JP2022511074A - 薄膜sawデバイス - Google Patents
薄膜sawデバイス Download PDFInfo
- Publication number
- JP2022511074A JP2022511074A JP2021532034A JP2021532034A JP2022511074A JP 2022511074 A JP2022511074 A JP 2022511074A JP 2021532034 A JP2021532034 A JP 2021532034A JP 2021532034 A JP2021532034 A JP 2021532034A JP 2022511074 A JP2022511074 A JP 2022511074A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- tcf
- thin film
- functional layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000002346 layers by function Substances 0.000 claims abstract description 53
- 230000000694 effects Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000013532 laser treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
0.005dP≦dD≦0.5dP。
2nm≦dD≦350nmに一致する。
50nm≦dC≦500nm。
-Siキャリア基板
-200nmのSiO2
-非圧電(non-piezoelectric)LTの基部上の50nmの損傷層
-600nmの圧電(piezoelectric)LT
-Al電極
CA キャリア基板(Siウェハ)
CL TCF補償層(SiO2層)
dC TCF補償層の厚さ
dF 機能層の厚さ
dP 圧電層の厚さ
EL IDT電極
FL 機能層
PL 圧電層
Claims (7)
- 薄膜SAWデバイスであって、
-キャリア基板(CA)と、
-TCF補償層(CL)と、
-圧電層(PL)と、
-前記圧電層の上部のIDT電極(EL)と
を備え、機能層(FL)が、圧電層とTCF補償層との間に配置され、
前記機能層の材料特性は、音響速度、密度、及び剛性の観点から、圧電効果を有することなく、それらが10%を超えて互いにずれないように前記圧電層の材料特性と一致する、薄膜SAWデバイス。 - 前記機能層は、
-前記圧電層のような同じ材料を備え、
-いかなる圧電効果も提供しない、
請求項1に記載の薄膜SAWデバイス。 - 前記圧電層は、厚さdPを有するLT又はLNの単結晶層であり、
-前記機能層は、同じ材料であるが圧電効果を有することのない結晶層であり、
-前記機能層の厚さdFについて、以下が有効である:
0.005dP≦dF≦0.50dP、
請求項1又は2に記載の薄膜SAWデバイス。 - 前記TCF補償層(CL)よりも高い音速を有する1つ以上の追加層が、前記キャリア基板(CA)と前記TCF補償層(CL)との間に追加される、請求項1~3のうちのいずれか一項に記載の薄膜SAWデバイス。
- 前記圧電層は、400~700nmの厚さdPのタンタル酸リチウムLTの単結晶層であり、
-前記機能層は、同じ材料であるが圧電効果を有することのない結晶LT層であり、前記機能層の厚さdFは、
2nm≦dF≦350nmに一致する、
請求項1~4のうちのいずれか一項に記載の薄膜SAWデバイス。 - 前記TCF補償層(CL)は、
50nm≦dC≦500nm
による厚さdCを有するSiO2層を備える、請求項1~5のうちのいずれか一項に記載の薄膜SAWデバイス。 - 薄膜SAWデバイスを製造する方法であって、
-キャリア基板(CA)と、
-TCF補償層(CL)と、
-機能層(FL)と、
-圧電層(PL)と、
-前記圧電層の上部のIDT電極(EL)と
を備え、前記方法は、その上面に一体的に形成された機能層FLを有する圧電ウェハの、前記キャリア基板上に配置された下にある前記TCF補償層CLに対するウェハ接合を備え、
前記機能層(FL)は、イオン注入(ion implantation)、温度処理(temperature treatment)、又はレーザ処理によって、ウェハ接合より前に形成される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018131946.0A DE102018131946A1 (de) | 2018-12-12 | 2018-12-12 | Dünnfilm-SAW-Vorrichtung |
DE102018131946.0 | 2018-12-12 | ||
PCT/EP2019/083119 WO2020120175A1 (en) | 2018-12-12 | 2019-11-29 | Thin film saw device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022511074A true JP2022511074A (ja) | 2022-01-28 |
JPWO2020120175A5 JPWO2020120175A5 (ja) | 2022-11-10 |
Family
ID=68766748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021532034A Pending JP2022511074A (ja) | 2018-12-12 | 2019-11-29 | 薄膜sawデバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US11936362B2 (ja) |
EP (1) | EP3895309A1 (ja) |
JP (1) | JP2022511074A (ja) |
CN (1) | CN113169720A (ja) |
DE (1) | DE102018131946A1 (ja) |
TW (1) | TW202110087A (ja) |
WO (1) | WO2020120175A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017111448B4 (de) * | 2017-05-24 | 2022-02-10 | RF360 Europe GmbH | SAW-Vorrichtung mit unterdrückten Störmodensignalen |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011004665A1 (ja) * | 2009-07-07 | 2011-01-13 | 株式会社村田製作所 | 弾性波デバイスおよび弾性波デバイスの製造方法 |
JP5429200B2 (ja) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
TW201334071A (zh) | 2012-02-07 | 2013-08-16 | Ritedia Corp | 光透射氮化鋁層及相關裝置及方法 |
