JP7508370B2 - 半導体装置、半導体ウェハ、及び電子機器 - Google Patents

半導体装置、半導体ウェハ、及び電子機器 Download PDF

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Publication number
JP7508370B2
JP7508370B2 JP2020552175A JP2020552175A JP7508370B2 JP 7508370 B2 JP7508370 B2 JP 7508370B2 JP 2020552175 A JP2020552175 A JP 2020552175A JP 2020552175 A JP2020552175 A JP 2020552175A JP 7508370 B2 JP7508370 B2 JP 7508370B2
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Prior art keywords
oxide
transistor
conductor
insulator
circuit
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Japanese (ja)
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JPWO2020079572A5 (https=
JPWO2020079572A1 (ja
Inventor
絵莉 佐藤
達也 大貫
裕人 八窪
寛司 國武
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2025165323A priority patent/JP2025185023A/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
    • H03G11/02—Limiting amplitude; Limiting rate of change of amplitude by means of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Memories (AREA)
JP2020552175A 2018-10-18 2019-10-15 半導体装置、半導体ウェハ、及び電子機器 Active JP7508370B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024098762A JP7753458B2 (ja) 2018-10-18 2024-06-19 半導体装置
JP2025165323A JP2025185023A (ja) 2018-10-18 2025-10-01 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018196390 2018-10-18
JP2018196390 2018-10-18
JP2019011578 2019-01-25
JP2019011578 2019-01-25
PCT/IB2019/058754 WO2020079572A1 (ja) 2018-10-18 2019-10-15 半導体装置、半導体ウェハ、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024098762A Division JP7753458B2 (ja) 2018-10-18 2024-06-19 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020079572A1 JPWO2020079572A1 (ja) 2021-12-23
JPWO2020079572A5 JPWO2020079572A5 (https=) 2022-08-02
JP7508370B2 true JP7508370B2 (ja) 2024-07-01

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JP2020552175A Active JP7508370B2 (ja) 2018-10-18 2019-10-15 半導体装置、半導体ウェハ、及び電子機器
JP2024098762A Active JP7753458B2 (ja) 2018-10-18 2024-06-19 半導体装置
JP2025165323A Pending JP2025185023A (ja) 2018-10-18 2025-10-01 半導体装置

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JP2024098762A Active JP7753458B2 (ja) 2018-10-18 2024-06-19 半導体装置
JP2025165323A Pending JP2025185023A (ja) 2018-10-18 2025-10-01 半導体装置

Country Status (6)

Country Link
US (2) US11935961B2 (https=)
JP (3) JP7508370B2 (https=)
KR (1) KR102898778B1 (https=)
CN (1) CN112888952A (https=)
TW (1) TWI835890B (https=)
WO (1) WO2020079572A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113939223A (zh) 2019-06-07 2022-01-14 株式会社半导体能源研究所 复合装置
EP4079469A4 (en) * 2019-12-16 2023-09-13 FingerVision Co., Ltd. GRIPPER, CONTROL METHOD AND PROGRAM
JP2025007857A (ja) * 2023-07-03 2025-01-17 株式会社アドバンテスト 微細流路デバイスおよび微粒子測定システム
US20250386566A1 (en) * 2024-06-17 2025-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Oxygen scavenging source/drain for integrated device

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JP2013255222A (ja) 2012-05-09 2013-12-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2016040888A (ja) 2014-08-13 2016-03-24 株式会社ソシオネクスト 半導体装置
US20170077883A1 (en) 2015-09-15 2017-03-16 Mediatek Inc. Self-regulated reference for switched capacitor circuit

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US20070273411A1 (en) 2004-05-13 2007-11-29 University Of Florida Amplifier with pulse coded output and remote signal reconstruction from the pulse output
JP2013040921A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 光検出装置
JP2013255222A (ja) 2012-05-09 2013-12-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2016040888A (ja) 2014-08-13 2016-03-24 株式会社ソシオネクスト 半導体装置
US20170077883A1 (en) 2015-09-15 2017-03-16 Mediatek Inc. Self-regulated reference for switched capacitor circuit

Also Published As

Publication number Publication date
US12408383B2 (en) 2025-09-02
KR102898778B1 (ko) 2025-12-10
US11935961B2 (en) 2024-03-19
JP7753458B2 (ja) 2025-10-14
TWI835890B (zh) 2024-03-21
CN112888952A (zh) 2021-06-01
US20240154040A1 (en) 2024-05-09
JP2025185023A (ja) 2025-12-18
JP2024125340A (ja) 2024-09-18
US20210384355A1 (en) 2021-12-09
WO2020079572A1 (ja) 2020-04-23
KR20210076105A (ko) 2021-06-23
TW202029456A (zh) 2020-08-01
JPWO2020079572A1 (ja) 2021-12-23

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