Elpida Memory, Inc. Method for manufacturing semiconductor device
US9275853B2 (en) * 2013-07-29 2016-03-01 Applied Materials, Inc. Method of adjusting a transistor gate flat band voltage with addition of AL203 on nitrided silicon channel
KR102470206B1 (ko) * 2017-10-13 2022-11-23 삼성디스플레이 주식회사 금속 산화막의 제조 방법 및 금속 산화막을 포함하는 표시 소자
JP2024161669A (ja) 2023-05-08 2024-11-20 三菱電機株式会社 Ｐｉｏ装置およびｐｉｏ装置の寿命判定方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079186A (ja) 2003-08-28 2005-03-24 Sharp Corp 微粒子含有体およびその製造方法、メモリ機能体、メモリ素子並びに電子機器
JP2007294874A (ja) 2006-03-31 2007-11-08 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
US20080246078A1 (en) 2007-04-03 2008-10-09 Samsung Electronics Co., Ltd. Charge trap flash memory device and memory card and system including the same
JP2014229680A (ja) 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法

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JPWO2022059482A1 (https=) 2022-03-24
US20230326977A1 (en) 2023-10-12
KR20250174993A (ko) 2025-12-15
KR20230066333A (ko) 2023-05-15
CN116075924A (zh) 2023-05-05
TW202223988A (zh) 2022-06-16
KR102893655B1 (ko) 2025-12-01
US12349434B2 (en) 2025-07-01
TWI906356B (zh) 2025-12-01

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