JP7510810B2 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP7510810B2
JP7510810B2 JP2020123907A JP2020123907A JP7510810B2 JP 7510810 B2 JP7510810 B2 JP 7510810B2 JP 2020123907 A JP2020123907 A JP 2020123907A JP 2020123907 A JP2020123907 A JP 2020123907A JP 7510810 B2 JP7510810 B2 JP 7510810B2
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Japan
Prior art keywords
metal layer
substrate
semiconductor light
flange
layer
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JP2020123907A
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English (en)
Japanese (ja)
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JP2022020424A5 (https=
JP2022020424A (ja
Inventor
稔 田中
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2020123907A priority Critical patent/JP7510810B2/ja
Priority to US17/376,317 priority patent/US20220020905A1/en
Publication of JP2022020424A publication Critical patent/JP2022020424A/ja
Publication of JP2022020424A5 publication Critical patent/JP2022020424A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
JP2020123907A 2020-07-20 2020-07-20 半導体発光装置 Active JP7510810B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020123907A JP7510810B2 (ja) 2020-07-20 2020-07-20 半導体発光装置
US17/376,317 US20220020905A1 (en) 2020-07-20 2021-07-15 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020123907A JP7510810B2 (ja) 2020-07-20 2020-07-20 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2022020424A JP2022020424A (ja) 2022-02-01
JP2022020424A5 JP2022020424A5 (https=) 2023-06-23
JP7510810B2 true JP7510810B2 (ja) 2024-07-04

Family

ID=79292868

Family Applications (1)

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JP2020123907A Active JP7510810B2 (ja) 2020-07-20 2020-07-20 半導体発光装置

Country Status (2)

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US (1) US20220020905A1 (https=)
JP (1) JP7510810B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7828245B2 (ja) * 2022-06-23 2026-03-11 スタンレー電気株式会社 半導体発光装置
DE102023104440A1 (de) * 2023-02-23 2024-08-29 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074273A (ja) 2011-09-29 2013-04-22 Ccs Inc Ｌｅｄ発光装置
JP2018037582A (ja) 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
JP2018137428A (ja) 2017-02-20 2018-08-30 京セラ株式会社 紫外線発光装置用部材および紫外線発光装置
JP2020047817A (ja) 2018-09-20 2020-03-26 信越化学工業株式会社 光学素子パッケージ用リッド、光学素子パッケージ及びそれらの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881980B1 (en) * 2004-06-17 2005-04-19 Chunghwa Picture Tubes, Ltd. Package structure of light emitting diode
JP4229075B2 (ja) * 2005-03-07 2009-02-25 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置及び電子機器
FR2892594B1 (fr) * 2005-10-21 2007-12-07 Saint Gobain Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications
JP4941653B2 (ja) * 2007-02-27 2012-05-30 セイコーインスツル株式会社 電気化学素子の製造方法
US20100237378A1 (en) * 2009-03-19 2010-09-23 Tzu-Han Lin Light emitting diode package structure and fabrication thereof
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ｌｅｄランプ及びその製造方法
KR101954944B1 (ko) * 2012-06-26 2019-03-11 삼성디스플레이 주식회사 디스플레이 장치를 포함하는 전자 신분증 및 전자 신분증의 위변조 확인 방법
DE112017007356T5 (de) * 2017-03-29 2019-12-12 Mitsubishi Electric Corporation Hohle versiegelte Vorrichtung und Herstellungsverfahren dafür
CN108550677B (zh) * 2018-04-03 2024-10-01 林上煜 一种紫外led封装器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074273A (ja) 2011-09-29 2013-04-22 Ccs Inc Ｌｅｄ発光装置
JP2018037582A (ja) 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
JP2018137428A (ja) 2017-02-20 2018-08-30 京セラ株式会社 紫外線発光装置用部材および紫外線発光装置
JP2020047817A (ja) 2018-09-20 2020-03-26 信越化学工業株式会社 光学素子パッケージ用リッド、光学素子パッケージ及びそれらの製造方法

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JP2022020424A (ja) 2022-02-01

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