CN113169720B - 薄膜saw器件 - Google Patents

薄膜saw器件

Info

Publication number
CN113169720B
CN113169720B CN201980082642.1A CN201980082642A CN113169720B CN 113169720 B CN113169720 B CN 113169720B CN 201980082642 A CN201980082642 A CN 201980082642A CN 113169720 B CN113169720 B CN 113169720B
Authority
CN
China
Prior art keywords
layer
piezoelectric
functional layer
tcf
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980082642.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113169720A (zh
Inventor
M·纳普
I·布莱尔
M·豪泽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RF360 Singapore Pte Ltd
Original Assignee
RF360 Europe GmbH
RF360 Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RF360 Europe GmbH, RF360 Singapore Pte Ltd filed Critical RF360 Europe GmbH
Priority to CN202511114996.3A priority Critical patent/CN121012456A/zh
Publication of CN113169720A publication Critical patent/CN113169720A/zh
Application granted granted Critical
Publication of CN113169720B publication Critical patent/CN113169720B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN201980082642.1A 2018-12-12 2019-11-29 薄膜saw器件 Active CN113169720B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511114996.3A CN121012456A (zh) 2018-12-12 2019-11-29 薄膜saw器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018131946.0 2018-12-12
DE102018131946.0A DE102018131946A1 (de) 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung
PCT/EP2019/083119 WO2020120175A1 (en) 2018-12-12 2019-11-29 Thin film saw device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511114996.3A Division CN121012456A (zh) 2018-12-12 2019-11-29 薄膜saw器件

Publications (2)

Publication Number Publication Date
CN113169720A CN113169720A (zh) 2021-07-23
CN113169720B true CN113169720B (zh) 2025-08-26

Family

ID=68766748

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980082642.1A Active CN113169720B (zh) 2018-12-12 2019-11-29 薄膜saw器件
CN202511114996.3A Pending CN121012456A (zh) 2018-12-12 2019-11-29 薄膜saw器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202511114996.3A Pending CN121012456A (zh) 2018-12-12 2019-11-29 薄膜saw器件

Country Status (7)

Country Link
US (1) US11936362B2 (https=)
EP (1) EP3895309B1 (https=)
JP (1) JP7550757B2 (https=)
CN (2) CN113169720B (https=)
DE (1) DE102018131946A1 (https=)
TW (1) TW202110087A (https=)
WO (1) WO2020120175A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017111448B4 (de) * 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
KR102844657B1 (ko) * 2023-07-18 2025-08-11 (주)와이솔 개선된 q성능을 갖는 표면탄성파 소자 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052298A1 (fr) * 2016-06-02 2017-12-08 Soitec Silicon On Insulator Structure hybride pour dispositif a ondes acoustiques de surface
FR3053532A1 (fr) * 2016-06-30 2018-01-05 Soitec Structure hybride pour dispositif a ondes acoustiques de surface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132760A (ja) * 1992-10-21 1994-05-13 Murata Mfg Co Ltd 弾性表面波装置
JP2008078739A (ja) * 2006-09-19 2008-04-03 Fujitsu Media Device Kk 弾性波デバイスおよびフィルタ
JP5637136B2 (ja) * 2009-07-07 2014-12-10 株式会社村田製作所 弾性波デバイスおよび弾性波デバイスの製造方法
JP5429200B2 (ja) * 2010-05-17 2014-02-26 株式会社村田製作所 複合圧電基板の製造方法および圧電デバイス
TW201334071A (zh) 2012-02-07 2013-08-16 Ritedia Corp 光透射氮化鋁層及相關裝置及方法
WO2013191122A1 (ja) * 2012-06-22 2013-12-27 株式会社村田製作所 弾性波装置
FR3024587B1 (fr) 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
FR3026582A1 (fr) 2014-09-29 2016-04-01 Commissariat Energie Atomique Circuit resonant a frequence et a impedance variables
JP6360847B2 (ja) * 2016-03-18 2018-07-18 太陽誘電株式会社 弾性波デバイス
KR102294196B1 (ko) * 2017-03-09 2021-08-27 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
DE102017111448B4 (de) 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
CN107733395A (zh) * 2017-11-14 2018-02-23 安徽云塔电子科技有限公司 一种压电谐振器和压电谐振器的制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052298A1 (fr) * 2016-06-02 2017-12-08 Soitec Silicon On Insulator Structure hybride pour dispositif a ondes acoustiques de surface
FR3053532A1 (fr) * 2016-06-30 2018-01-05 Soitec Structure hybride pour dispositif a ondes acoustiques de surface

Also Published As

Publication number Publication date
US11936362B2 (en) 2024-03-19
JP2022511074A (ja) 2022-01-28
JP7550757B2 (ja) 2024-09-13
EP3895309A1 (en) 2021-10-20
WO2020120175A1 (en) 2020-06-18
US20210320642A1 (en) 2021-10-14
CN113169720A (zh) 2021-07-23
CN121012456A (zh) 2025-11-25
TW202110087A (zh) 2021-03-01
EP3895309B1 (en) 2025-09-03
DE102018131946A1 (de) 2020-06-18

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Applicant before: Rf360 Europe LLC

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