JP7550757B2 - 薄膜sawデバイス - Google Patents
薄膜sawデバイス Download PDFInfo
- Publication number
- JP7550757B2 JP7550757B2 JP2021532034A JP2021532034A JP7550757B2 JP 7550757 B2 JP7550757 B2 JP 7550757B2 JP 2021532034 A JP2021532034 A JP 2021532034A JP 2021532034 A JP2021532034 A JP 2021532034A JP 7550757 B2 JP7550757 B2 JP 7550757B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- functional layer
- saw device
- tcf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018131946.0 | 2018-12-12 | ||
| DE102018131946.0A DE102018131946A1 (de) | 2018-12-12 | 2018-12-12 | Dünnfilm-SAW-Vorrichtung |
| PCT/EP2019/083119 WO2020120175A1 (en) | 2018-12-12 | 2019-11-29 | Thin film saw device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022511074A JP2022511074A (ja) | 2022-01-28 |
| JP2022511074A5 JP2022511074A5 (https=) | 2022-11-10 |
| JP7550757B2 true JP7550757B2 (ja) | 2024-09-13 |
Family
ID=68766748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021532034A Active JP7550757B2 (ja) | 2018-12-12 | 2019-11-29 | 薄膜sawデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11936362B2 (https=) |
| EP (1) | EP3895309B1 (https=) |
| JP (1) | JP7550757B2 (https=) |
| CN (2) | CN113169720B (https=) |
| DE (1) | DE102018131946A1 (https=) |
| TW (1) | TW202110087A (https=) |
| WO (1) | WO2020120175A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017111448B4 (de) * | 2017-05-24 | 2022-02-10 | RF360 Europe GmbH | SAW-Vorrichtung mit unterdrückten Störmodensignalen |
| KR102844657B1 (ko) * | 2023-07-18 | 2025-08-11 | (주)와이솔 | 개선된 q성능을 갖는 표면탄성파 소자 및 그 제조 방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078739A (ja) | 2006-09-19 | 2008-04-03 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
| JP2017532758A (ja) | 2014-08-01 | 2017-11-02 | ソイテック | 無線周波アプリケーションの構造 |
| WO2017207911A1 (fr) | 2016-06-02 | 2017-12-07 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| WO2018002504A1 (fr) | 2016-06-30 | 2018-01-04 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| WO2018163842A1 (ja) | 2017-03-09 | 2018-09-13 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132760A (ja) * | 1992-10-21 | 1994-05-13 | Murata Mfg Co Ltd | 弾性表面波装置 |
| JP5637136B2 (ja) * | 2009-07-07 | 2014-12-10 | 株式会社村田製作所 | 弾性波デバイスおよび弾性波デバイスの製造方法 |
| JP5429200B2 (ja) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
| TW201334071A (zh) | 2012-02-07 | 2013-08-16 | Ritedia Corp | 光透射氮化鋁層及相關裝置及方法 |
| WO2013191122A1 (ja) * | 2012-06-22 | 2013-12-27 | 株式会社村田製作所 | 弾性波装置 |
| FR3026582A1 (fr) | 2014-09-29 | 2016-04-01 | Commissariat Energie Atomique | Circuit resonant a frequence et a impedance variables |
| JP6360847B2 (ja) * | 2016-03-18 | 2018-07-18 | 太陽誘電株式会社 | 弾性波デバイス |
| DE102017111448B4 (de) | 2017-05-24 | 2022-02-10 | RF360 Europe GmbH | SAW-Vorrichtung mit unterdrückten Störmodensignalen |
| CN107733395A (zh) * | 2017-11-14 | 2018-02-23 | 安徽云塔电子科技有限公司 | 一种压电谐振器和压电谐振器的制备方法 |
-
2018
- 2018-12-12 DE DE102018131946.0A patent/DE102018131946A1/de active Pending
-
2019
- 2019-11-29 EP EP19813482.7A patent/EP3895309B1/en active Active
- 2019-11-29 CN CN201980082642.1A patent/CN113169720B/zh active Active
- 2019-11-29 TW TW108143571A patent/TW202110087A/zh unknown
- 2019-11-29 US US17/294,630 patent/US11936362B2/en active Active
- 2019-11-29 CN CN202511114996.3A patent/CN121012456A/zh active Pending
- 2019-11-29 WO PCT/EP2019/083119 patent/WO2020120175A1/en not_active Ceased
- 2019-11-29 JP JP2021532034A patent/JP7550757B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008078739A (ja) | 2006-09-19 | 2008-04-03 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
| JP2017532758A (ja) | 2014-08-01 | 2017-11-02 | ソイテック | 無線周波アプリケーションの構造 |
| WO2017207911A1 (fr) | 2016-06-02 | 2017-12-07 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| WO2018002504A1 (fr) | 2016-06-30 | 2018-01-04 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| WO2018163842A1 (ja) | 2017-03-09 | 2018-09-13 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US11936362B2 (en) | 2024-03-19 |
| JP2022511074A (ja) | 2022-01-28 |
| EP3895309A1 (en) | 2021-10-20 |
| WO2020120175A1 (en) | 2020-06-18 |
| US20210320642A1 (en) | 2021-10-14 |
| CN113169720B (zh) | 2025-08-26 |
| CN113169720A (zh) | 2021-07-23 |
| CN121012456A (zh) | 2025-11-25 |
| TW202110087A (zh) | 2021-03-01 |
| EP3895309B1 (en) | 2025-09-03 |
| DE102018131946A1 (de) | 2020-06-18 |
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