JP7533793B2 - 窒化物半導体基板及びその製造方法 - Google Patents
窒化物半導体基板及びその製造方法 Download PDFInfo
- Publication number
- JP7533793B2 JP7533793B2 JP2023532640A JP2023532640A JP7533793B2 JP 7533793 B2 JP7533793 B2 JP 7533793B2 JP 2023532640 A JP2023532640 A JP 2023532640A JP 2023532640 A JP2023532640 A JP 2023532640A JP 7533793 B2 JP7533793 B2 JP 7533793B2
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- Prior art keywords
- layer
- substrate
- single crystal
- crystal silicon
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 257
- 239000004065 semiconductor Substances 0.000 title claims description 104
- 150000004767 nitrides Chemical class 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000010410 layer Substances 0.000 claims description 306
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 148
- 239000012790 adhesive layer Substances 0.000 claims description 87
- 239000010409 thin film Substances 0.000 claims description 62
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 57
- 229910052799 carbon Inorganic materials 0.000 claims description 57
- 239000002131 composite material Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 43
- 239000000919 ceramic Substances 0.000 claims description 42
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- -1 Si 3 N 4 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169808 | 2021-10-15 | ||
| JP2021169808 | 2021-10-15 | ||
| PCT/JP2022/035314 WO2023063046A1 (ja) | 2021-10-15 | 2022-09-22 | 窒化物半導体基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063046A1 JPWO2023063046A1 (enrdf_load_stackoverflow) | 2023-04-20 |
| JPWO2023063046A5 JPWO2023063046A5 (enrdf_load_stackoverflow) | 2023-09-21 |
| JP7533793B2 true JP7533793B2 (ja) | 2024-08-14 |
Family
ID=85987682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023532640A Active JP7533793B2 (ja) | 2021-10-15 | 2022-09-22 | 窒化物半導体基板及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7533793B2 (enrdf_load_stackoverflow) |
| TW (1) | TW202336831A (enrdf_load_stackoverflow) |
| WO (1) | WO2023063046A1 (enrdf_load_stackoverflow) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203666A (ja) | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006196713A (ja) | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2012151401A (ja) | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2013080776A (ja) | 2011-10-03 | 2013-05-02 | Covalent Materials Corp | 窒化物半導体基板 |
| JP2014229872A (ja) | 2013-05-27 | 2014-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
| JP2019523994A (ja) | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
| WO2022181163A1 (ja) | 2021-02-26 | 2022-09-01 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831419B2 (ja) * | 1990-12-25 | 1996-03-27 | 名古屋大学長 | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
-
2022
- 2022-09-22 WO PCT/JP2022/035314 patent/WO2023063046A1/ja active Application Filing
- 2022-09-22 JP JP2023532640A patent/JP7533793B2/ja active Active
- 2022-09-26 TW TW111136276A patent/TW202336831A/zh unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203666A (ja) | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006196713A (ja) | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2012151401A (ja) | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2013080776A (ja) | 2011-10-03 | 2013-05-02 | Covalent Materials Corp | 窒化物半導体基板 |
| JP2014229872A (ja) | 2013-05-27 | 2014-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
| JP2019523994A (ja) | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
| WO2022181163A1 (ja) | 2021-02-26 | 2022-09-01 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023063046A1 (enrdf_load_stackoverflow) | 2023-04-20 |
| TW202336831A (zh) | 2023-09-16 |
| WO2023063046A1 (ja) | 2023-04-20 |
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