DE102018131946A1 - Dünnfilm-SAW-Vorrichtung - Google Patents

Dünnfilm-SAW-Vorrichtung Download PDF

Info

Publication number
DE102018131946A1
DE102018131946A1 DE102018131946.0A DE102018131946A DE102018131946A1 DE 102018131946 A1 DE102018131946 A1 DE 102018131946A1 DE 102018131946 A DE102018131946 A DE 102018131946A DE 102018131946 A1 DE102018131946 A1 DE 102018131946A1
Authority
DE
Germany
Prior art keywords
layer
piezoelectric
saw device
thickness
tcf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102018131946.0A
Other languages
German (de)
English (en)
Inventor
Matthias Knapp
Ingo Bleyl
Markus Hauser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RF360 Singapore Pte Ltd
Original Assignee
RF360 Europe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RF360 Europe GmbH filed Critical RF360 Europe GmbH
Priority to DE102018131946.0A priority Critical patent/DE102018131946A1/de
Priority to EP19813482.7A priority patent/EP3895309B1/en
Priority to PCT/EP2019/083119 priority patent/WO2020120175A1/en
Priority to CN202511114996.3A priority patent/CN121012456A/zh
Priority to JP2021532034A priority patent/JP7550757B2/ja
Priority to TW108143571A priority patent/TW202110087A/zh
Priority to CN201980082642.1A priority patent/CN113169720B/zh
Priority to US17/294,630 priority patent/US11936362B2/en
Publication of DE102018131946A1 publication Critical patent/DE102018131946A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE102018131946.0A 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung Pending DE102018131946A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102018131946.0A DE102018131946A1 (de) 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung
EP19813482.7A EP3895309B1 (en) 2018-12-12 2019-11-29 Thin film saw device
PCT/EP2019/083119 WO2020120175A1 (en) 2018-12-12 2019-11-29 Thin film saw device
CN202511114996.3A CN121012456A (zh) 2018-12-12 2019-11-29 薄膜saw器件
JP2021532034A JP7550757B2 (ja) 2018-12-12 2019-11-29 薄膜ｓａｗデバイス
TW108143571A TW202110087A (zh) 2018-12-12 2019-11-29 薄膜表面聲波（saw）裝置
CN201980082642.1A CN113169720B (zh) 2018-12-12 2019-11-29 薄膜saw器件
US17/294,630 US11936362B2 (en) 2018-12-12 2019-11-29 Thin film saw device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102018131946.0A DE102018131946A1 (de) 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung

Publications (1)

Publication Number Publication Date
DE102018131946A1 true DE102018131946A1 (de) 2020-06-18

Family

ID=68766748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018131946.0A Pending DE102018131946A1 (de) 2018-12-12 2018-12-12 Dünnfilm-SAW-Vorrichtung

Country Status (7)

Country Link
US (1) US11936362B2 (https=)
EP (1) EP3895309B1 (https=)
JP (1) JP7550757B2 (https=)
CN (2) CN113169720B (https=)
DE (1) DE102018131946A1 (https=)
TW (1) TW202110087A (https=)
WO (1) WO2020120175A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017111448B4 (de) * 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
KR102844657B1 (ko) * 2023-07-18 2025-08-11 (주)와이솔 개선된 q성능을 갖는 표면탄성파 소자 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110278993A1 (en) * 2010-05-17 2011-11-17 Murata Manufacturing Co., Ltd. Method for manufacturing composite piezoelectric substrate and piezoelectric device
DE112010002856T5 (de) * 2009-07-07 2012-11-29 Murata Manufacturing Co., Ltd. Vorrichtung für elastische Wellen und Verfahren zur Herstellung einer solchen Vorrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132760A (ja) * 1992-10-21 1994-05-13 Murata Mfg Co Ltd 弾性表面波装置
JP2008078739A (ja) * 2006-09-19 2008-04-03 Fujitsu Media Device Kk 弾性波デバイスおよびフィルタ
TW201334071A (zh) 2012-02-07 2013-08-16 Ritedia Corp 光透射氮化鋁層及相關裝置及方法
WO2013191122A1 (ja) * 2012-06-22 2013-12-27 株式会社村田製作所 弾性波装置
FR3024587B1 (fr) 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
FR3026582A1 (fr) 2014-09-29 2016-04-01 Commissariat Energie Atomique Circuit resonant a frequence et a impedance variables
JP6360847B2 (ja) * 2016-03-18 2018-07-18 太陽誘電株式会社 弾性波デバイス
FR3052298B1 (fr) * 2016-06-02 2018-07-13 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
FR3053532B1 (fr) * 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
KR102294196B1 (ko) * 2017-03-09 2021-08-27 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
DE102017111448B4 (de) 2017-05-24 2022-02-10 RF360 Europe GmbH SAW-Vorrichtung mit unterdrückten Störmodensignalen
CN107733395A (zh) * 2017-11-14 2018-02-23 安徽云塔电子科技有限公司 一种压电谐振器和压电谐振器的制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010002856T5 (de) * 2009-07-07 2012-11-29 Murata Manufacturing Co., Ltd. Vorrichtung für elastische Wellen und Verfahren zur Herstellung einer solchen Vorrichtung
US20110278993A1 (en) * 2010-05-17 2011-11-17 Murata Manufacturing Co., Ltd. Method for manufacturing composite piezoelectric substrate and piezoelectric device

