TW202110087A - 薄膜表面聲波（saw）裝置 - Google Patents

薄膜表面聲波（saw）裝置 Download PDF

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Publication number
TW202110087A
TW202110087A TW108143571A TW108143571A TW202110087A TW 202110087 A TW202110087 A TW 202110087A TW 108143571 A TW108143571 A TW 108143571A TW 108143571 A TW108143571 A TW 108143571A TW 202110087 A TW202110087 A TW 202110087A
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TW
Taiwan
Prior art keywords
layer
piezoelectric
saw device
thin film
thickness
Prior art date
Application number
TW108143571A
Other languages
English (en)
Chinese (zh)
Inventor
馬提亞 納普
英戈 布萊爾
馬庫斯 豪瑟
Original Assignee
德商Ｒｆ３６０歐洲股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商Ｒｆ３６０歐洲股份有限公司 filed Critical 德商Ｒｆ３６０歐洲股份有限公司
Publication of TW202110087A publication Critical patent/TW202110087A/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
TW108143571A 2018-12-12 2019-11-29 薄膜表面聲波（saw）裝置 TW202110087A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018131946.0 2018-12-12
DE102018131946.0A DE102018131946A1 (de) 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung

Publications (1)

Publication Number Publication Date
TW202110087A true TW202110087A (zh) 2021-03-01

Family

ID=68766748

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108143571A TW202110087A (zh) 2018-12-12 2019-11-29 薄膜表面聲波（saw）裝置

Country Status (7)

Country Link
US (1) US11936362B2 (https=)
EP (1) EP3895309B1 (https=)
JP (1) JP7550757B2 (https=)
CN (2) CN113169720B (https=)
DE (1) DE102018131946A1 (https=)
TW (1) TW202110087A (https=)
WO (1) WO2020120175A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017111448B4 (de) * 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
KR102844657B1 (ko) * 2023-07-18 2025-08-11 (주)와이솔 개선된 q성능을 갖는 표면탄성파 소자 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132760A (ja) * 1992-10-21 1994-05-13 Murata Mfg Co Ltd 弾性表面波装置
JP2008078739A (ja) * 2006-09-19 2008-04-03 Fujitsu Media Device Kk 弾性波デバイスおよびフィルタ
JP5637136B2 (ja) * 2009-07-07 2014-12-10 株式会社村田製作所 弾性波デバイスおよび弾性波デバイスの製造方法
JP5429200B2 (ja) * 2010-05-17 2014-02-26 株式会社村田製作所 複合圧電基板の製造方法および圧電デバイス
TW201334071A (zh) 2012-02-07 2013-08-16 Ritedia Corp 光透射氮化鋁層及相關裝置及方法
WO2013191122A1 (ja) * 2012-06-22 2013-12-27 株式会社村田製作所 弾性波装置
FR3024587B1 (fr) 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
FR3026582A1 (fr) 2014-09-29 2016-04-01 Commissariat Energie Atomique Circuit resonant a frequence et a impedance variables
JP6360847B2 (ja) * 2016-03-18 2018-07-18 太陽誘電株式会社 弾性波デバイス
FR3052298B1 (fr) * 2016-06-02 2018-07-13 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
FR3053532B1 (fr) * 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
KR102294196B1 (ko) * 2017-03-09 2021-08-27 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
DE102017111448B4 (de) 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
CN107733395A (zh) * 2017-11-14 2018-02-23 安徽云塔电子科技有限公司 一种压电谐振器和压电谐振器的制备方法

Also Published As

Publication number Publication date
US11936362B2 (en) 2024-03-19
JP2022511074A (ja) 2022-01-28
JP7550757B2 (ja) 2024-09-13
EP3895309A1 (en) 2021-10-20
WO2020120175A1 (en) 2020-06-18
US20210320642A1 (en) 2021-10-14
CN113169720B (zh) 2025-08-26
CN113169720A (zh) 2021-07-23
CN121012456A (zh) 2025-11-25
EP3895309B1 (en) 2025-09-03
DE102018131946A1 (de) 2020-06-18

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