JP5835480B2 (ja) * | 2012-06-22 | 2015-12-24 | 株式会社村田製作所 | 弾性波装置 |
FR3024587B1 (fr) | 2014-08-01 | 2018-01-26 | Soitec | Procede de fabrication d'une structure hautement resistive |
FR3026582A1 (fr) | 2014-09-29 | 2016-04-01 | Commissariat Energie Atomique | Circuit resonant a frequence et a impedance variables |
JP6360847B2 (ja) * | 2016-03-18 | 2018-07-18 | 太陽誘電株式会社 | 弾性波デバイス |
FR3052298B1 (fr) * | 2016-06-02 | 2018-07-13 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
FR3053532B1 (fr) * | 2016-06-30 | 2018-11-16 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
JP6658957B2 (ja) | 2017-03-09 | 2020-03-04 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
DE102017111448B4 (de) | 2017-05-24 | 2022-02-10 | RF360 Europe GmbH | SAW-Vorrichtung mit unterdrückten Störmodensignalen |
-
2018
- 2018-12-12 DE DE102018131946.0A patent/DE102018131946A1/de active Pending
-
2019
- 2019-11-29 WO PCT/EP2019/083119 patent/WO2020120175A1/en unknown
- 2019-11-29 TW TW108143571A patent/TW202110087A/zh unknown
- 2019-11-29 CN CN201980082642.1A patent/CN113169720A/zh active Pending
- 2019-11-29 JP JP2021532034A patent/JP2022511074A/ja active Pending
- 2019-11-29 EP EP19813482.7A patent/EP3895309A1/en active Pending
- 2019-11-29 US US17/294,630 patent/US11936362B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2020120175A1 (en) | 2020-06-18 |
US20210320642A1 (en) | 2021-10-14 |
CN113169720A (zh) | 2021-07-23 |
DE102018131946A1 (de) | 2020-06-18 |
TW202110087A (zh) | 2021-03-01 |
EP3895309A1 (en) | 2021-10-20 |
US11936362B2 (en) | 2024-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20240088863A1 (en) | Elastic wave device and method for manufacturing the same | |
US7414349B2 (en) | Piezoelectric vibrator, filter using the same and its adjusting method | |
JP5879652B2 (ja) | 弾性波デバイスを製造するための方法 | |
EP2892153B1 (en) | Piezoelectric acoustic resonator with adjustable temperature compensation capability | |
US7138889B2 (en) | Single-port multi-resonator acoustic resonator device | |
US7737806B2 (en) | Piezoelectric thin-film resonator and filter | |
JP2004304704A (ja) | 薄膜音響共振子、及び、薄膜音響共振子回路 | |
JPWO2005088835A1 (ja) | 分波器及び弾性表面波フィルタ | |
US5320865A (en) | Method of manufacturing a surface acoustic wave device | |
CN107317561A (zh) | 体声波谐振器及其制造方法 | |
JP2011135576A (ja) | エレクトレットを備える音響共振器、および前記共振器を製造する方法、切り替え可能な結合共振器フィルターへの応用 | |
JP2022511074A (ja) | 薄膜sawデバイス | |
WO2022087825A1 (zh) | 谐振器及其制作方法、滤波器、电子设备 | |
WO2019082806A1 (ja) | 弾性波素子 | |
JP2000312129A (ja) | 圧電共振子およびフィルタ | |
CN117118388A (zh) | 一种多层复合晶圆及薄膜弹性波器件 | |
WO2020133004A1 (zh) | 一种薄膜体声波谐振器 | |
JP2004235886A (ja) | 圧電薄膜素子 | |
JP2000196404A (ja) | 圧電共振子 | |
US20210211114A1 (en) | Surface acoustic wave device and manufacturing method thereof | |
JP2005142902A (ja) | 弾性表面波素子用基板 | |
JP4693406B2 (ja) | 圧電薄膜デバイス及びその製造方法 | |
JP2008182511A (ja) | バルク音響振動子、その周波数温度特性の補償方法、及び、その製造方法 | |
JP2003060478A (ja) | 圧電薄膜共振子、その製造方法、および、その圧電薄膜共振子を用いたフィルタならびに電子機器 | |
TW202404137A (zh) | 絕緣體上壓電(poi)底材及其製作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221031 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221031 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20230106 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20230509 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240423 |