Also Published As

Publication number Publication date
US11936362B2 (en) 2024-03-19
JP2022511074A (ja) 2022-01-28
JP7550757B2 (ja) 2024-09-13
EP3895309A1 (en) 2021-10-20
WO2020120175A1 (en) 2020-06-18
US20210320642A1 (en) 2021-10-14
CN113169720B (zh) 2025-08-26
CN113169720A (zh) 2021-07-23
CN121012456A (zh) 2025-11-25
TW202110087A (zh) 2021-03-01
EP3895309B1 (en) 2025-09-03

Similar Documents

Publication Publication Date Title
DE60314715T2 (de) Piezoelektrischer resonierender Filter und Duplexer
DE10262056B4 (de) BAW-Resonator mit akustischem Reflektor und Filterschaltung
DE112008002199B4 (de) Verfahren zum Bilden einer Multilayer-Elektrode, welche unter einer piezoelektrischen Schicht liegt, und entsprechende Struktur
DE69413280T2 (de) Akustische Oberflächenwellenanordnung mit laminierter Struktur
DE102012210160B4 (de) Bulkakustikresonator, der eine nicht-piezoelektrische Schicht aufweist
DE2746712C3 (de) Piezoelektrischer Resonator
DE10207330B4 (de) Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet
DE10142157A1 (de) Schallwellenresonator und Verfahren zum Betreiben desselben, um die Resonanz beizubehalten, wenn dieser Temperaturänderungen ausgesetzt wird
DE60120052T2 (de) Dünnschicht, Verfahren zur Herstellung einer Dünnschicht und elektronische Komponente
DE102010061817A1 (de) Hybrider Akustikvolumenwellenresonator
DE60008569T2 (de) Akustischer Grenzflächenwellenfilter insbesondere für drahtlose Übertragungssysteme
DE102009022478A1 (de) Volumenakustikwellenvorrichtung und ein Verfahren zu ihrer Herstellung
DE102014107592A1 (de) Bulk-Akustik-Wave Resonator mit piezoelektrischer Schicht mit variierenden Mengen an Dotiermittel
DE102012219838A1 (de) Planarisierte Elektrode für verbesserte Performanz in Bulk-akustischen Resonatoren
DE69021918T2 (de) Akustische Oberflächenwellenanordnung.
EP1126602A2 (de) Piezoresonator
DE102017108483B4 (de) Akustisches Oberflächenwellen (SAW) Verbund-Gerät mit absorbierender Schicht zur Unterdrückung von störenden Antworten
WO2004109913A1 (de) Elektroakustisches bauelement und verfahren zur herstellung
DE10256937A1 (de) Mit akustischen Volumenwellen arbeitendes Bauelement mit unsymmetrisch/symmetrischer Beschaltung
EP1410503A2 (de) Piezoelektrische resonatorvorrichtung mit akustischem reflektor
DE3237358A1 (de) Element fuer elastische oberflaechenwellen
DE102018109833A1 (de) SAW-Resonator, HF-Filter, Multiplexer und Verfahren zur Herstellung eines SAW-Resonators
DE4121550C2 (de) Magnetoelastischer Oberflächenwellenleiter
DE102018109346A1 (de) Elektroakustischer Resonator, HF-Filter mit vergrößerter benutzbarer Bandbreite und Verfahren zur Herstellung eines elektroakustischen Resonators
DE102006020992A1 (de) Piezoelektrischer Dünnfilmresonator und Filter

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R082 Change of representative

Representative=s name: BARDEHLE PAGENBERG PARTNERSCHAFT MBB PATENTANW, DE

R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: RF360 SINGAPORE PTE. LTD., SG

Free format text: FORMER OWNER: RF360 EUROPE GMBH, 81671 MUENCHEN, DE

R016 Response to examination communication